Integrated 500 mA Load Switch
with Quad Signal Switch
Data Sheet
ADP1190A
FEATURES
Low input voltage range: 1.4 V to 3.6 V
Load switch
Low RDSON_L of 65 mΩ at 3.6 V
500 mA continuous operating current
4 SPST normally open signal switches
RDSON_S of 3 Ω at 1.8 V
Internal charge pump for constant signal switch RDSON
Output discharge resistance (RDIS): 215 Ω at the output side
of the load switch and each analog signal switch output
Built-in level shift for control logic that can operate by
a 1.2 V logic
Ultralow shutdown current: 0.7 µA
Ultrasmall 1.2 mm × 1.6 mm × 0.5 mm, 12-ball,
0.4 mm pitch WLCSP
APPLICATIONS
Mobile phones
SIM card disconnect switches
Digital cameras and audio devices
Portable and battery-powered equipment
FUNCTIONAL BLOCK DIAGRAM
Figure 1.
GENERAL DESCRIPTION
The ADP1190A is an integrated high-side load switch with four
signal switches designed for operation from 1.4 V to 3.6 V. This
load switch provides power domain isolation for extended power
battery life. The load switch is a low on-resistance P-channel
MOSFET that supports up to 500 mA of continuous load
current and minimizes power loss. Integrated with the load
switch are four normally open, 3 Ω single pole, single throw
(SPST) signal switches controlled by the charge pump.
Beyond its excellent operating performance, the ADP1190A
occupies minimal printed circuit board (PCB) space with an
area less than 1.92 mm2 and a height of 0.50 mm. The ADP1190A
is available in an ultrasmall 1.2 mm × 1.6 mm × 0.5 mm, 12-ball,
0.4 mm pitch W L C S P.
S1
S2
S3
S4
IN
5ms
DEBOUNCE
LOAD
SWITCH
ADP1190A
CHARGE
PUMP
EN
T1
T2
T3
T4
OUT
GND
ON
OFF
11539-001
Rev. 0 Document Feedback
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Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2013 Analog Devices, Inc. All rights reserved.
Technical Support www.analog.com
ADP1190A Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................ 4
Thermal Data ................................................................................ 4
Thermal Resistance ...................................................................... 4
ESD Caution .................................................................................. 4
Pin Configuration and Function Descriptions ..............................5
Typical Performance Characteristics ..............................................6
Theory of Operation .........................................................................9
Outline Dimensions ....................................................................... 11
Ordering Guide .......................................................................... 11
REVISION HISTORY
9/13—Revision 0: Initial Version
Rev. 0 | Page 2 of 12
Data Sheet ADP1190A
SPECIFICATIONS
VIN = 1.8 V, VEN = VIN, ILOAD = 200 mA, CIN = COUT = 1 µF, TA = 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT VOLTAGE RANGE VIN TJ = −40°C to +85°C 1.4 3.6 V
EN INPUT
EN Input Threshold VEN_TH 1.4 V < VIN < 1.8 V, TJ = −40°C to +85°C (active low) 0.35 1.2 V
1.8 V ≤ VIN ≤ 3.6 V, TJ = −40°C to +85°C (active low) 0.45 1.2 V
Logic High Voltage VIH 1.4 V ≤ VIN ≤ 3.6 V 1.2 V
Logic Low Voltage VIL 1.4 V ≤ VIN ≤ 3.6 V (chip enable) 0.35 V
CURRENT
Shutdown Current IOFF EN = VIN or open 0.7 µA
EN = VIN or open, TJ = −40°C to +85°C 2 µA
Analog Switch Off Current IA_OFF Into S1, EN = VIN 0.2 µA
LOAD SWITCH, VIN TO VOUT RESISTANCE RDSON_L VIN = 3.6 V, ILOAD = 200 mA, EN = GND 65 mΩ
VIN = 2.5 V, ILOAD = 200 mA, EN = GND 80 mΩ
VIN = 1.8 V, ILOAD = 200 mA, EN = GND, TJ = −40°C to +85°C 100 200 mΩ
SIGNAL SWITCH RESISTANCE RDSON_S Maximum value of analog input sweep
VIN = 3.6 V, ILOAD = 10 mA, EN = GND 3 Ω
VIN = 2.5 V, ILOAD = 10 mA, EN = GND 3 Ω
VIN = 1.8 V, ILOAD = 10 mA, EN = GND 3 Ω
RDS Flatness
V
IN
= 3.6 V, I
LOAD
= 10 mA,
EN
= GND
0.2
Ω
VIN = 1.8 V, ILOAD = 10 mA, EN = GND 0.2 Ω
SIGNAL SWITCH INPUT CAPACITANCE
C
IN
10
pF
OUTPUT DISCHARGE RESISTANCE RDIS At the output side of the load switch and each analog
signal switch output, T1, T2, T3, and T4
215 Ω
−3 dB BANDWIDTH BW−3 dB VIN = 3.3 V, RLOAD = 50 Ω, CLOAD = 5 pF 50 MHz
VOUT TIME
Turn-On Delay Time tON_DLY ILOAD = 200 mA, EN = GND, CLOAD = 0. 1 µF 5 ms
