On-State Current
4 Amp
FT04...D
SURFACE MOUNT TRIAC
This series of TRIACs uses a high performance
PNPN technology.
These devices are intended for AC control
applications using surface mount technology.
The high commutation performances combined with
high sensitivity, make them perfect in all applications
like solid state relays, home appliances, power tools,
small motor drives...
Jan - 02
Absolute Maximum Ratings, according to IEC publication No. 134
RMS On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Critical rate of rise of on-state current
Operating Temperature
Storage Temperature
Lead Temperature for Soldering
I
T(RMS)
PARAMETER CONDITIONS Min. Max. Unit
DPAK
(Plastic)
Gate Trigger Current
< 5 mA to < 50 mA
Off-State Voltage
200 V ÷ 600 V
SYMBOL
I
TSM
I
TSM
I
2
t
I
GM
P
GM
P
G(AV)
T
j
T
stg
T
L
All Conduction Angle, T
C
= 110 ºC
Half Cycle, 60 Hz
Half Cycle, 50 Hz
t = 10 ms, Half Cycle
20 µs max.
20 µs max.
20 ms max.
I
G
= 50 mA, di
G
/dt = 0.1 A/µs
Repetitive f = 50 Hz
I
G
= 50 mA, di
G
/dt = 0.1 A/µs
Non Repetitive
4.5 mm from case, 10s max.
4
35
30
4.5
10
50
-40
-40
A
A
A
A
2
s
A
W
W
A/µs
A/µs
ºC
ºC
ºC
4
10
1
+125
+150
260
Repetitive Peak Off State
Voltage
PARAMETER VOLTAGE UnitSYMBOL
V
DRM
V
RRM
B
200 V
M
600
di/dt
MT1 MT2
G
MT2
D
400
FT04...D
SURFACE MOUNT TRIAC
Jan - 02
Electrical Characteristics
Gate Trigger Current
Off-State Leakage Current
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
PARAMETER CONDITIONS SENSITIVITY Unit
SYMBOL
I
GT
I
DRM
V
D
= 12 V
DC
, R
L
= 33Ω, T
j
= 25 ºC mA
07
5
7
mA
µA
V
V
V
mA
mA
V/µs
A/ms
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MAX
MAX
MAX
MIN
MIN
MIN
TYP
/I
RRM
V
TM
*
V
GT
V
GD
I
H
*
I
L
dv / dt*
t
gd
R
th(j-c)
Gate Controlled
Delay Time
Thermal Resistance
Junction-Case
V
D
= V
DRM
, T
j
= 125 ºC
T
j
= 25 ºC
V
R
= V
RRM
,
I
T
= 5.5 Amp, tp = 380 µs, T
j
= 25 ºC
V
D
= 12 V
DC
, R
L
= 33Ω, T
j
= 25 ºC
I
T
= 100 mA
,
Gate open,
T
j
= 25 ºC
I
G
= 1.2 I
GT
,
T
j
= 25 ºC
V
D
= 0.67 x V
DRM
, Gate open
T
j
= 125 ºC
(dv/dt)c = 0.1 V/µs, T
j
= 125 ºC
(dv/dt)c = 20 V/µs, Tj = 125 ºC
PART NUMBER INFORMATION
Quadrant
Q1÷Q3
Q4
Q1÷Q3
Q1÷Q3
Q1, Q3
Q2
Q1÷Q3
V
D
= V
DRM
, R
L
= 3.3KΩ, T
j
= 125 ºC
(di/dt)c*
µs
ºC/W
* for either polarity of electrode MT2 voltage with reference to electrode MT1.
