PART NUMBER NE25139
PACKAGE OUTLINE 39
SYMBOL PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
NF Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 900 MHz dB 1.1 2.5
GPS Power Gain at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 900 MHz dB 16 20
BVDSX Drain to Source Breakdown Voltage at VG1S = -4 V,
VG2S = 0, ID = 10 µAV13
IDSS Saturated Drain Current at VDS = 5 V, VG2S = 0 V, VG1S = 0 V mA 5 20 40
VG1S (OFF) Gate 1 to Source Cutoff Voltage at VDS = 5 V,
VG2S = 0 V, ID = 100 µA V -3.5
VG2S (OFF) Gate 2 to Source Cutoff Voltage at VDS = 5 V,
VG1S = 0 V, ID = 100 µA V -3.5
IG1SS Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S = 0 µA10
IG2SS Gate 2 Reverse Current at VDS = 0, VG2S = -4V, VG1S = 0 µA10
|YFS| Forward Transfer Admittance at VDS = 5 V, VG2S = 1 V,
ID = 10 mA, f = 1.0 kHz mS 18 25 35
CISS Input Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 1 MHz pF 0.5 1.0 1.5
CRSS Reverse Transfer Capacitance at VDS = 5 V, VG2S = 1 V,
ID = 10 mA, f = 1 MHz pF 0.02 0.03
FEATURES
• SUITABLE FOR USE AS RF AMPLIFIER IN
UHF TUNER
• LOW CRSS: 0.02 pF (TYP)
• HIGH GPS: 20 dB (TYP) AT 900 MHz
• LOW NF: 1.1 dB TYP AT 900 MHz
• LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm
• ION IMPLANTATION
• AVAILABLE IN TAPE & REEL OR BULK
Power Gain, G
PS
(dB)
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage, VDS (V)
Noise Figure, NF (dB
)
GENERAL PURPOSE
DUAL-GATE GaAS MESFET NE25139
DESCRIPTION
The NE251 is a dual gate GaAs FET designed to provide
flexibility in its application as a mixer, AGC amplifier, or low
noise amplifier. As an example, by shorting the second gate
to the source, higher gain can be realized than with single gate
MESFETs. This device is available in a mini-mold (surface
mount) package.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
California Eastern Laboratories
20
0
10
0 5 10 0
10
GPS
VG2S = 1 V
VG2S = 0.5 V
VG2S = 2 V
ID = 10 mA
f = 900 MHz 5
NF
SYMBOLS PARAMETERS UNITS RATINGS
VDS Drain to Source Voltage V 13
VG1S Gate 1 to Source Voltage V -4.5
VG2S Gate 2 to Source Voltage V -4.5
IDDrain Current mA IDSS
PTTotal Power Dissipation mW 200
TCH Channel Temperature °C 125
TSTG Storage Temperature °C -55 to +125
Note:
1. Operation in excess of anyone of these parameters may result
in permanent damage.
Ambient Temperature, TA (°C)
TOTAL POWER DISSIPATION VS.
AMBIENT TEMPERATURE DRAIN CURRENT vs.
GATE 1 TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
TYPICAL PERFORMANCE CURVES (TA = 25 °C)
Forward Transfer Admittance, |Y
FS
| (mS)
Total Power Dissipation, P
T
(mW)
Drain Current, ID (mA)
NE25139
(VDS = 5 V, VG2S = 0 V, IDS = 10 mA)
FREQ. NFOPT GAΓOPT
(GHz) (dB) (dB) MAG ANG Rn/50
0.5 0.9 18.5 0.9 18 1.9
0.9 1.2 16.0 0.82 28 1.2
1.5 1.5 14.6 0.71 45 0.9
2.0 1.9 12.5 0.55 75 0.67
3.0 2.5 11.0 0.34 116 0.5
4.0 3.3 9.5 0.25 154 0.4
TYPICAL NOISE PARAMETERS (TA = 25°C)
Drain Current, I
D
(mA)
250
200
150
100
50
00 25 50 75 100 125
FREE AIR
Gate 1 to Source Voltage, VG1S (V)
FORWARD TRANSFER ADMITTANCE vs.
