STW11NB80 (R) N-CHANNEL 800V - 0.65 - 11A - T0-247 PowerMESH MOSFET TYPE STW11NB80 V DSS 800 V R DS(on) < 0.8 ID 11 A TYPICAL RDS(on) = 0.65 EXTREMELY HIGH dv/dt CAPABILITY 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O 3 2 DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. 1 TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM (*) P tot dv/dt( 1 ) Tstg Tj Value Unit Drain-source Voltage (V GS = 0) Parameter 800 V Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor 800 V 30 11 6.9 44 190 1.52 V A A A W W/ o C 4 -65 to 150 150 V/ns o C o C Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (*) Pulse width limited by safe operating area July 1999 ISD 11A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX 1/8 STW11NB80 THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max 0.66 o C/W 30 0.1 300 o C/W C/W o C Max Value Unit 11 A Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o AVALANCHE CHARACTERISTICS Symbol IAR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 50 V) 500 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A Gate-body Leakage Current (V DS = 0) Typ. Max. 800 V GS = 0 Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating o C Min. Unit V T c = 125 V GS = 30 V 1 50 A A 100 nA ON () Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = V GS I D = 250 A R DS(on) Static Drain-source On Resistance V GS = 10 V I D = 5.5 A I D(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V Min. Typ. Max. Unit 3 4 5 V 0.65 0.8 11 A DYNAMIC Symbol g fs () C iss C oss C rss 2/8 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D =5.5 A V GS = 0 Min. Typ. Max. Unit 10 S 2900 350 33 pF pF pF STW11NB80 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit t d(on) tr Turn-on Time Rise Time V DD = 400 V R G = 4.7 ID = 5 A VGS = 10 V 30 13 ns ns Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 640 V R G = 4.7 I D = 10 A V GS = 10 V VGS = 10 V 70 18 31 nC nC nC SWITCHING OFF ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 640 V ID = 10 A R G = 4.7 V GS = 10 V Typ. Max. Unit ns ns ns 26 23 37 SOURCE DRAIN DIODE Symbol ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Test Conditions Min. Typ. Source-drain Current Source-drain Current (pulsed) Forward On Voltage I SD = 11 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 10 A di/dt = 100 A/s V DD = 100 V T j = 150 o C V GS = 0 Max. Unit 11 44 A A 1.6 V 900 ns 9 C 20 A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/8 STW11NB80 Output Characteristics Transfer Characteristics ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STW11NB80 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Source-drain Diode Forward Characteristics 5/8 STW11NB80 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 4: Gate Charge test Circuit STW11NB80 TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.582 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 P025P 7/8 STW11NB80 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. 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