www.irf.com 1
08/02/11
IRLR8256PbF
IRLU8256PbF
HEXFET® Power MOSFET
Notes through are on page 11
Applications
PD - 96208A
D-Pak
IRLR8256PbF
I-Pak
IRLU8256PbF
G
S
D
G
D
S
GDS
Gate Drain Source
lHigh Frequency Synchronous Buck
Converters for Computer Processor Power
lHigh Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Benefits
lVery Low RDS(on) at 4.5V VGS
lUltra-Low Gate Impedance
lFully Characterized Avalanche Voltage
and Current
lLead-Free
lRoHS compliant
V
DSS
R
DS(on)
max
Qg
25V
5.7m
:
10nC
Parameter Units
V
DS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
ID @ TC = 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
g
P
D
@T
C
= 100°C
Maximum Power Dissipation
g
Linear Derating Factor W/°C
T
J Operating Junction and
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
h
––– 2.4
R
θJA
Junction-to-Ambient (PCB Mount)
g
––– 50
R
θJA Junction-to-Ambient ––– 110
V
°C
°C/W
W
A
0.42
31
300 (1.6mm from case)
-55 to + 175
63
Max.
81
f
57
f
325
± 20
25
IRLR/U8256PbF
2www.irf.com
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
BV
DSS
Drain-to-Source Breakdown Voltage 25 ––– ––– V
ΔΒ
V
DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 18 ––– mV/°C
––– 4.2 5.7
––– 6.7 8.5
V
GS(th)
Gate Threshold Voltage 1.35 1.8 2.35 V
Δ
V
GS(th)
/
Δ
T
J
Gate Threshold Voltage Coefficient ––– -7.2 ––– mV/°C
––– ––– 1.0
––– ––– 150
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 81 ––– ––– S
Q
g
Total Gate Charge ––– 10 15
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 2.3 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.6 ––– nC
Q
gd
Gate-to-Drain Charge ––– 3.6 –––
Q
godr
Gate Charge Overdrive ––– 2.6 ––– See Fig. 16
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)––– 5.1 –––
Q
oss
Output Charge ––– 9.0 ––– nC
R
G
Gate Resistance ––– 2.5 3.9 Ω
t
d(on)
Turn-On Delay Time ––– 9.7 –––
t
r
Rise Time ––– 46 –––
t
d(off)
Turn-Off Delay Time ––– 12 –––
t
f
Fall Time ––– 8.5 –––
C
iss
Input Capacitance ––– 1470 –––
C
oss
Output Capacitance ––– 453 –––
C
rss
Reverse Transfer Capacitance ––– 185 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
c
mJ
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 19 29 ns
Q
rr
Reverse Recovery Charge ––– 17 26 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
MOSFET symbol
–––
V
GS
= 4.5V
Typ.
–––
–––
I
D
= 20A
V
GS
= 0V
V
DS
= 13V
T
J
= 25°C, I
F
= 20A, V
DD
= 13V
di/dt = 250A/μs
e
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
e
showing the
integral reverse
p-n junction diode.
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
e
V
DS
= V
GS
, I
D
= 25μA
R
G
= 1.8
Ω
V
DS
= 13V
I
D
= 20A
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 25A
e
V
GS
= 4.5V, I
D
= 20A
e
V
GS
= 20V
V
GS
= -20V
V
DS
= 13V, I
D
= 20A
V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
Conditions
6.3
See Fig. 14
Max.
