BFP520 - Siemens Semiconductors - Datasheet.Directory

BFP 520

Semiconductor Group Sep-09-19981

SIEGET45

NPN Silicon RF Transistor

Preliminary data

• For highest gain low noise amplifier

at 1.8 GHz and 2 mA / 2 V

Outstanding

G

a = 20 dB

Noise Figure

F

= 0.95 dB

• For oscillators up to 15 GHz

• Transition frequency

f

T = 45 GHz

• Gold metalization for high reliability

• SIEGET  45 - Line

Siemens Grounded Emitter Transistor

45 GHz

f

T - Line

VPS05605

4

2

1

3

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Ordering Code Pin Configuration Package

BFP 520 APs Q62702-F1794 1 = B 2 = E 3 = C 4 = E SOT-343

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage

V

CEO 2.5 V

Collector-base voltage

V

CBO 12 V

Emitter-base voltage

V

EBO 1 V

Collector current

I

C40 mA

Base current

I

B4mA

Total power dissipation,

T

S ≤ 105 °C

P

tot 100 mW

Junction temperature

T

j

150 °C

Ambient temperature

T

A-65 ...+150 °C

Storage temperature

T

st

g

-65 ...+150 °C

Thermal Resistance

Junction - soldering point 1)

R

thJS ≤ 450 K/W

1) TS is measured on the collector lead at the soldering point to the pcb

Semiconductor Group 1 1998-11-01

BFP 520

Semiconductor Group Sep-09-19982

Electrical Characteristics at

T

A = 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

DC characteristics

Collector-emitter breakdown voltage

I

C = 1 mA,

I

B = 0

V

(BR)CEO 2.5 3 3.5 V

Collector-base cutoff current

V

CB = 5 V,

I

E = 0

I

CBO - - 200 nA

Emitter-base cutoff current

V

EB = 1.5 V,

I

C = 0

I

EBO - - 35 nA

DC current gain

I

C = 20 mA,

V

CE = 4 V

h

FE 50 80 150 -

AC characteristics - GHz- 45

f

T

Transition frequency

I

C = 30 mA,

V

CE = 2 V,

f

= 2 GHz - pF0.06-

C

cb

Collector-base capacitance

V

CB = 2 V,

f

= 1 MHz - pF

C

ce 0.3-

Collector-emitter capacitance

V

CE = 2 V,

f

= 1 MHz -

Emitter-base capacitance

V

EB = 0.5 V,

f

= 1 MHz pF

C

eb 0.35-

-

F

-

Noise figure

I

C = 2 mA,

V

CE = 2 V,

Z

S =

Z

Sopt ,

f

= 1.8 GHz

dB0.95

- dB23-

G

ms

Power gain 1)

I

C = 20 mA,

V

CE = 2 V,

Z

S =

Z

Sopt,

Z

L =

Z

Lopt ,

f

= 1.8 GHz - dB

|

S

21|2

Insertion power gain

I

C = 20 mA,

V

CE = 2 V,

f

= 1.8 GHz,

Z

S =

Z

L = 50Ω

21-

-

Third order intercept point at output

V

CE = 2 V,

f

= 1.8 GHz,

Z

S=

Z

Sopt,

Z

L=

Z

Lopt ,

I

C = 20 mA

I

C = 7 mA

dBm

IP

3

25

17

-

1dB compression point

V

CE = 2 V,

f

= 1.8 GHz,

Z

S=

Z

Sopt,

Z

L=

Z

Lopt ,

I

C = 20 mA

I

C = 7 mA

dBm

-

P

-1dB

-

12

5

1)

G

ms = |

S

21 /

S

12|2)

G

ma = |

S

21 /

S

12| (k-(k2-1)1/2)

Semiconductor Group 2 1998-11-01

BFP 520

Semiconductor Group Sep-09-19983

Common Emitter S-Parameters

f S

11

S

21

S

12

S

22

GHz MAG ANG MAG ANG MAG ANG MAG ANG

V

CE = 2 V, /C = 20 mA

0.01

0.1

0.5

1

2

3

4

5

6

0.7244

0.7251

0.6368

0.4768

0.2816

0.225

0.2552

0.3207

0.3675

-0.7

-8.4

-40.7

-73.6

-123.8

-166

156.2

133.6

118.7

32.273

31.637

27.293

19.6

11.02

7.48

5.636

4.488

3.683

178.6

171.4

140.7

113.5

84.9

67.6

53

39.7

27.5

0.0007

0.0041

0.0194

0.0351

0.00574

0.0788

0.0994

0.1177

0.1343

69.4

92.8

75.9

66.5

56.3

49.2

41.5

32.9

24.7

0.9052

0.9363

0.8523

0.6496

0.3818

0.2407

0.1544

0.095

0.0545

1.2

-4.4

-26.7

-46

-64.6

-73.6

-95.3

-128.9

177.6

Common Emitter Noise Parameters

f F

min 1)