Turn-Off Delay Time tOFF_DLY VIN = 3.6 V, ILOAD = 200 mA, EN = 1.5 V, CLOAD = 0.1 µF 2 µs
Timing Diagram
Figure 2. Timing Diagram
90%
EN
10%
V
OUT
t
ON_DLY
t
OFF_DLY
11539-002
Rev. 0 | Page 3 of 12
ADP1190A Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
VIN to GND −0.3 V to +4.0 V
V
OUT
to GND
−0.3 V to V
IN
Sx to GND −0.3 V to +4.0 V
Tx to GND −0.3 V to +4.0 V
EN to GND −0.3 V to +4.0 V
Continuous Load Switch Current
TA = 25°C ±1 A
T
A
= 85°C
±500 mA
Continuous Diode Current −50 mA
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
Operating Temperature Range
Junction Temperature Range
−40°C to +125°C
Ambient Temperature Range −40°C to +85°C
Soldering Conditions JEDEC J-STD-020
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL DATA
Absolute maximum ratings apply individually only, not in
combination. The ADP1190A can be damaged when the
junction temperature limits are exceeded. Monitoring ambient
temperature does not guarantee that the junction temperature (TJ)
is within the specified temperature limits. In applications with
high power dissipation and poor thermal resistance, the
maximum ambient temperature may need to be derated.
In applications with moderate power dissipation and low PCB
thermal resistance, the maximum ambient temperature can
exceed the maximum limit as long as the junction temperature
is within specification limits. The TJ of the device is dependent
on the ambient temperature (TA), the power dissipation of the
device (PD), and the junction-to-ambient thermal resistance of
the package (θJA).
Maximum TJ is calculated from TA and PD using the formula
TJ = TA + (PD × θJA)
The junction-to-ambient thermal resistance (θJA) of the package
is based on modeling and calculation using a 4-layer board. The
junction-to-ambient thermal resistance is highly dependent on
the application and board layout. In applications where high
maximum power dissipation exists, close attention to thermal
board design is required. The value of θJA can vary, depending
on PCB material, layout, and environmental conditions. The
specified value of θJA is based on a 4-layer, 4 inch × 3 inch circuit
board. See JESD51-7 and JESD51-9 for detailed information
on the board construction. For additional information, see the
AN-617 Application Note, Wafer Level Chip Scale Package.
ΨJB is the junction-to-board thermal characterization parameter
with units of °C/W. ΨJB of the package is based on modeling and
calculation using a 4-layer board. JESD51-12, Guidelines for
Reporting and Using Electronic Package Thermal Information,
states that thermal characterization parameters are not the same
as thermal resistances. ΨJB measures the component power
flowing through multiple thermal paths rather than through a
single path as in thermal resistance (θJB). Therefore, ΨJB thermal
paths include convection from the top of the package as well as
radiation from the package, factors that make ΨJB more useful
in real-world applications. Maximum TJ is calculated from the
board temperature (TB) and PD using the formula
TJ = TB + (PD × ΨJB)
See JESD51-8 and JESD51-12 for more detailed information
about ΨJB.
THERMAL RESISTANCE
θJA and ΨJB are specified for the worst-case conditions, that is, a
device soldered in a circuit board for surface-mount packages.
Table 3. Thermal Resistance
Package Type θJA ΨJB Unit
12-Ball WLCSP 130 29.2 °C/W
ESD CAUTION
Rev. 0 | Page 4 of 12
Data Sheet ADP1190A
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 3. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
A1
GND
Ground.
B1 EN Enable Input, Active Low.
C1 IN Input Voltage.
D1 OUT Load Switch Output Voltage.
A2 T1 Channel 1 Analog Switch. Connect Pin A2 to the SIM card socket (has active discharge).
B2 T2 Channel 2 Analog Switch. Connect Pin B2 to the SIM card socket (has active discharge).
C2 T3 Channel 3 Analog Switch. Connect Pin C2 to the SIM card socket (has active discharge).
D2 T4 Channel 4 Analog Switch. Connect Pin D2 to the SIM card socket (has active discharge).
A3 S1 Channel 1 Analog Switch. Connect Pin A3 to the microcontroller.
B3 S2 Channel 2 Analog Switch. Connect Pin B3 to the microcontroller.
C3
S3
Channel 3 Analog Switch. Connect Pin C3 to the microcontroller.
