(AI eackano Hermetic Schottky Diodes for Mixers and Detectors (1-18 GHz) Technical Data Features Low Parasitic Hermetic Package High Frequency Performance Meets Performance Standards of Space Level Testing Lead Forming Option No Board Drilling Required Rugged Construction MIL-STD-750 Compliance High Uniformity Tightly Controlled Process Insures Consistent Performance Silicon Nitride Passiva- tion, Tri-Metallization Stable High Temperature Performance Description These Schottky barrier diodes are fabricated by advanced epitaxial techniques. Precise process control insures uniform- ity and repeatability of this planar beam lead microwave semiconductor. A nitride passi- vation layer provides immunity from contaminants which could otherwise lead to Ip drift. These diodes are packaged in the hermetic J package. Ad- vanced design and assembly 4 ony HSCH-6000 Series 0.13 (0.005) 0.38 (0.018) .07 (0.003) 197 0.042) 0.30 (0.012) 0.76 (0.030) rT] 1.96 (0.077) 1.60 (0.063) FF L_] ocTAGON 3.56 (0.140) t tb 3.17 (0.125) ALL LEADS Oe 0.48 (0.019) 0.33 (0.043) Cp = 0.07 pF Outline J-2 0.13 (0.005) 45 0.07 0 aa - Soy 1.07 (0.042) le 76 (0.030) asslorm Cl -sagioars 3.17 (0.125) ALL LEADS a6 bs (0.077) 1.60 (0.063) orracon 038 cow 41 je 9.88 oon DL 0.30 (0.012) 0.33 (0.073) Coping = 0.06 PF Cray, = 0.08 pF Outline J-3 0.13 (0.005) as 0.07 (0.003) l tate ioosal eo ; asst O jaioarn 3.17 (0.725) ALL LEADS 1.96 (0.077) CQ 1.60 (0.063) OCTAGON 0.38 (0.015) Q 0.48 (0. 0.30 (0.012) 0.33 Cepia = 0.06 pF r 0.33 (0. 5013) Crap) = 0.07 pF Outline J-4 DIMENSIONS IN MILLIMETERS AND (INCHES) 3-50 processes minimize package parasitics resulting in optimum performance. The body of the package is alumina, while the leads are gold-plated over nickel-plated Kovar. The solder glass seal and rugged construction meet the stringent requirements of space- level testing and are capable of meeting the environmental tests of MIL-STD-750. Applications These hermetic devices are designed for stripline and Microstrip use. The design features extremely low package parasitics. The package outline also maximizes lead strength while reducing overall body size. This design is especially useful in environments requiring high frequency and/or wide band operation. The single diode can be used in either mixer or detector applications. The pairs can be Maximum Ratings used in balanced mixers and can be configured to assemble bridge, star, and ring quads for Class I, I, or III type double balanced mixers. The quads are used as double balanced mixers, phase detectors, and AM and digital modulators. Pulse Power Incident at Toasp = 25C (1 us pulse, DC = 0.001) CW Power Dissipation at Toasp = 25C Derate Linearly to Zero at 175C Operating Temperature Range .... Storage Temperature Range Soldering Temperature 150 mW/junction 65C to +175C sesevensessees -65C to +200C seecanteaseneceeeees 290C Max. for 10 sec. These diodes are ESD sensitive. Handle with care to avoid static discharge through the diode. Electrical Specifications at Togs = 25C Single Diode in J-2 Package Maximum Ir Minimum | Maximum | Maximum | Maximum Part Noise Impedance Breakdown | Dynamic Forward Total Number