AO4882 40V Dual N-Channel MOSFET General Description Product Summary The AO4882 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications. ID (at VGS=10V) VDS 40V 8A RDS(ON) (at VGS=10V) < 19m RDS(ON) (at VGS=4.5V) < 27m 100% UIS Tested 100% Rg Tested SOIC-8 Top View D1 D2 Bottom View Top View S2 G2 S1 G1 1 2 3 4 D2 D2 D1 D1 8 7 6 5 G1 G2 S1 S2 Pin1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25C Continuous Drain Current C Units V 20 V 8 ID TA=70C Maximum 40 6 A IDM 40 Avalanche Current C IAS 15 A Avalanche energy L=0.1mH C TA=25C Power Dissipation B TA=70C EAS 11 mJ Junction and Storage Temperature Range TJ, TSTG Pulsed Drain Current Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 0 : Dec 2011 2 PD Symbol t 10s Steady-State Steady-State W 1.3 RJA RJL www.aosmd.com -55 to 150 Typ 48 74 32 C Max 62.5 90 40 Units C/W C/W C/W Page 1 of 5 AO4882 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250A, VGS=0V TJ=55C Gate-Body leakage current VDS=0V, VGS=20V VDS=VGS ID=250A 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 40 100 nA 1.9 2.4 V 15.4 19 22.5 29 VGS=4.5V, ID=4A 21 27 m 1 V 2.5 A VGS=10V, ID=8A Static Drain-Source On-Resistance TJ=125C A gFS Forward Transconductance VDS=5V, ID=8A 33 VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance A 5 Gate Threshold Voltage Units V 1 VGS(th) Coss Max 40 VDS=40V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=20V, f=1MHz S 415 pF 112 pF 11 VGS=0V, VDS=0V, f=1MHz pF 2.2 3.5 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 6.5 12 nC Qg(4.5V) Total Gate Charge 3 6 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=20V, ID=8A VGS=10V, VDS=20V, RL=2.5, RGEN=3 1 m 1.2 nC 1.1 nC 4 ns 3 ns 15 ns tf Turn-Off Fall Time 2 ns trr Body Diode Reverse Recovery Time IF=8A, dI/dt=100A/s 12.5 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/s 3.5 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : Dec 2011 www.aosmd.com Page 2 of 5 AO4882 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10V VDS=5V 4.5V 25 15 3.5V ID(A) ID (A) 20 15 10 3V 125C 10 5 25C 5 VGS=2.5V 0 0 0 1 2 3 4 0 5 50 2 3 4 5 6 Normalized On-Resistance 1.8 40 RDS(ON) (m ) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 30 VGS=4.5V 20 10 VGS=10V 0 1.6 VGS=10V ID=8A 1.4 17 5 2 VGS=4.5V10 1.2 ID=4A 1 0.8 0 3 6 9 12 15 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 0 Temperature (C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 60 1.0E+02 ID=8A 1.0E+01 50 40 1.0E+00 125C IS (A) RDS(ON) (m ) 40 30 20 125C 1.0E-01 1.0E-02 1.0E-03 10 25C 1.0E-04 25C 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0 : Dec 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO4882 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 600 VDS=20V ID=8A 500 Capacitance (pF) VGS (Volts) 8 6 4 2 400 300 200 Coss 100 0 Crss 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 0 10 20 30 VDS (Volts) Figure 8: Capacitance Characteristics 40 10000 100.0 1.0 10s 1000 100 Power (W) TA=25C RDS(ON) limited 10.0 ID (Amps) Ciss 1ms 10ms TJ(Max)=150C TA=25C 0.1 10s 100 10 DC 0.0 0.01 0.1 1 VDS (Volts) 10 100 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=90C/W 0.1 0.01 PD Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0 : Dec 2011 www.aosmd.com Page 4 of 5 AO4882 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0 : Dec 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5