NPN SILICON TRANSISTORS, EPITAXIAL PLANAR *2N 2221 A TRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX *2N 22 22 A f Compl. of 2N 2906, A - 2N 2907, A 2 Preferred device Dispositif recommand 30 V 2N 2221 - 2N 2222 40 V 2N 2221 A-2N 2222 A - Medium current switching Ic O8A Commutation a moyen courant - LF or BF small or large signal amplification Amplification BF ou HF petits ou grands signaux Ve EO { hoqe { 40-120 2N2221,A (150 mA) (100-300 2N 2222, A f {ro MHz min T 300 MHz min 2N2222A VcEsat { 1V max 2N 2221 A-2222 A (500 mA)! 1,6 V max 2N 2221-2N 2222 Dissipation Case TO-18 See outline drawing CB-6 on last pages Variation de dissipation Boitier Voir dessin cot CB-6 dernires pages Prot (Wan 15 Bottom view (2) Vue de dassous cCJe \ B ! t 05 1 \ 1 iTamplee) 4 I a PA alia ) Weight : 0,32 g Collector is connected to case 9 50 100130200 Vease C} (2) Masse Le collecteur est reli au boftier ABSOLUTE RATINGS (LIMITING VALUES) Tamb = +25 C {(Untess otherwise stated) VALEURS LIMITES ABSOLUES DUTILISATION am (Sauf indications contraires) 2N 2221 2N 2221 A 2N 2222 2N 2222 A Collector-base voltage Vv Tension collecteur-basa cBO 60 75 Vv Collector-emitter voltage Vv, Tension collecteur-metteur cEO 30 40 Vv Emitter-base voltage Vv Tension metteur-base EBO 5 6 Vv Collector current ! Courant collecteur Cc. 08 08 A T = 26C (1) 0,5 Power dissipation amb Prot 05 Ww Dissipation de puissance = . Ww Tease 25C (2) 1,8 1,8 Junction temperature 7 Temprature de jonction max qj +175 +175 c Storage temperature min T 65 65 C Temprature de stockage max stg +200 +200 C 75-50 1/6 THOMSON-CSF DIVISION SEMIGONOUCTEURS 1772N 2221, 2N 2221 A, 2N 2222, 2N 2222 A STATIC CHARACTERISTICS Tamb = 25C (Uniess otherwise stated) CARACTERISTIQUES STATIQUES (Saut indications contraires) Test conditions i Conditions de mesure Min. Typ. Max. Vop =50V 2N 2221 10 nA Ip =0 2N 2222 Veg =60V cB 2N 2221 Al = 10 nA Ip =0 2N 2222 A Collector-base cut-off current Voep =50V Courant rsiduel collecteur-base Ip =0 'cBo aN ee 10 pA Tamb = 150C Vag =60V cB = Al lp =0 2N 2221 10 pA TT. =150C 2N 2222 A amb Collector-emitter cut-off current Vpe = 3V loEX RN 2221 Al 10 nA Courant rsiduel collecteur-metteur VcE =60V ION 2222 Al Base cut-off current Vee =~3V ! N 2221 A Courant rsiduel de fa base Voce =60V BEX N 2222 Al 20 nA Emitter-base cut-off current Vep =3V I Courant rsiduel metteur-base le =0 EBO 10 nA 2N 2221 60 Vv = 2N 2222 Collector-base breakdown voltage lie = Vv Tension de claquage collecteur-base t Cc =10uA (BR)CBO 2N 2221 Al 5 Vv ZN 2222 Al 2N 2221 30 Vv _ 2N 2222 Collector-emitter breakdown voltage Ip = Vv * Tension de claquage collectaur-metteur I c =10mA (BR)CEO 2N 2221 A Vv 2N 2222 A 40 2N 2221 5 Vv 1. =0 2N 2222 Emitter-base breakdown voltage Cc ViBR)EBO Tension de claquage metteur-base Ie =10pA 2N 2221 A 6 V 2N 2222 A * Pulsed to =200ns 85 <1% impuisions 2/6 1782N 2221, 2N 2221 A, 2N 2222, 2N 2222 A STATIC CHARACTERISTICS CARACTERISTIQUES STATIQUES T =25C amb (Unless otherwise stated) {Sauf indications contraires} Test conditions A Conditions de mesure Min. Typ. Max. Vee = 10V 2N 2221,A 20 le =0,1mA 2N 2222,A 35 Veg = 10V hoe (AN 2221, 25 Io =imA 2N 2222,A| 50 Vog = 10V 2N 2221,A) 35 Io =10mA 2N 2222,A| 75 Voce =1 2N 2221,A| 20 Iq = 150 mA 2N 2222,A] 50 Static forward current transfer ratio Valeur statique du rapport de transfert = direct du courant Voce = 180. A 2N 2221,A, 40 120 = m * = =12N 2222,A 100 300 c ote 2N 2221 | 20 2N 2222 | 30 Veg = 10V Ip = 500 mA 2N 2221 Al 25 2N 