BFR182T
Aug-09-20011
NPN Silicon RF Transistor
Preliminary data
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
fT = 8 GHz
F = 1.2 dB at 900 MHz
VPS05996
1
2
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR182T RGs 1 = B 2 = E 3 = C SC75
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 12 V
Collector-emitter voltage VCES 20
Collector-base voltage VCBO 20
Emitter-base voltage VEBO 2
Collector current IC35 mA
Base current IB4
Total power dissipation
TS
75°C 1) Ptot 250 mW
Junction temperature Tj150 °C
Ambient temperature TA-65 ... 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point2) RthJS
300 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
BFR182T
Aug-09-20012
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 12 - - V
Collector-emitter cutoff current
VCE = 20 V, VBE = 0 ICES - - 100 µA
Collector-base cutoff current
VCB = 10 V, IE = 0 ICBO - - 100 nA
Emitter-base cutoff current
VEB = 1 V, IC = 0 IEBO - - 1 µA
DC current gain
IC = 10 mA, VCE = 8 V hFE 50 100 200 -
BFR182T
Aug-09-20013
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC characteristics (verified by random sampling)
Transition frequency
IC = 15 mA, VCE = 8 V, f = 500 MHz fT6 8 - GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz Ccb - 0.33 0.5 pF
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz Cce - 0.18 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz Ceb - 0.6 -
Noise figure
IC = 3 mA, VCE = 8 V, ZS = ZSopt ,
f = 900 MHz
f = 1.8 GHz
F
-
-
1.2
1.9
-
-
dB
Power gain, maximum stable 1)
IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
Gms - 20 -
Power gain, maximum available 2)
IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 1.8 GHz
Gma - 13 -
Transducer gain
IC = 10 mA, VCE = 8 V, ZS = ZL = 50
,
f = 900 MHz
f = 1.8 GHz
|S21e|2
-
-
16
10
-
-
1Gms = |S21 / S12|
2Gma = |S21 / S12| (k-(k2-1)1/2)
BFR182T
Aug-09-20014
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS = 4.8499 fA
VAF = 21.742 V
NE = 0.91624 -
VAR = 2.2595 V
NC = 0.5641 -
RBM = 2.8263
CJE = 8.8619 fF
TF = 22.72 ps
ITF = 6.5523 mA
VJC = 1.0132 V
TR = 1.7541 ns
MJS = 0-
XTI = 3 -
BF = 84.113 -
IKF = 0.14414 A
BR = 10.004 -
IKR = 0.039478 A
RB = 3.4217
RE = 2.1858
VJE = 1.0378 V
XTF = 0.43147 -
PTF = 0 deg
MJC = 0.31068 -
CJS = 0fF
XTB = 0-
FC = 0.64175 -
NF = 0.56639 -
ISE = 8.4254 fA
NR = 0.54818 -
ISC = 5.9438 fA
IRB = 0.071955 mA
RC = 1.8159
MJE = 0.40796 -
VTF = 0.34608 V
CJC = 490.25 fF
XCJC = 0.19281 -
VJS = 0.75 V
EG = 1.11 eV
TNOM 300 K
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
L1 = 0.762 nH
L2 = 0.706 nH
L3 = 0.382 nH
C162 fF
C284 fF
C3180 fF
C4 = 7
C5 = 40 fF
C6 = 48 fF
EHA07524
Transistor C’ L
E’
B’
3
4
C
C
Chip
E
L
1
5
C
B
2
L
C
6
C
1
C
2
C
3
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales
office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
BFR182T
Aug-09-20015
Total power dissipation Ptot = f (TS)
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
mW
300
P
tot
Permissible Pulse Load RthJS = f (tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
1
10
2
10
3
10
R
thJS
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
Permissible Pulse Load
Ptotmax/PtotDC = f (tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
P
totmax
/ P
totDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
BFR182T
Aug-09-20016
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0 5 10 15 V25
VCB
0
0.1
0.2
0.3
0.4
pF
0.6
C
cb
Transition frequency fT = f (IC)
VCE = Parameter
0 5 10 15 20 mA 30
IC
0
1
2
3
4
5
6
7
GHz
9
f
T
10V
8V
5V
3V
2V
1V
0.7V
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
VCE = Parameter
0 4 8 12 16 20 24 mA 32
IC
7
10
13
16
dB
22
G
10V
5V
3V
2V
1V
Power Gain Gma, Gms = f(IC)
f = 1.8GHz
VCE = Parameter
0 4 8 12 16 20 24 mA 32
IC
0
3
6
9
dB
15
G
ma
10V
5V
3V
2V
1V
BFR182T
Aug-09-20017
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50
)
VCE = Parameter, f = 900MHz
0 5 10 15 20 mA 30
IC
0
5
10
15
20
dBm
30
IP
3
8V
5V
3V
2V
1V
Power Gain Gma, Gms = f(VCE):_____
|S21|2 = f(VCE):---------
f = Parameter
0 3 6 V12
VCE
0
2
4
6
8
10
12
14
16
18
dB
22
G
0.9GHz
1.8GHz
0.9GHz
1.8GHz
IC=10mA
Power Gain |S21|2= f(f)
VCE = Parameter
012345GHz 7
f
-5
0
5
10
15
20
dBm
30
S
21
10V
5V
1V
IC=10mA
Power Gain Gma, Gms = f(f)
VCE = Parameter
012345GHz 7
f
0
5
10
15
20
25
30
35
dB
45
G
IC=10mA
10V
5V
1V