D3
S4
Channel 4 Analog Switch. Connect Pin D3 to the microcontroller.
TOP VIEW
(BAL L SI DE DOW N)
Not t o Scal e
ADP1190A
GND T1 S1
EN T2 S2
IN T3 S3
OUT T4 S4
1
A
B
C
D
2 3
11539-003
Rev. 0 | Page 5 of 12
ADP1190A Data Sheet
TYPICAL PERFORMANCE CHARACTERISTICS
VIN = 1.8 V, VEN = VIN, ILOAD = 200 mA, CIN = COUT = 1 µF, TA = 25°C, unless otherwise noted.
Figure 4. Load Switch RDSON vs. Input Voltage (VIN) for Different Load
Currents
Figure 5. Load Switch RDSON vs. Temperature for Different Load Currents,
VIN = 1.8 V
Figure 6. Load Switch RDSON vs. Temperature for Different Load Currents,
VIN = 3.6 V
Figure 7. Load Switch Voltage Drop vs. Load Current (ILOAD) for Different Input
Voltages
Figure 8. Signal Switch RDSON vs. Signal Switch Voltage, Different Input
Voltages
Figure 9. Signal Switch RDSON vs. Signal Switch Voltage for Various
Temperatures, VIN = 1.4 V
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
1.2 1.6 2.0 2.4 2.8 3.2 3.6
LOAD SW IT CH RDS
ON
(Ω)
V
IN
(V)
5mA
10mA
50mA
100mA
250mA
500mA
11539-004
0
0.02
0.04
0.06
0.08
0.10
0.12
–60 –40 –20 020 40 60 80 100
LOAD SW IT CH RDSON (Ω)
TEMPERATURE ( °C)
10mA
50mA
100mA
250mA
500mA
11539-005
0
0.02
0.04
0.06
0.08
0.10
–60 –40 –20 020 40 60 80 100
LOAD SW IT CH RDSON (Ω)
TEMPERATURE ( °C)
10mA
50mA
100mA
250mA
500mA
11539-006
0
10
20
30
40
50
60
70
10 100 1000
LOAD SW IT CH V OLTAGE DROP (mV)
I
LOAD
(mA)
1.4V
1.5V
1.6V
1.8V
2.0V
2.4V
2.8V
3.0V
3.3V
3.6V
11539-007
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
00.4 0.8 1.2 1.6 22.4 2.8 3.2 3.6
SIGNAL SWIT CH RDS
ON
(Ω)
SIGNAL SWIT CH V OLTAGE (V)
1.4V
1.6V
1.8V
2.2V
3.6V
11539-008
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
SIGNAL SWIT CH RDSON (Ω)
SIGNAL SWIT CH V OLTAGE (V)
–40°C
–5°C
+25°C
+55°C
+85°C
11539-009
Rev. 0 | Page 6 of 12
Data Sheet ADP1190A
Figure 10. Signal Switch RDSON vs. Signal Switch Voltage for Various
Temperatures, VIN = 1.8 V
Figure 11. Signal Switch RDSON vs. Signal Switch Voltage for Various
Temperatures, VIN = 3.6 V
Figure 12. Ground Current vs. Input Voltage (VIN) for Different Load Currents
Figure 13. Ground Current vs. Temperature for Different Load Currents,
VIN = 1.8 V
Figure 14. Ground Current vs. Temperature for Different Load Currents,
VIN = 3.6 V
Figure 15. No Load Ground Current vs. Input Voltage (VIN) for Various
Temperatures
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
SIGNAL SWIT CH RDS
ON
(Ω)
SIGNAL SWIT CH V OLTAGE (V)
–40°C
–5°C
+25°C
+55°C
+85°C
11539-010
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
SIGNAL SWIT CH RDS
ON
(Ω)
SIGNAL SWIT CH V OLTAGE (V)
–40°C
–5°C
+25°C
+55°C
+85°C
11539-011
0.1 0.6 1.1 1.6 2.1 2.6 3.1 3.6
0
5
10
15
20
25
1.2 1.6 2.0 2.4 2.8 3.2 3.6
GRO UND CURRE NT (µA)
V
IN
(V)
5mA
10mA
50mA
100mA
250mA
500mA
11539-012
0
5
10
15
20
25
30
–60 –40 –20 020 40 60 80 100
GRO UND CURRE NT (µA)
TEMPERATURE ( °C)
10mA
50mA
100mA
250mA
500mA
11539-013
0
5
10
15
20
25
30
–60 –40 –20 020 40 60 80 100
GRO UND CURRE NT (µA)
TEMPERATURE ( °C)
10mA
50mA
100mA
250mA
500mA
11539-014
0
5
10
15
25
20
30
1.2 1.6 2.0 2.4 2.8 3.2 3.6
GRO UND CURRE NT (µA)
V
IN
(V)
11539-015