GATE 1 TO SOURCE VOLTAGE
Forward Transfer Admittance, |Y
FS
| (mS)
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
30
20
10
0
0 10 20 30
V
G2S
= 1.0 V
V
G2S
= 0.5 V
V
DS
= 5 V
f = 1 kHz
Gate 1 to Source Voltage, VG1S (V)
30
20
10
0
-2.0 -1.0 0 +1.0
0.5 V
0 V
-0.5 V
VG2S = 1.0V
VDS = 5V
30
20
10
0
-1.0 0 +1.0
0 V
V
G2S
= 1.0
0.5 V
-0.5 V
V
DS
= 5V
f = 1kHz
-2.0
Input Capacitance, C
ISS
(pF)
POWER GAIN AND NOISE FIGURE vs.
GATE 2 TO SOURCE VOLTAGE
Drain Current, ID (mA)
POWER GAIN AND NOISE FIGURE vs.
DRAIN CURRENT
2.0
1.0
-1.0
0 +1.0
V
G2S
= 1 V at I
D
= 10 mA
V
G2S
= 1 V at I
D
= 5 mA
V
DS
= 5 V
f = 1kHz
1
1
Gate 2 to Source Voltage, VG2S (V)
INPUT CAPACITANCE vs.
GATE 2 TO SOURCE VOLTAGE
Gate 2 to Source Voltage, VG2S (V)
NE25139
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Power Gain, G
P
(dB)
Note:
1. Initial bias conditions. VG1S set to obtain
specified drain current.
Note:
1. Initial bias conditions. VG1S set to obtain
specified drain current.
Noise Figure, NF (dB)
Noise Figure, NF (dB)
Power Gain, G
P
(dB)
30
15
0
-15
-30
-45
-3.0 -2.0 -1.0 0 +1.0 +2.0 0
5
10
GPS
NF
VDS = 5 V
VG2S = 1 V
ID = 10 mA
f = 900 MHz
1
25
20
15
10
5
0
0 5 10 0
5
VDS = 5 V
VG2S = 1 V
f = 900 MHz
GPS
NF
10
Parameters FET1 FET2 Parameters FET1 FET2
UGW 100e-6 100e-6 IDSOC 0.07 0.07
NGF 4 4 RDB 1.0e9 1.0e9
IS 8.78e-10 8.78e-10 CBS 0.16e-12 0.16e-12
N 1.33 1.33 GDBM 0.005 0.005
RG 0 0 KDB 11.1 11.1
RD 0 0 VDSM 7.1e-11 7.1e-11
RS 0 0 GMMAXAC 0.0475 0.0875
RIS 0 0 GAMMAAC 0.0107 0.0051
RID 0 0 KAPAAC 0.0001 0.0052
TAU 5.17e-12 5.17e-12 PEFFAC 44.9 44.9
CDSO 1.19e-13 1.19e-13 VTOAC -1.584 -1.545
C11O 6.1e-13 6.1e-13 VTSOAC -100 -100
C11TH 1.6e-13 1.6e-13 VDELTAC 0.062 0.062
VINFL -1.1 -1.1 GMMAX 0.0554 0.0304
DELTGS 1.82 1.82 GAMMA 0.006 0.005
DELTDS 0.682 0.682 KAPA 0.046 0.0005
LAMBDA \0.036 0.036 PEFF 1.636 1.636
C11DELT 0 0 VTO -1.57 -1.5
C12O 0 0 VTSO -100 -10
C12SAT 6.81e-14 6.81e-14 VDELT 0.135 0.1
CGDSAT 6.81e-14 6.81e-14 VCH 1 1
KBK 0.03 0.03 VSAT 1.119 1.119
VBR 6.5 6.5 VGO -0.654 -0.0035
NBR 2 2 VDSO 3 10
NONLINEAR MODEL
