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MOS FIELD EFFECT TRANSI STOR
2SJ649
SWITCHING
P-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16332EJ1V0DS00 (1st edition)
Date Published May 2003 NS CP(K)
Printed in Japan 2002
DESCRIPTION
The 2SJ649 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
•Low on-state resistance:
RDS(on)1 = 48 mΩ MAX. (VGS = –10 V, ID = –10 A)
RDS(on)2 = 75 mΩ MAX. (VGS = –4.0 V, ID = –10 A)
•Low input capacitance:
Ciss = 1900 pF TYP. (VDS = –10 V, VGS = 0 V)
•Built-in gate protection diode
ABS OLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS –60 V
Gate to Source Voltage (VDS = 0 V) VGSS m20 V
Drain Current (DC) (TC = 25°C) ID(DC) m20 A
Drain Current (pulse) Note1 ID(pulse) m70 A
Total Powe r Dissipation (TC = 25°C) PT25 W
Total Powe r Dissipation (TA = 25°C) PT2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current Note2 IAS –20 A
Single Avalanche Energy Note2 EAS 40 mJ
Notes 1. PW ≤ 10
µ
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω, VGS = –20 → 0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SJ649 Isolat ed TO-220
(Isolated TO-220)
Data Sheet D16332EJ1V0DS
2
2SJ649
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic s Symbol Test Condtions MIN. TYP. MAX. Unit
Zero Gate Volt age Drai n Current IDSS VDS = –60 V, V GS = 0 V –10
µ
A
Gate Leakage Current IGSS VGS = m20 V, VDS = 0 V m10
µ
A
Gate Cut-off Voltage VGS(off) VDS = –10 V, ID = –1 m A –1.5 –2.0 –2.5 V
Forward Transfer Adm i t tance Note | yfs |V
DS = –10 V, ID = –10 A 10 20 S
RDS(on)1 VGS = –10 V, ID = –10 A 38 48 mΩ
Drain to Sourc e On-state Res i stance Note
RDS(on)2 VGS = –4.0 V, I D = –10 A 47 75 mΩ
Input Capac i t ance Ciss VDS = –10 V 1900 pF
Output Capaci tance Coss VGS = 0 V 350 pF
Reverse Transf er Capacitanc e Crss f = 1 MHz 140 pF
Turn-on Delay Time td(on) VDD = –30 V, I D = –10 A 10 ns
Rise Time trVGS = –10 V 10 ns
Turn-off Del a y T i me td(off) RG = 0 Ω73 ns
Fall Time tf17 ns
Total Gate Charge QGVDD = –48 V 38 nC
Gate to Source Charge QGS VGS = –10 V 7 nC
Gate to Drain Charge QGD ID = –20 A 10 nC
Body Diode Forward Voltage Note VF(S-D) IF = 20 A, VGS = 0 V 0.95 V
Reverse Recovery T i me trr IF = 20 A, V GS = 0 V 49 ns
Reverse Recovery Charge Qrr di/dt = 100 A /
µ
s 100 nC
Note Pulsed: PW ≤ 350
µ
s, Duty Cycle ≤ 2%
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25 Ω
50 Ω
PG
L
VDD
VGS = –20 → 0 V
BVDSS
IAS
IDVDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG. RG
0
VGS
(−)
D.U.T.
RL
VDD
τ = 1
s
µ
Duty Cycle ≤ 1%
VGS
Wave Form
VDS
Wave Form
VGS
(−)
10% 90%
10%
0
VDS
(−)
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
VDS
0
t
on
t
off
PG. 50 Ω
D.U.T.
RL
VDD
IG = −2 mA
−
VGS
Data Sheet D16332EJ1V0DS 3
2SJ649
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATI NG F ACTOR OF FORWARD BI A S
SAFE OPERATING AREA TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
PT - Total Power Dissipation - W
0
5
10
15
20
25
30
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
ID - Drain Current - A
- 0.1
- 1
- 10
- 100
- 0.1 - 1 - 10 - 100
RDS(on) Limited
(at VGS = −10 V)
10 ms
DC
1 ms
PW = 100 µs
ID(pulse)
ID(DC)
Single pulse
TC = 25°C
VDS - Drain to Source Volt age - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resist ance - °C/W
0.01
0.1
1
10
100
Rth(ch-C) = 5.0°C/
W
Rth(ch-A) = 62.5°C/W
Single pulse
PW - Pul se Width - s
10
µ
100
µ
1 m 10 m 100 m 1 10 100 1000
Data Sheet D16332EJ1V0DS
4
2SJ649
DRAIN CURRE NT vs.
DRAIN TO S O URCE VOLTA G E FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
0–2–3–4
–80
–60
–40
–20
0–1
Pulsed
VGS = –10 V
–5
–4.0 V
–4.5 V
VDS - Drain to Source Volt age - V
ID - Drain Current - A
Pulsed
–1–2–3–4–5
VDS = –10 V
–10
–1
–0.1
–100
–0.01
TA = −55˚C
25˚C
75˚C
125˚C
VGS - Gate to Sourc e Voltage - V
GATE CUT-OFF VOLTAGE vs .
CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRE NT
VGS(off) - Gate Cut-off Volt age - V
V
DS
= –10 V
I
D
= –1 mA
–1.0
–2.0
–3.0
–50 0 50 100
0150
–4.0
Tch - Channel Temperat ure - °C
| yfs | - Forward Transfer Admitt ance - S
–0.01 –0.1 –1
10
100
–10 –100
0.1
1
Pulsed
V
DS
= –10 V
T
A
= 125˚C
75˚C
25˚C
−55˚C
0.01
ID - Drain Current - A
DRAIN TO S O URCE ON-STA T E RESISTA NCE vs.
DRAIN CURRE NT DRAIN TO SOURCE ON-ST ATE RE SIST ANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
–1–0.1
120
100
80
60
40
20
0–10 –100
Pulsed
V
GS
= –4.0 V
–4.5 V
–10 V
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
0
10
20
30
40
50
60
70
80
0 - 2 - 4 - 6 - 8 - 10 - 12 - 14 - 16 - 18 - 20
Pulsed
ID = −10 A
VGS - Gate to Sourc e Voltage - V
Data Sheet D16332EJ1V0DS 5
2SJ649
DRAIN TO S O URCE ON-STA T E RESISTA NCE vs.
CHANNEL TE MP ERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
0
10
20
30
40
50
60
70
80
90
-75 -50 -25 0 25 50 75 100 125 150 175
Pulsed
VGS = −4.0 V
−10 V
Tch - Channel Temperat ure - ° C
Ciss, Coss, C rss - Capacitance - pF
10
100
1000
10000
–0.1 –1–10
V
GS
= 0 V
f = 1 MHz
C
oss
C
rss
C
iss
–100
VDS - Drain to Source Volt age - V
SWITCHING CHARACTERISTICS DYNAMIC INPUT/ OUTPUT CHA RA CT ERIST ICS
td(on), tr, td(off), tf - Switching Time - ns
10
1–1–0.1
100
1000
–10 –100
tf
tr
td(on)
td(off)
VDD = –30 V
VGS = –10 V
RG = 0 Ω
ID - Drain Current - A
VDS - Drain to Source Volt age – V
0
- 5
- 10
- 15
- 20
- 25
- 30
- 35
- 40
- 45
- 50
0 5 10 15 20 25 30 35 400
- 2
- 4
- 6
- 8
- 10
ID = −20 A
Pulsed
VDS
VGS
VDD = −48 V
−30 V
−12 V
QG - Gate Charge - nC
VGS - Gate to Sourc e Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE REVE RS E RECOVERY TI ME vs.
DIODE FO RWARD CURRENT
IF - Diode Forward Current - A
–1.0
0–1.5
–0.5
Pulsed
–0.01
–0.1
–1
–10
–100
0 V
V
GS
= –10 V
–4.0 V
VF(S-D) - Source to Drain Volt age - V
trr - Reverse Recovery Time - ns
di/dt = 100 A/ s
VGS = 0 V
10.1
10
1 10 100
1000
100
µ
IF - Diode Forward Current - A
Data Sheet D16332EJ1V0DS
6
2SJ649
SINGLE AVALANCHE CURRENT vs.
INDUCTIV E LOAD SINGLE A VALANCHE E NERGY
DERATI NG F ACTOR
IAS - Single Avalanche Current - A
- 1
- 10
- 100
VDD = −30 V
RG = 25 Ω
VGS = -20 → 0 V
Starting Tch = 25°C
EAS2 = 100 mJ
EAS1 = 40 mJ
IAS1 = −20 A
IAS2 = −10 A
L - Induct i ve Load - H
Energy Derating Fac tor - %
0
20
40
60
80
100
25 50 75 100 125 150
VDD = −30 V
RG = 25 Ω
VGS = −20 → 0 V
IAS ≤ −20 A
Starti ng T ch - Starting Channel Temperature - ° C
10
µ
100
µ
1 m 10 m
Data Sheet D16332EJ1V0DS 7
2SJ649
PACKAGE DRAWING (Unit: mm)
Isolated TO-220 (MP-45F)
10.0 ± 0.3 3.2 ± 0.2
φ
4.5 ± 0.2
2.7 ± 0.2
2.5 ± 0.1
0.65 ± 0.11.5 ± 0.2
2.54
1.3 ± 0.2
2.54
0.7 ± 0.1
4 ± 0.2
15.0 ± 0.3
12.0 ± 0.2
3 ± 0.1
123
1.Gate
2.Drain
3.Source
13.5
MIN.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
2SJ649
The information in this document is current as of May, 2003. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
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not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
•
•
•
•
•
•
M8E 02. 11-1
(1)
(2)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
"Standard":
"Special":
"Specific":