G

a 1)

Γ

opt

R

N

r

n

F

50Ω 2) |

S

21|2 2)

GHz dB dB MAG ANG Ω- dB dB

V

CE = 2 V,

I

C = 2 mA

0.9

1.8

2.4

3

4

5

6

0.72

0.95

1.07

1.3

1.35

1.7

1.95

21.5

20

16

14.5

11.6

9.5

8

0.64

0.49

0.45

0.4

0.26

0.14

0.12

14

30

41

54

82

128

151

21.5

19

18

16.5

12.5

9

8

0.43

0.38

0.36

0.33

0.25

0.18

0.16

1.75

1.55

1.6

1.7

1.6

1.85

1.95

16.1

15.14

14.07

13.13

11.49

9.87

8.28

V

CE = 2 V,

I

C = 5 mA

0.9

1.8

2.4

3

4

5

6

0.89

1.08

1.12

1.32

1.35

1.6

1.8

22

20.5

18

16.2

13.5

11.5

10.5

0.49

0.38

0.34

0.29

0.156

0.08

0.07

12

22

33

45

71

120

150

16

14

13.5

11

10

8

0.32

0.28

0.27

0.22

0.2

0.16

1.5

1.38

1.4

1.5

1.45

1.65

1.8

21.94

19.34

17.54

16.01

13.82

11.93

10.23

1) Input matched for minimum noise figure, output for maximum gain 2)

Z

S =

Z

L = 50Ω

For more and detailed S- and Noise-parameters please contact your local Siemens

distributor or sales office to obtain a Siemens Application Notes CD-ROM or see Internet:

http://www.siemens.de/Semiconductor/products/35/35.htm

Semiconductor Group 3 1998-11-01

BFP 520

Semiconductor Group Sep-09-19984

SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :

Transistor Chip Data

IS = tbd aA

VAF = tbd V

NE = tbd -

VAR = tbd V

NC = tbd -

RBM = tbd Ω

CJE = tbd fF

TF = tbd ps

ITF = tbd mA

VJC = tbd V

TR = tbd ns

MJS = tbd -

XTI = tbd -

BF = tbd -

IKF = tbd A

BR = tbd -

IKR = tbd A

RB = tbd Ω

RE = tbd Ω

VJE = tbd V

XTF = tbd -

PTF = tbd deg

MJC = tbd -

CJS = tbd fF

XTB = tbd -

FC = tbd -

NF = tbd -

ISE = tbd fA

NR = tbd -

ISC = tbd fA

IRB = tbd mA

RC = tbd Ω

MJE = tbd -

VTF = tbd V

CJC = tbd fF

XCJC = tbd -

VJS = tbd V

EG = tbd eV

TNOM tbd K

C’-E’-Diode Data (Berkley-SPICE 2G.6 Syntax) :

IS = tbd fA RS = tbd Ω

N = tbd -

All parameters are ready to use, no scalling is necessary

Package Equivalent Circuit:

L

BI = 0.47 nH

L

BO = 0.53 nH

L

EI = 0.23 nH

L

EO = 0.05 nH

L

CI = 0.56 nH

L

CO = 0.58 nH

C

BE = 136 fF

C

CB = 6.9 fF

C

CE = 134 fF

EHA07389

L

BI

BE

C

BO

L

C

EI

L

EO

CB

C

CI

L

CO

L

CE

C

Transistor

C’-E’-

B

Diode

E

E’

C’B’

Chip

Valid up to 6GHz

The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit,

both leads are combined in one electrical connection.

Extracted on behalf of SIEMENS Small Signal Semiconductors by:

Institut für Mobil-und Satellitentechnik (IMST)

 1996 SIEMENS AG

For examples and ready to use parameters please contact your local Siemens distributor or sales office to

obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm

Semiconductor Group 4 1998-11-01

BFP 520

Semiconductor Group Sep-09-19985

For non-linear simulation:

• Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.

• If you need simulation of thereverse characteristics, add the diode with the

C’-E’- diode data between collector and emitter.