86
20
ƒ = 1.0MHz
mΩ
81
f
325
μA
nA
ns
pF
A
––– –––
––– –––
I
GSS
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
IRLR/U8256PbF
www.irf.com 3
Fig 4. Normalized On-Resistance
vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
≤60μs PULSE WIDTH
Tj = 25°C
2.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
2.5V
≤60μs PULSE WIDTH
Tj = 175°C
VGS
TOP 10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
1 2 3 4 5 6 7 8
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
VDS = 15V
≤60μs PULSE WIDTH
-60 -40 -20 020 40 60 80 100120140160180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 25A
VGS = 10V
IRLR/U8256PbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
012345678910111213
QG, Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
VGS, Gate-to-Source Voltage (V)
VDS= 20V
VDS= 13V
ID= 20A
0.0 0.5 1.0 1.5 2.0 2.5
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
0 1 10 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100μsec
1msec
10msec
IRLR/U8256PbF
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Threshold Voltage vs. Temperature
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
10
20
30
40
50
60
70
80
90
ID, Drain Current (A)
Limited By Package
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
VGS(th), Gate threshold Voltage (V)
ID = 25μA
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
Ci i/Ri
Ci= τi/Ri
τ
τC
τ4
τ4
R4
R4Ri (°C/W) τi (sec)
0.04252 0.000007
0.57953 0.000109
1.17480 0.001003
0.60472 0.005976
IRLR/U8256PbF
6www.irf.com
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13. Gate Charge Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-
VDD
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
350
400
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 5.57A
8.50A
BOTTOM 20A
IRLR/U8256PbF
www.irf.com 7
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Fig 16. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2QgdQgodr
IRLR/U8256PbF
8www.irf.com
D-Pak (TO-252AA) Part Marking Information
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
INTERNATIONAL
AS SEMBLED ON WW 16, 2001
IN THE ASSEMBLY LINE "A"
OR
Note: "P" in assembly line position
EXAMPLE:
LOT CODE 1234
THIS IS AN IRFR120
WIT H AS S E MB L Y
i ndicates "L ead-F r ee"
PRODUCT (OPTIONAL)
P = DESIGNATES LEAD-FREE
A = AS S E MB L Y S I T E CODE
PART NUMBER
WEEK 16
DAT E CODE
YEAR 1 = 2001
RECTIFIER
INTE RNATIONAL
LOGO
LOT CODE
AS S E MB L Y
3412
IRFR120
116A
LINE A
34
RECTIFIER
LOGO
IRFR120
12
AS S E MB L Y
LOT CODE
YEAR 1 = 2001
DAT E CODE
PART NUMBER
WE E K 16
"P" in as s embly line position indicates
"L ead-F r ee" qualificati on to the cons umer-l evel
P = DESIGNATES LEAD-FREE
PRODUCT QUALIFIED TO T HE
CONSUMER LEVEL (OPTIONAL)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRLR/U8256PbF
www.irf.com 9
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
78
LINE A
LOGO
INT ERNATIONAL
RECTIFIER
OR
PRODUCT (OPTIONAL)
P = DE S I GNAT E S L E AD-F R E E
A = ASSEMBLY SITE CODE
IRFU120
PART NUMBER
WE E K 19
DAT E CODE
YEAR 1 = 2001
RECTIF IER
INTERNATIONAL
LOGO
ASSEMBLY
LOT CODE
IRFU120
56
DAT E CODE
PART NUMBER
LOT CODE
ASSEMBLY
56 78
YEAR 1 = 2001
WEEK 19
119A
indi cates L ead- F r ee"
AS S E MBLED ON WW 19, 2001
IN THE ASSEMBLY LINE "A"
Note: "P" in ass embly line pos ition
EXAMPLE:
WIT H AS S E MB L Y
THIS IS AN IRFU120
LOT CODE 5678
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRLR/U8256PbF
10 www.irf.com
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIRECTION FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRLR/U8256PbF
www.irf.com 11
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.43mH, RG = 25Ω, IAS = 20A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable junction temperature.
Package limitation current is 50A.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C. Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-790
Visit us at www.irf.com for sales contact information.08/2011
Note
Form Quantity
IRLR8256PBF D-PAK Tube/Bulk 75
IRLR8256TRPBF D-PAK Tape and Reel 2000
IRLR8256PBF
I-PAK
Tube/Bulk
75
Orderable part number Package Type Standard Pack
† Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability
†† Higher qualification ratings may be available should the user have such requirements. Please contact
your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
MSL1
(per JEDEC J-STD-020D†††)
I-PAK Not applicable
RoHS Compliant Yes
Comments: This family of products has passed JEDEC’s
Industrial qualification. IR’s Consumer qualification level is
granted by extension of the higher Industrial level.
Moisture Sensitivity Level
D-PAK
Qualification Information†
Qualification level Industrial ††
(per JEDEC JESD47F††† guidelines)
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.