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Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ649 SWITCHING P-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SJ649 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE 2SJ649 Isolated TO-220 for solenoid, motor and lamp driver. FEATURES * Low on-state resistance: RDS(on)1 = 48 m MAX. (VGS = -10 V, ID = -10 A) RDS(on)2 = 75 m MAX. (VGS = -4.0 V, ID = -10 A) * Low input capacitance: Ciss = 1900 pF TYP. (VDS = -10 V, VGS = 0 V) * Built-in gate protection diode (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS -60 V Gate to Source Voltage (VDS = 0 V) VGSS m 20 V Drain Current (DC) (TC = 25C) ID(DC) m 20 A ID(pulse) m 70 A Total Power Dissipation (TC = 25C) PT 25 W Total Power Dissipation (TA = 25C) PT 2.0 W Channel Temperature Tch 150 C Drain Current (pulse) Note1 Storage Temperature Tstg -55 to +150 C Single Avalanche Current Note2 IAS -20 A Single Avalanche Energy Note2 EAS 40 mJ Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = -30 V, RG = 25 , VGS = -20 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16332EJ1V0DS00 (1st edition) Date Published May 2003 NS CP(K) Printed in Japan 2002 2SJ649 ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristics Symbol Test Condtions Zero Gate Voltage Drain Current IDSS VDS = -60 V, VGS = 0 V Gate Leakage Current IGSS VGS = Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance TYP. MAX. Unit -10 A m 10 A -2.5 V m 20 V, VDS = 0 V VGS(off) VDS = -10 V, ID = -1 mA -1.5 -2.0 | yfs | VDS = -10 V, ID = -10 A 10 20 RDS(on)1 VGS = -10 V, ID = -10 A 38 48 m RDS(on)2 VGS = -4.0 V, ID = -10 A 47 75 m Note Note MIN. S Input Capacitance Ciss VDS = -10 V 1900 pF Output Capacitance Coss VGS = 0 V 350 pF Reverse Transfer Capacitance Crss f = 1 MHz 140 pF Turn-on Delay Time td(on) VDD = -30 V, ID = -10 A 10 ns VGS = -10 V 10 ns RG = 0 73 ns 17 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = -48 V 38 nC Gate to Source Charge QGS VGS = -10 V 7 nC QGD ID = -20 A 10 nC Gate to Drain Charge Body Diode Forward Voltage Note VF(S-D) IF = 20 A, VGS = 0 V 0.95 V Reverse Recovery Time trr IF = 20 A, VGS = 0 V 49 ns Reverse Recovery Charge Qrr di/dt = 100 A/s 100 nC Note Pulsed: PW 350 s, Duty Cycle 2% TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 D.U.T. L RL PG 50 VDD VGS = -20 0 V RG PG. VGS (-) VGS Wave Form 0 VGS 10% 90% VDD VDS (-) - IAS 90% BVDSS VDS ID VGS (-) 0 VDS Wave Form VDD Starting Tch = 1 s Duty Cycle 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. PG. 2 IG = -2 mA RL 50 VDD 90% VDS Data Sheet D16332EJ1V0DS 10% 10% 0 td(on) tr ton td(off) tf toff 2SJ649 TYPICAL CHARACTERISTICS (TA = 25C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 30 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 25 20 15 10 5 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 TC - Case Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA ID(pulse) PW = 100 s ID(DC) 1 ms - 10 RDS(on) Limited (at VGS = -10 V) DC 10 ms -1 Single pulse TC = 25C - 0.1 - 0.1 -1 - 10 - 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - C/W ID - Drain Current - A - 100 Rth(ch-A) = 62.5C/W 10 Rth(ch-C) = 5.0C/W 1 0.1 Single pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D16332EJ1V0DS 3 2SJ649 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS -100 ID - Drain Current - A ID - Drain Current - A -80 VGS = -10 V -60 -4.5 V -40 -4.0 V -20 -10 -1 TA = -55C 25C 75C 125C -0.1 VDS = -10 V Pulsed Pulsed 0 -1 -3 -2 -2 -3 -4 -5 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = -10 V ID = -1 mA -3.0 -2.0 -1.0 -50 0 50 100 150 100 10 TA = 125C 75C 25C -55C 1 0.1 0.01 -0.01 -0.1 -1 VDS = -10 V Pulsed -10 -100 Tch - Channel Temperature - C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 120 Pulsed 100 80 VGS = -4.0 V -4.5 V -10 V 60 40 20 0 -0.1 -1 -10 ID - Drain Current - A -100 RDS(on) - Drain to Source On-state Resistance - m VGS(off) - Gate Cut-off Voltage - V RDS(on) - Drain to Source On-state Resistance - m 4 -5 -4 -4.0 0 -0.01 -1 | yfs | - Forward Transfer Admittance - S 0 80 70 60 50 ID = -10 A 40 30 20 10 Pulsed 0 Data Sheet D16332EJ1V0DS 0 -2 -4 -6 -8 - 10 - 12 - 14 - 16 - 18 - 20 VGS - Gate to Source Voltage - V 2SJ649 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 90 80 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 70 VGS = -4.0 V 60 50 -10 V 40 30 20 10 VGS = 0 V f = 1 MHz Ciss 1000 Coss 100 Crss Pulsed 0 -75 10 -0.1 -50 -25 0 25 50 75 -1 -100 -10 100 125 150 175 VDS - Drain to Source Voltage - V Tch - Channel Temperature - C SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS td(off) 100 tf td(on) 10 tr 1 -0.1 -10 -1 - 10 - 50 - 45 VGS - 40 - 35 - 30 -4 - 20 - 15 - 10 VDS 0 0 -100 0 5 1000 Pulsed trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 15 -4.0 V 0V -0.1 -0.5 -1.0 20 25 30 35 40 REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT VGS = -10 V 0 10 QG - Gate Charge - nC -10 -0.01 -2 ID = -20 A Pulsed -5 SOURCE TO DRAIN DIODE FORWARD VOLTAGE -1 -6 - 25 ID - Drain Current - A -100 -8 V DD = -48 V -30 V -12 V VGS - Gate to Source Voltage - V VDD = -30 V VGS = -10 V RG = 0 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 1000 di/dt = 100 A/s VGS = 0 V 100 10 -1.5 VF(S-D) - Source to Drain Voltage - V 1 0.1 1 10 100 IF - Diode Forward Current - A Data Sheet D16332EJ1V0DS 5 2SJ649 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 100 IAS1 = -20 A IAS2 = -10 A EAS2 = 100 mJ - 10 EAS1 = 40 mJ VDD = -30 V RG = 25 VGS = -20 0 V Starting Tch = 25C -1 10 VDD = -30 V RG = 25 VGS = -20 0 V IAS -20 A 80 60 40 20 0 100 1m L - Inductive Load - H 6 Energy Derating Factor - % IAS - Single Avalanche Current - A - 100 10 m 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - C Data Sheet D16332EJ1V0DS 2SJ649 PACKAGE DRAWING (Unit: mm) Isolated TO-220 (MP-45F) 3.2 0.2 4.5 0.2 2.7 0.2 13.5MIN. 4 0.2 12.0 0.2 3 0.1 15.0 0.3 10.0 0.3 1.3 0.2 2.5 0.1 0.65 0.1 1.5 0.2 2.54 0.7 0.1 2.54 1.Gate 2.Drain 3.Source 1 2 3 EQUIVALENT CIRCUIT Drain Remark Body Diode Gate The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Gate Protection Diode Source Data Sheet D16332EJ1V0DS 7 2SJ649 * The information in this document is current as of May, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1