• Simulation of package is not necessary for frequenties < 100MHz.

For higher frequencies add the wiring of package equivalent circuit around the

non-linear transistor and diode model.

Note:

• This transistor is constructed in a common emitter configuration. This feature causes

an additional reverse biased diode between emitter and collector, which does not

effect normal operation.

EHA07307

C

EE

B

Transistor Schematic Diagram

The common emitter configuration shows the following advantages:

• Higher gain because of lower emitter inductance.

• Power is dissipated via the grounded emitter leads, because the chip is mounted

on copper emitter leadframe.

Please note, that the broadest lead is the emitter lead.

The AC characteristics are verified by random sampling.

Semiconductor Group 5 1998-11-01

BFP 520

Semiconductor Group Sep-09-19986

Total power dissipation

P

tot =

f

(

T

A*,

T

S)

* Package mounted on epoxy

0 20 40 60 80 100 120 °C 150

T

A

,T

S

0

10

20

30

40

50

60

70

80

90

100

mW

120

P

tot

T

S

T

A

Transition frequency

f

T =

f

(

I

C)

f

= 2 GHz

V

CE = parameter in V

0 5 10 15 20 25 30 35 mA 45

I

C

0

4

8

12

16

20

24

28

32

36

40

44

GHz

52

f

T

2

1

0.75

0.5

Permissible Pulse Load

P

totmax/

P

totDC =

f

(

t

p)

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

t

p

0

10

1

10

-

P

max

/ P

DC

D = 0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

Permissible Pulse Load

R

thJS =

f

(

t

p)

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

t

p

2

10

3

10

K/W

R

thJS

0.5

0.2

0.1

0.05

0.02

0.01

0.005

D = 0

Semiconductor Group 6 1998-11-01

BFP 520

Semiconductor Group Sep-09-19987

Power gain

G

ma,

G

ms, |

S

21|2 =

f

(

f

)

V

CE = 2V, IC = 20 mA

0.0 1.0 2.0 3.0 4.0 GHz 6.0

f

0

4

8

12

16

20

24

28

32

36

dB

44

G

ms

G

ma

|

S

21|2

Power gain

G

ma,

G

ms =

f

(

I

C)

V

CE = 2V

f

= parameter in GHz

0 5 10 15 20 25 30 35 mA 45

I

C

0

4

8

12

16

20

24

dB

32

G

0.9

1.8

2.4

3

4

5

6

Power gain

G

ma,

G

ms =

f

(

V

CE)

I

C = 20 mA

f

= parameter in GHz

0.0 0.5 1.0 1.5 2.0 V3.0

V

CE

0

4

8

12

16

20

24

dB

32

G

0.9

1.8

2.4

3

4

5

6

Collector-base capacitance

C

cb =

f

(

V

CB)

V

BE = 0,

f

= 1MHz

0.0 0.5 1.0 1.5 2.0 V3.0

V

CB

0.00

0.05

0.10

0.15

0.20

0.25

pF

0.35

C

cb

Semiconductor Group 7 1998-11-01

BFP 520

Semiconductor Group Sep-09-19988

Noise figure

F

=

f

(

I

C)

V

CE = 2 V,

f

= 1.8 GHz

0 5 10 15 20 25 30 mA 40

I

C

0.0

0.5

1.0

1.5

2.0

dB

3.0

F

Zs = 50Ohm

Zs = Zsopt

Noise figure

F

=

f

(

I

C)

V

CE = 2 V,

Z

S =

Z

Sopt

0 5 10 15 20 25 30 mA 40

I

C

0.0

0.5

1.0

1.5

2.0

dB

3.0

F

f = 6 GHz

f = 5 GHz

f = 4 GHz

f = 3 GHz

f = 2.4 GHz

f = 1.8 GHz

f = 0.9 GHz

Noise figure

F

=

f

(

f

)

V

CE = 2 V,

Z

S =

Z

Sopt

0.0 1.0 2.0 3.0 4.0 5.0 GHz 6.5

f

0.0

0.5

1.0

1.5

2.0

dB

3.0

F

IC = 5 mA

IC = 2 mA

Source impedance for min.

Noise Figuren vers. Frequency

V

CE = 2 V,

I

C = 2 mA / 5 mA

100

+j10

-j10

50

+j25

-j25

25

+j50

-j50

10

+j100

-j100

0

3GHz

4GHz

5GHz

6GHz

0.45GHz

0.9GHz

1.8GHz

2mA

5mA

Semiconductor Group 8 1998-11-01