2222 A) 40 Vee =10V CE Io =10mA hore 2N 2221 Al . T. =-55C 2N 2222 Al amb lo = 150 mA 2N 2221 04 v Ig =15mA 2N 2222 ' lo = 500 mA 2N 2221 16 Vv Ip =50mA * | 2N 2222 , Collector-emitter saturation voltage VeEsat Tension de i fi teu le = 150mA 2N 2221 Al 03 Vv Ig =15mA 2N 2222 Al " lo =500mA 2N 2221 Al 1 Vv Ip =50mA 2N 2222 Al Io = 150mA 2N 2221 13 . . ip = 15mA 2N 2222 ' Base-emitter saturation voltage Vv Tension de saturation base-metteur BEsat Iq = 500 mA 2N 2221 26 Ig =50mA 2N 2222 , * Pulsed impulsions ty = 200 us 6 <1% 3/6 1792N 2221, 2N 2221 A, 2N 2222, 2N 2222 A STATIC CHARACTERISTICS CARACTERISTIQUES STATIQUES Tamb = 25C (Unless otherwise stated) (Saut indications contraires} Test conditions Conditions de mesure Min. Typ. Max. t = 150 mA ic = 15 mA 2N 2221 A 0,6 1,2 V ; ; B 15m 2N 2222 A Base-emitter saturation voitage Vv * Tension de saturation bese-metteur _ BEsat Ig = 500mA 2N 2221 A 3 Vv lp =50mA 2N 2222 A DYNAMIC CHARACTERISTICS (for small signals) CARACTERISTIQUES DYNAMIQUES (pour petits signaux} Vee =10V | = 2N 2221 A) 30 160 c FimA 2N 2222 A) 50 300 f = 1 kHz Forward current transfer ratio hoy Rapport de transfert direct du courant e Veg = 10V Ip =10mA 2N 2221 Al 50 300 f =1kHz 2N 2222 A) 75 375 vce =10v 2N 2221 A} 1 35 2 c =tma 2N 2222 Al 2 8 f =1 kHz Input impedance h impdance dentre Ite Veg = 10V oe = 1ama 2N 2221 A) 0,2 1 coer 2N 2222 A) 0,25 1,25 ka f = 1 kHz " ' Ver =10V lon =1mA 2N 2221 A 5 4 f =1kHe 2N 2222 A 8 10 Reverse voltage transfer ratio h Repport de transfert inverse de la tension 12b Vog = 10V lg =10mA 2N 2221 A 2.5 104 fe =1kHe 2N 2222 A 4 Veg =10V oe na mA 2N 2221A| 3 15 Cea 222 Al 5 35 HS f =1kHz 2N 2 Output admittance hoe Admittance d sortie vce = 10 vA 2N 2221 Al 10 100 us c 7 2N 2222 Al f =1kHz 2 200 * Pulsed imputsions ty =200 us 6 <1% Al6 1802N 2221, 2N 2221 A, 2N 2222, 2N 2222 A (Unless otherwise stated} STATIC CHARACTERISTICS Tamb = 25C ass othe t CARACTERISTIQUES STATIQUES am {Sauf indications contraires} Test conditions i Conditions de mesure Min. Typ. Max. 2N 2221,A) 250 MH Transition frequen Veg = 20V 2N 2222 z transition frequency = Frquence de transition c _ 20 mA ny = 100 MHz 2N 2222 A) 300 MHz Veep =10V Output capacitance { cB = Co9b i2N 2221,A 8 pF Capacit de tie pact fe sortia t = 1 Mrz PAN 2222,A Input capacitance Veg = 06 Vv Crib 2N 2221 A Capacit dentre lc = 2N 2222 A 2 pF f = 1 MHz Veg =20V Feedback time constant \ cE =20mA fhaapl 2N 2221 A 150 ps Constante de temps de raction c = 31,8 MHz ~~ RN 2222 A Veg = 10V lq = 100 pA Noise figure = Facteur de bruit Re 1 kQ F 2N 2222 A 4 dB F =1kHz Af =1Hz SWITCHING CHARACTERISTICS T. b= 25C CARACTERISTIQUES DE COMMUTATION am Gate controiled delay time Retard & la croissance commande par la Vv =-05V ty 2N 2221 A 10 ns gachette Figure 1 BE ' 2N 2222 A Igy 15MA Rise time I 150 mA t 2N 2221 A 25 ns Temps de croissance Figure 1 r 2N 2222 Al Carrier storage time i2N 2221 Al Retard 4 ja dcroissance . l 150 mA t, ON 2222 Al 225 ns Figure 2 c ret gy PY 15MA Fatl time I =-15mA i2N 2221 A . B2 t Temps de dcroissance Figure 2 f 2N 2222 Al 60 ns 5/6 1812N 2221, 2N 2221 A, 2N 2222, 2N 2222 A SWITCHING TIMES TESTS CIRCUITS SCHEMAS DE MESURES DES TEMPS DE COMMUTATION Figure 1 0,1 pF @ . "_ Oscilloscope Generator Oscilloscope Gnrateur Z > 100 k2 2 = 502 C < 12 pF t. < 2ns t, < Sns t, & 200 ns +104V Pp [ 502 +30V 0 Figure 2 Generator Gnrateur = 100 jus Zz = 502 1N 916 <5ns +16,2V Oscilloscope Oscilloscope 3V Z 2 100k2 C < 12 pF t, < Sns 0 -13,8V _ 500 us 6/6 182