FET NONLINEAR MODEL PARAMETERS(1)
(1) Libra EEFET3 Model
time seconds
capacitance farads
inductance henries
resistance ohms
voltage volts
current amps
Parameter Units
UNITS FOR MODEL PARAMETERS
NE25139
NE25139
MODEL RANGE
Frequency: 0.1 to 4 GHz
Bias: VDS = 5 V, Vg1s= -0.785 V, Vg2s= 0 V, ID = 10 mA
SCHEMATIC
P1
port = 3
Pgate1
port = 1
C12
C = 0.32
Cg1s
C = 0.41
P4
port = 4
Pdrain
port = 2
Cg1d
C = 5.64e-03
Ls
L = 1.78
Rd
R = 4.58
RDS
R = 711
R12
R = 1.13
Rs
R = 5.79
Lg2
L = 0.40
Lg1
L = 1.65 Rg1
R = 1.52
Cg2s
C = 0.39
CDS
C = 7.60e-02
Rg2
R = 1.44
Cg2d
C = 0.15
CAP
CAP
CAP
CAP
CAP
CAP
RES
RES
RES
RES
RES
RES
IND
IND
IND
PORT
PORT
PORT
PORT
EEFET3
FET2
UGW=0
N=0
FILE = NE720_b.mdif
MODE = nonlinear
EEFET3
FET1
UGW=0
N=0
FILE = NE720_b.mdif
MODE = nonlinear
NOTES:
1. This UGW value scales the model parameters on page 1.
2. This N value is the number of gate fingers and scales the
model parameters on page 1.
UNITS
Parameter Units
capacitance picofarads
inductance nanohenries
resistance ohms
NONLINEAR MODEL
NE25139
TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C)
Note:
1. Gain Calculations:
NE25139
VDS = 5 V, VG2S = 0 V, IDS = 10 mA
FREQUENCY S11 S21 S12 S22 KS21 MAG1
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB) (dB)
0.1 1.0 -4 1.96 174 0.001 87 0.96 -1
0.2 1.0 -8 1.92 169 0.001 85 0.96 -2
0.4 0.99 -15 1.91 158 0.001 82 0.95 -3
0.6 0.97 -23 1.90 148 0.002 81 0.94 -3
0.9 0.94 -35 1.90 132 0.004 80 0.94 -4
1.0 0.92 -39 1.90 126 0.004 79 0.94 -5
1.5 0.82 -61 1.88 99 0.006 78 0.94 -6
2.0 0.69 -86 1.52 71 0.008 95 0.95 -9
2.5 0.60 -110 1.41 45 0.012 118 0.96 -12
3.0 0.51 -131 1.39 19 0.023 153 0.97 -18
3.5 0.51 -147 1.37 -6 0.039 162 0.97 -27
4.0 0.63 -167 1.20 -47 0.042 157 0.96 -42
0.47 5.8 32.9
0.51 5.7 32.8
0.70 5.6 32.8
1.14 5.6 27.5
1.18 5.6 24.2
1.49 5.6 22.6
2.03 5.5 19.2
2.21 3.6 16.6
1.34 3.0 17.2
0.32 2.9 17.8
0.04 2.1 15.1
0.07 1.6 14.6
Coordinates in Ohms
Frequency in GHz
(VDS = 5 V, VG2S = 0 V, IDS = 10 mA)
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG = |S
21
|
|S
12
|K - 1
).