Figure Zp (Q) Maximum| Voltage Resistance Voltage | Capacitance HSCH- | Barrier | NF (dB) | Min. Max. SWR Var () Ry (Q) Vp (nF) Cy (PF) 6310 Medium 7.2 at 200 400 1.6:1 4 16 500 0.22 16 GHz 6312 6.2 at 12 0.27 9.375 GHz 6330 Low 7.2 at 150 350 16 375 0.22 16 GHz 6332 6.2 at 12 0.27 9.375 GHz Test DC Load Resistance = 0Q Ips 10 pA Ip=5mA Ip=1mA Vp =0V Conditions L.O. Power = 1 mW f= 1MHz Ip = 30 MHz, 1.5 dB NF 3-51 Diode Pairs in J-3 Package Max. IF Min. Max. Max. Total Max. Part Noise Impedance Breakdown| Dynamic |Max.| Capaci- | Max. |Forward| Max. Number Figure Zap (Q) Max.| Voltage |Resistance| ARp tance AC, | Voltage | AV, HSCH.- | Barrier | NF (dB) | Min. Max.| SWR| Var (V) Ry (0) (Q) Cr (pF) | (PF) | Vy Gm) | (mv) 6510 |Medium] 7.2at | 200 400 | 16:1 4 16 3 022 |o0z/ 600 | 10 16 GHz 6512 6.2 at 12 0.27 9.375 GHz 6530 Low 72 at 150 350 16 0.22 376 16 GHz 6532 6.2 at 12 0.27 9.375 GHz Test DC Load Resistance = 0 Q Ips10 pA Iy=5mA Vg =0V Ip=1lmA Conditions L.O. Power = 1 mW f= 1 MHz Tp = 30 MHz, 1.5 dB NF Measured between adjacent leads. Diode Quads in J-4 Package Maximum Maximum Measured Maximum | Maximum | Maximum | Maximum Fre- Part Capaci- Capacitance | Dynamic | Resistance | Forward Ve quency | Number tance Difference | Resistance | Difference Voltage Difference Band | HSCH- | Barrier Cu (pF) ACy (pF) Ry (Q) ARp (Q) Vy (mF) AVp (mV) Ku 6810 Medium 0.22 0.03 20 3 600 15 18 GHz 6830 Low 375 x 6812 Medium 0.27 16 2 500 12 GHz 6832 Low 376 Test Conditions Vp=0V Ip=5mA Ip=1mA f =1MHz Measured between adjacent leads. 3-52 Typical Parameters 100 E 100 z i VY, < i o ? 0 1, tok SLY z & 2 fF & E sar = n 125C 5 3 4 2 1.0 E / Q 1.0 FE ft a = - c = L 55C Z 5 - faesec ou wu | 0.1 1 01k = 55C - OF / / / [ 0.01 0.01 A WA 0.4 0.6 0.8 0 0.2 0.4 0.6 08 1.0 0.0 9 Ve FORWARD VOLTAGE (V) Ve FORWARD VOLTAGE (V) Figure 1. Typical Forward Characteristics for Medium Figure 2. Typical Forward Characteristics for Low Barrier Diodes. Barrier Diodes. 75 7.0 C;= 0.1 pF a = 65 Let w 6: cs Leben YY o C= 0.15 pb a a w 6.0 3 hn 2 55 5.0 12 #4 89.375 12 16 FREQUENCY (GHz) Figure 3. Typical Noise Figure vs. Frequency for J-Packages. 3-53 Typical Parameters (cont.) Figure 4. Typical Admittance Characteristics with 20 A External Bias. HSCH-6310, -6330. MODEL FOR J-2 PACKAGE SCHOTTKY DIODES AT 20 A EXTERNAL BIAS HSCH-6310, -6330 Figure 5. Typical Admittance Characteristics with 20 pA External Bias. HSCH-6312, -6332. MODEL FOR J-2 PACKAGE SCHOTTKY DIODES AT 20 pA EXTERNAL BIAS HSCH-6312, -6332 1.172 nH 0.058 nH | 0.922 nH 0.03 nH ft _t- a22 5.67 2 1276 2 r{_}- 0.0333 cm 0.0737 cm 0.0737 cm 0.117 pF 0.198 pF 0.15 pF 0.028 pF / I Special Order Information In the event that mounting these diodes _can be ordered directly. Please in the circuit requires leads formed as refer to the following table for shown below, this lead configuration order information. Straight Lead Order Information csr => Specify: Part Number (HSCH-6XXX) No Option Required }-0.01740.005 TYP. 7 Formed Lead Order Information aoree TYP. Specify: Part Number (HSCH-6XXX) / | i Option Number F01 o a All electrical tests are made prior to lead 0.0074 0.003 forming 0.2540.01 TYP. 3-54