BPV10
Vishay Semiconductors
1 (5)
Rev. 3, 20-May-99 www.vishay.com
Document Number 81502
Silicon PIN Photodiode
Description
BPV10 is a very high speed and high sensitive PIN
photodiode in a standard T–1
¾
plastic package.
Due to its waterclear epoxy the device is sensitive to
visible and infrared radiation.
Features
D
Extra fast response times
D
High bandwidth B = 250 MHz at VR=12 V
D
High photo sensitivity
D
Radiant sensitive area A=0.78mm2
D
Standard T–1
¾
(ø 5 mm) package with clear lens
D
Angle of half sensitivity ϕ = ± 20
°
94 8390
Applications
Wide band detector for demodulation of fast signals, industrial electronics, measurement, control circuits and
fast interrupters
Absolute Maximum Ratings
Tamb = 25
_
CParameter Test Conditions Symbol Value Unit
Reverse Voltage VR60 V
Power Dissipation Tamb
x
25
°
C PV215 mW
Junction Temperature Tj100
°
C
Storage Temperature Range Tstg –55...+100
°
C
Soldering Temperature t
x
5 s, 2 mm from body Tsd 260
°
C
Thermal Resistance Junction/Ambient RthJA 350 K/W
BPV10
Vishay Semiconductors
2 (5) Rev. 3, 20-May-99
www.vishay.com Document Number 81502
Basic Characteristics
Tamb = 25
_
C
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 50 mA VF1.0 1.3 V
Breakdown Voltage IR = 100
m
A, E = 0 V(BR) 60 V
Reverse Dark Current VR = 20 V, E = 0 Iro 1 5 nA
Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 CD11 pF
VR = 5 V, f = 1 MHz, E = 0 CD3.8 pF
Open Circuit Voltage EA = 1 klx Vo480 mV
g
Ee = 1 mW/cm2,
l
= 950 nm Vo450 mV
Short Circuit Current EA = 1 klx Ik80
m
A
Ee = 1 mW/cm2,
l
= 950 nm Ik65
m
A
Reverse Light Current EA = 1 klx, VR = 5 V Ira 85
m
A
g
Ee = 1 mW/cm2,
l
= 950 nm, VR = 5 V Ira 38 70
m
A
Absolute Spectral Sensitivity VR = 5 V,
l
= 950 nm s(
l
) 0.55 A/W
Angle of Half Sensitivity ϕ±20 deg
Wavelength of Peak Sensitivity
l
p920 nm
Range of Spectral Bandwidth
l
0.5 570...1040 nm
Quantum Efficiency
l
= 950 nm
h
72 %
Noise Equivalent Power VR = 20 V,
l
= 950 nm NEP 3x10–14 W/√ Hz
Detectivity VR = 20 V,
l
= 950 nm D*3x1012 cm√Hz/
W
Rise Time VR = 50 V, RL = 50
W
,
l
= 820 nm tr2.5 ns
Fall Time VR = 50 V, RL = 50
W
,
l
= 820 nm tf2.5 ns
Typical Characteristics (Tamb = 25
_
C unless otherwise specified)
20 40 60 80
1
10
100
1000
I – Reverse Dark Current ( nA )
ro
Tamb – Ambient Temperature ( °C )
100
94 8436
VR=20V
Figure 1. Reverse Dark Current vs. Ambient Temperature
020406080
0.6
0.8
1.0
1.2
1.4
I – Relative Reverse Light Current
ra rel
Tamb – Ambient Temperature ( °C )
100
94 8416
VR=5V
l
=950nm
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
BPV10
Vishay Semiconductors
3 (5)
Rev. 3, 20-May-99 www.vishay.com
Document Number 81502
0.01 0.1 1
0.1
1
10
100
1000
I – Reverse Light Current ( A )
ra
Ee – Irradiance ( mW/cm2 )
10
94 8437
m
VR=5V
l
=950nm
Figure 3. Reverse Light Current vs. Irradiance
0.1 1 10
1
10
100
VR – Reverse Voltage ( V )
100
94 8438
I – Reverse Light Current ( A )
ra
m
1mW/cm2
0.5mW/cm2
0.2mW/cm2
0.1mW/cm2
0.05mW/cm2
0.02mW/cm2
l
=950nm
Figure 4. Reverse Light Current vs. Reverse Voltage
0
2
4
6
8
12
10
0.1 1 10
C – Diode Capacitance ( pF )
D
VR – Reverse Voltage ( V )
100
94 8439
E=0
f=1MHz
Figure 5. Diode Capacitance vs. Reverse Voltage
350 550 750 950
0
0.2
0.4
0.6
0.8
1.0
1150
94 8440
S ( ) – Relative Spectral Sensitivity
rel
l
– Wavelength ( nm )
l
Figure 6. Relative Spectral Sensitivity vs. Wavelength
0.4 0.2 0 0.2 0.4
S – Relative Sensitivity
rel
0.6
94 8624
0.6
0.9
0.8
0°30°
10
°20
°
40°
50°
60°
70°
80°
0.7
1.0
Figure 7. Relative Radiant Sensitivity vs.
Angular Displacement
BPV10
Vishay Semiconductors
4 (5) Rev. 3, 20-May-99
www.vishay.com Document Number 81502
Dimensions in mm
9612199
BPV10
Vishay Semiconductors
5 (5)
Rev. 3, 20-May-99 www.vishay.com
Document Number 81502
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