2
(
K ± ∆ = S
11
S
22
- S
21
S
12
When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S
21
|
|S
12
|, K = 1 + | ∆ | - |S
11
| - |S
22
|
222
2 |S
12
S
21
|
,
j250
j150
j100
j50
10 1025 50 100 150 250
j10
0
-j10
-j25
-j50
-j100
-j150
-j250
S11
.1 GHz
S22
.1 GHz
S22
4 GHz
S11
4 GHz
+90
˚
+60
˚
+30
˚
+120
˚
+150
˚
-150
˚
-120
˚
-90
˚
-60
˚
-30
˚
0
˚
+180
˚
–S21
.1 GHz
S21
.25
1.0
1.5
2.0
2.5
.20.15.10.5
S12
.1 GHz
S12
4 GHz
KS21 MAG1
(dB) (dB)
Note:
1. Gain Calculations:
PART AVAILABILITY IDSS RANGE MARKING
NUMBER (mA)
NE25139 Bulk up to 3K 5 - 40
NE25139-T1 3K/Reel 5 - 40
NE25139U71 Bulk up to 3K 5 - 15 U71
NE25139T1U71 3K/Reel 5 - 15 U71
NE25139U72 Bulk up to 3K 10 - 25 U72
NE25139T1U72 3K/Reel 10 - 25 U72
NE25139U73 Bulk up to 3K 20 - 35 U73
NE25139T1U73 3K/Reel 20 - 35 U73
NE25139U74 Bulk up to 3K 30 - 40 U74
NE25139T1U74 3K/Reel 30 - 40 U74
ORDERING INFORMATION
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 39
(SOT-143)
NE25139
VDS = 5 V, VG2S = 1 V, ID = 10 mA
Coordinates in Ohms
Frequency in GHz
(VDS = 5 V, VG2S = 1 V, ID = 10 mA)
TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C)
FREQUENCY S11 S21 S12 S22
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
0.1 .99 -3 2.36 177 .001 87 .97 -1
0.2 .99 -7 2.39 169 .001 85 .98 -3
0.3 .99 -9 2.31 164 .002 82 .98 -3
0.4 .98 -13 2.23 160 .002 82 .97 -6
0.5 .97 -16 2.42 158 .003 81 .99 -6
0.6 .97 -19 2.30 150 .003 81 .96 -8
0.7 .96 -22 2.33 146 .004 80 .99 -9
0.8 .95 -25 2.23 142 .005 79 .96 -9
0.9 .94 -29 2.45 137 .005 79 .99 -13
1.0 .92 -29 2.30 131 .006 78 .97 -11
1.1 .91 -35 2.35 126 .006 78 .98 -15
1.2 .88 -35 2.37 124 .006 78 .99 -13
0.47 5.83 2.9
0.51 5.7 32.8
0.70 5.6 32.8
1.14 5.6 27.5
1.18 5.6 24.2
1.49 5.6 22.6
2.03 5.5 19.2
2.21 3.6 16.6
1.34 3.0 17.2
0.32 2.9 17.8
0.04 2.1 15.1
0.07 1.6 14.6
MAG = |S21|
|S12|K - 1 ).
2
(K ± ∆ = S11 S22 - S21 S12
When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21|
|S12|, K = 1 + | ∆ | - |S11| - |S22|
222
2 |S12 S21|,
MAG = Maximum Available Gain, MSG = Maximum Stable Gain
NE25139
2.8+0.2
-0.3 +0.10
-0.05
(LEADS 2, 3, 4)
0.6 +0.10
-0.05
0.16+0.10
-0.06
5˚
5˚
0.8
1.1+0.2
-0.1
1
23
0 to 0.1
4
0.4
2.9 ± 0.2 0.95
0.85
1.9
1.5+0.2
-0.1
Note: All dimensions are typical unless otherwise specified.
PIN
CONNECTIONS
1. Source
2. Drain
3. Gate 2
4. Gate 1
j250
j150
j100
j50
j25
j10
0
-j10
-j25
-j50
-j100
-j150
-j250
S11
.1 GHz
S22
.1 GHz
S22
4 GHz
S11
4 GHz
10 25 50 100 150 250
+90
˚
+60
˚
+30
˚
+120
˚
+150
˚
-150
˚
-120
˚
-90
˚
-60
˚
-30
˚
0
˚
+180
˚
–
S21
1.2 GHz
S21
.25
1.0
1.5
2.0
2.5
.20.15.10.5
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
8/98
DATA SUBJECT TO CHANGE WITHOUT NOTICE