I
G
= 500 mA, V
D
= V
DRM
di
G
/dt = 3 A/µs, I
TM
= 5.5 A
08
10
11
25
2
10
1.75
1.3
0.2
10
10
15
20
1.8
15
20
30
100
2.7
1.8
25
25
50
200
4.4
2.7
2
3.5
2.6
for DC
for AC 360º conduction angle (f=50 Hz)
16
50
mA
50
80
80
250
4.4
2.7
FAGOR
SCR
CURRENT
CASE
VOLTAGE
SENSITIVITY
F T 04 11 B D 00
FORMING
TR
PACKAGING
6.0
5.0
4.0
3.0
2.0
1.0
0.0
Jan - 02
Fig. 1: Maximum power dissipation versus
RMS on-state current
0 20 40 60 80 100
P (W)
Fig. 2: Correlation between maximum power dissipation
and maximum allowable temperatures (Tamb and Tcase)
for different thermal resistances heatsink + contact.
T case (ºC)
-95
-100
-105
-110
Fig. 3: RMS on-state current versus ambient
temperature
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature
(typical values).
IGT, IH (Tj) / IGT, IH (Tj = 25 ºC)
1 10 100 1000
Fig. 6: Non repetitive surge peak on-state
current versus number of cycles.
30
25
20
15
10
5
0
I TSM (A)
1.00
K = [(Zth(j-c) / Rth (j-c)]
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration.
1E-3 1E-2 1E-1 1E+0
FT04...D
SURFACE MOUNT TRIAC
I T(RMS) (A)
0.0 1.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
2.0 3.0 4.0
P (W)
Tamb (ºC)
Tj (ºC) Number of cycles
tp (s)
Tamb (ºC)
IT(RMS)(A)
0.5 1.5 2.5 3.5
α
180 º
α
α = 180 º
α = 120 º
α = 90 º
α = 60 º
α = 30 º
10 30 50 70 90 110
α = 180 º
Rth=0 ºC/W
Rth=5 ºC/W
Rth=10 ºC/W
Rth=15 ºC/W
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 20 40 60 80 10010 30 50 70 90 110
α = 180 º
Rth(j-a) = Rth(j-c)
Rth(j-a) = 55 ºC/W
S(Cu) = 1.75 cm2
-40 0
2.5
2.0
1.5
1.0
0.5
0.0
40 80 120-20 20 60 100
IH
IGT
Tj initial = 25 ºC
F = 50 Hz
0.50
0.20
0.10
Jan - 02
FT04...D
SURFACE MOUNT TRIAC
100
10
1
1 10
ITSM(A). I2t (A2s)
Fig. 7: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp ≤ 10 ms, and corresponding value of I2t.
tp(ms)
2 5
Tj initial = 25 ºC
I2 t
ITSM
Fig. 9: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 µm).
Rth(j-a) (ºC/W)
S(Cu) (cm
2
)
0
100
80
60
40
20
0
2 4 6 8 10 12 14 16 18 20
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Fig. 8: On-state characteristics (maximum
values).
ITM(A)
4.0
30.0
VTM(V)
4.5
10.0
1.0
0.1
5.0
Tj max
Vto = 0.95 V
Rd = 0.140mΩ
Tj = Tj max.
Tj = 25 ºC
Jan - 02
FT04...D
SURFACE MOUNT TRIAC
PACKAGE MECHANICAL DATA
DPAK TO 252-AA
A
A1
b
c
c1
c2
D
D1
E
E1
e
H
L
L1
L2
L3
L4
REF.
DIMENSIONS
Milimeters
Min. Nominal Max.
2.18
0
0.64
0.46
0.46
5.97
5.21
6.35
5.20
9.40
1.40
2.55
0.46
0.89
0.64
2.3±0.18
0.12
0.75±0.1
0.8±0.013
6.1±0.1
6.58±0.14
5.36±0.1
2.28BSC
9.90±0.15
2.6±0.05
0.5±0.013
1.20±0.05
0.83±0.1
2.39
0.127
0.89
0.61
0.56
6.22
5.52
6.73
5.46
10.41
1.78
2.74
0.58
1.27
1.02
Marking: type number
Weight: 0.2 g
FOOT PRINT
8º±2º
E
L3
D
be
4.57 Typ.
ø1x0.15
H
1.6
L4
A
c2
8º±2º
8º±2º
8º±2º 8º±2º
L
L2
A1
1.067±0.013
E1
D1
6.7
6.7
3
1.6
2.32.3
1.6
