Philips Semiconductors Objective specification
Three quadrant triacs BTA208S series D, E and F
guaranteed commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX. UNIT
triacs in a plastic envelope suitable for
surface mounting, intended for use in BTA208S- 600D -
motorcontrol circuits or withother highly BTA208S- 600E 800E
inductive loads. These devices balance BTA208S- 600F 800F
the requirements of commutation VDRM Repetitive peak off-state 600 800 V
performance and gate sensitivity. The voltages
"sensitivegate"Eseriesand"logiclevel" IT(RMS) RMS on-state current 8 8 A
D series areintended for interfacing with ITSM Non-repetitive peak on-state 65 65 A
low power drivers, including micro current
controllers.
PINNING - SOT428 PIN CONFIGURATION SYMBOL
PIN Standard
NUMBER S
1 MT1
2 MT2
3 gate
tab MT2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-600 -800
VDRM Repetitive peak off-state - 6001800 V
voltages
IT(RMS) RMS on-state current full sine wave; - 8 A
Tmb ≤ 102 ˚C
ITSM Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge
t = 20 ms - 65 A
t = 16.7 ms - 72 A
I2tI
2t for fusing t = 10 ms - 21 A2s
dIT/dt Repetitive rate of rise of ITM = 12 A; IG = 0.2 A; 100 A/µs
on-state current after dIG/dt = 0.2 A/µs
triggering
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms - 0.5 W
period
Tstg Storage temperature -40 150 ˚C
TjOperating junction - 125 ˚C
temperature
1
2
3
tab
T1T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
October 1999 1 Rev 1.200
Philips Semiconductors Objective specification
Three quadrant triacs BTA208S series D, E and F
guaranteed commutation
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance full cycle - - 2.0 K/W
junction to mounting base half cycle - - 2.4 K/W
Rth j-a Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 - 75 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BTA208S- ...D ...E ...F
IGT Gate trigger current2VD = 12 V; IT = 0.1 A
T2+ G+ - - 5 10 25 mA
T2+ G- - - 5 10 25 mA
T2- G- - - 5 10 25 mA
ILLatching current VD = 12 V; IGT = 0.1 A
T2+ G+ - - 15 20 25 mA
T2+ G- - - 25 30 40 mA
T2- G- - - 25 30 40 mA
IHHolding current VD = 12 V; IGT = 0.1 A - - 15 25 30 mA
VTOn-state voltage IT = 10 A - 1.3 1.65 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C
IDOff-state leakage current VD = VDRM(max); - 0.1 0.5 mA
Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BTA208S- ...D ...E ...F
dVD/dt Critical rate of rise of VDM = 67% VDRM(max);306070 -V/µs
off-state voltage Tj = 110 ˚C; exponential
waveform; gate open
circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 1.8 3.5 4.5 - A/ms
commutating current IT(RMS) = 8 A;
dVcom/dt = 20v/µs; gate
open circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 3.5 4.5 5.5 - A/ms
commutating current IT(RMS) = 8 A;
dVcom/dt = 0.1v/µs; gate
open circuit
tgt Gate controlled turn-on ITM = 12 A; VD = VDRM(max);- - - 2 - µs
time IG = 0.1 A; dIG/dt = 5 A/µs
2 Device does not trigger in the T2-, G+ quadrant.
October 1999 2 Rev 1.200
Philips Semiconductors Objective specification
Three quadrant triacs BTA208S series D, E and F
guaranteed commutation
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.1 g
Fig.1. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.2. SOT428 : minimum pad sizes for surface mounting
.
Notes
1. Plastic meets UL94 V0 at 1/8".
6.22 max
2.38 max
0.93 max
6.73 max
0.3
10.4 max
0.5
0.8 max
(x2)
2.285 (x2)
0.5
seating plane
1.1
0.5 min
5.4
4 min
4.6
1
2
3
tab
7.0
7.0
2.15
2.5
4.57
1.5
October 1999 3 Rev 1.200
Philips Semiconductors Objective specification
Three quadrant triacs BTA208S series D, E and F
guaranteed commutation
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1999 4 Rev 1.200