–40°C
–5°C
+25°C
+55°C
+85°C
Rev. 0 | Page 7 of 12
ADP1190A Data Sheet
Figure 16. Shutdown Current vs. Temperature for Different Input Voltages
Figure 17. Typical Turn-On Delay Time, VIN = 1.8 V, 50 mA Load
Figure 18. Typical Turn-On Delay Time, VIN = 3.6 V, 100 mA Load
Figure 19. Enable Debounce Behavior, VIN = 1.8 V
Figure 20. Enable Debounce Behavior, VIN = 3.6 V
–100
0
100
200
300
400
500
600
700
SHUT DO WN CURRENT(nA)
–60 –40 –20 020 40 60 80 100
TEMPERATURE ( °C)
11539-016
1.4V
1.5V
1.6V
1.8V
2.0V
2.4V
2.8V
3.0V
3.3V
3.6V
CH1 2.0V
BW
CH3 1.0V
BW
CH2 1.0V
BW
M1.0ms A CH1 880mV
T 10.80%
1
2
3
T
T1
V
OUT
11539-017
EN
CH1 2.0V
BW
CH3 2.0V
BW
CH2 2.0V
BW
M1.0ms A CH2 1.08V
T 65.40%
1
2
3
T
T1
V
OUT
11539-018
EN
CH1 1.0V
BW
CH3 2.0V
BW
M2.0ms A CH1 40.0mV
T 10.40%
1
3
T
V
OUT
11539-019
EN
CH1 1.0V
BW
CH3 2.0V
BW
M2.0ms A CH1 1.08V
T 10.00%
1
3
T
V
OUT
11539-020
EN
Rev. 0 | Page 8 of 12
Data Sheet ADP1190A
THEORY OF OPERATION
The ADP1190A is a high-side load switch integrated with four
signal switches. The load switch and signal switches are turned
on by a low signal on the EN pin. When the device is disabled,
the T1 to T4 pins are actively pulled down with a nominal
resistance of 215 Ω. There is a 5 ms debounce counter on EN
for use with a mechanical EN switch. That is, hold EN low for
5 ms before the device is enabled. If EN transitions high before
this timeout, the counter is reset and starts a new 5 ms count.
The signal paths are N-channel MOSFETs with 3 Ω on resistance.
Break-before-make logic control ensures that the active pull-down
is off before the signal path is enabled.
The ADP1190A also has an internal charge pump that provides
a regulated voltage at the gates of the N-channel MOSFETs,
resulting in a more stable signal switch on resistance over
different input voltages and temperature.
Figure 21. Block Diagram with ESD Protection Devices
S1
S2
S3
S4
IN
5ms
DEBOUNCE
LOAD
SWITCH
ADP1190A
CHARGE
PUMP
EN
T1
T2
T3
T4
OUT
GND
ON
OFF
11539-021
Rev. 0 | Page 9 of 12
ADP1190A Data Sheet
Figure 22. Typical Application Diagram
Figure 23. Bandwidth Measurement Setup
S1
S2
S3
S4
IN
V
IN
= 1.4V TO 3.6V
5ms
DEBOUNCE
LOAD
SWITCH
MICROCONTROLLER
ADP1190A
CHARGE
PUMP
EN
T1
T2
T3
T4
OUT
I/O
I/O
RST
CLK
GND
VCC
GND
11539-022
CONNECTOR SIM CARD
50Ω
Sx
Tx
50Ω
VOUT
VS
NETWORK
ANALYZER
11539-023
Rev. 0 | Page 10 of 12
Data Sheet ADP1190A
OUTLINE DIMENSIONS
Figure 24. 12-Ball Wafer Level Chip Scale Package [WLCSP]
(CB-12-10)
Dimensions shown in millimeters
ORDERING GUIDE
Model1 Temperature Range Package Description Package Option Branding
ADP1190AACBZ-R7 −40°C to +85°C 12-Ball Wafer Level Chip Scale Package [WLCSP] CB-12-10 LNW
1 Z = RoHS Compliant Part.
A
B
C
D
0.560
0.500
0.440
1.24
1.20
1.16
1.64
1.60
1.56
1
2
3
BOTTO M VI EW
(BALL SI DE UP)
TOP VIEW
(BALL SI DE DOW N)
END VIEW
0.300
0.260
0.220
1.20
REF
0.80
REF
0.40
BSC
BALLA1
IDENTIFIER
02-22-2013-A
SEATING
PLANE 0.230
0.200
0.170
0.330
0.300
0.270
COPLANARITY
0.04
Rev. 0 | Page 11 of 12
ADP1190A Data Sheet
NOTES
©2013 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D11539-0-9/13(0)
Rev. 0 | Page 12 of 12