SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Cool MOS™ Power Transistor VDS @ Tjmax 650 V
RDS(on) 0.38 Ω
ID11 A
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dtrated
• High peak current capability
• Improved transconductance
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
PG-TO262PG-TO220FP PG-TO220
P-TO220-3-31
123
Marking
11N60C3
11N60C3
11N60C3
Type Package Ordering Code
SPP11N60C3 P
G-TO220
Q67040-S4395
SPI11N60C3 P
G-TO262
Q67042-S4403
SPA11N60C3 Q67040-S4408
Maximum Ratings
Parameter
Symbol Value Unit
SPA
Continuous drain current
TC = 25 °C
TC = 100 °C
I
D
11
7
11
1)
7
1)
A
Pulsed drain current,
t
p
limited by T
jmax
I
Dpuls
33 33 A
Avalanche energy, single pulse
I
D
=5.5A, V
DD
=50V
E
AS
340 340 mJ
Avalanche energy, repetitive
t
AR
limited by T
jmax2)
I
D
=11A, V
DD
=50V
E
AR
0.6 0.6
Avalanche current, repetitive
t
AR
limited by T
jmax
I
AR
11 11 A
Gate source voltage static V
GS
±20 ±20
V
Gate source voltage AC (f >1Hz) V
GS
±
30
±
30
Power dissipation,
TC = 25°C
P
tot
125 33 W
SPP_I
Operating and storage temperature
T
j,
T
stg
-55...+150 °C
Reverse diode dv/dt dv/dt 15 V/ns
7)
11N60C3
P
G-TO220FP Q67040-S4408
SPA11N60C3E8185
11N60C3
PG-TO220
Rev. 3.3
Page 1
2018-02-09
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C
dv/dt50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 1 K/W
Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.8
Thermal resistance, junction - ambient, leaded RthJA - - 62
Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
RthJA
-
-
-
35
62
-
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s 4)
Tsold - - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V
Drain-Source avalanche
breakdown voltage
V(BR)DS VGS=0V, ID=11A - 700 -
Gate threshold voltage VGS(th) ID=500µA, VGS=VDS 2.1 3 3.9
Zero gate voltage drain current IDSS VDS=600V, VGS=0V,
Tj=25°C
Tj=150°C
-
-
0.1
-
1
100
µA
Gate-source leakage current IGSS VGS=30V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=7A
Tj=25°C
Tj=150°C
-
-
0.34
0.92
0.38
-
Ω
Gate input resistance RGf=1MHz, open drain - 0.86 -
Rev. 3.3
Page 2
2018-02-09
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Transconductance gfs VDS≥2*ID*RDS(on)max,
ID=7A
- 8.3 - S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
- 1200 - pF
Output capacitance Coss - 390 -
Reverse transfer capacitance Crss - 30 -
Effective output capacitance,5)
energy related
Co(er) VGS=0V,
VDS=0V to 480V
- 45 -
Effective output capacitance,6)
time related
Co(tr) - 85 -
Turn-on delay time td(on) VDD=380V, VGS=0/10V,
ID=11A,
RG=6.8Ω
- 10 - ns
Rise time tr- 5 -
Turn-off delay time td(off) - 44 70
Fall time tf- 5 9
Gate Charge Characteristics
Gate to source charge Qgs VDD=480V, ID=11A - 5.5 - nC
Gate to drain charge Qgd - 22 -
Gate charge total QgVDD=480V, ID=11A,
VGS=0 to 10V
- 45 60
Gate plateau voltage V(plateau) VDD=480V, ID=11A - 5.5 - V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Soldering temperature for TO-263: 220°C, reflow
5Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
6Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
7ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
Rev. 3.3
Page 3
2018-02-09
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous
forward current
ISTC=25°C - - 11 A
Inverse diode direct current,
pulsed ISM - - 33
Inverse diode forward voltage VSD VGS=0V, IF=IS- 1 1.2 V
Reverse recovery time trr VR=480V, IF=IS ,
diF/dt=100A/µs
- 400 600 ns
Reverse recovery charge Qrr - 6 - µC
Peak reverse recovery current Irrm - 41 - A
Peak rate of fall of reverse
recovery current
dirr/dt Tj=25°C - 1200 - A/µs
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
SPA SPA
Rth1 0.015 0.15 K/W Cth1 0.0001878 0.0001878 Ws/K
Rth2 0.03 0.03 Cth2 0.0007106 0.0007106
Rth3 0.056 0.056 Cth3 0.000988 0.000988
Rth4 0.197 0.194 Cth4 0.002791 0.002791
Rth5 0.216 0.413 Cth5 0.007285 0.007401
Rth6 0.083 2.522 Cth6 0.063 0.412
SPP_I SPP_I
External Heatsink
TjTcase
Tamb
Cth1 Cth2
Rth1 Rth,n
Cth,n
Ptot (t)
Rev. 3.3
Page 4
2018-02-09
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
1 Power dissipation
Ptot = f(TC)
0 20 40 60 80 100 120 °C 160
TC
0
10
20
30
40
50
60
70
80
90
100
110
120
W
140
SPP11N60C3
Ptot
2 Power dissipation FullPAK
Ptot = f(TC)
0 20 40 60 80 100 120 °C 160
TC
0
5
10
15
20
25
W
35
Ptot
3 Safe operating area
ID= f ( VDS )
parameter : D = 0 , TC=25°C
10 010 110 210 3
V
VDS
-2
10
-1
10
0
10
1
10
2
10
A
ID
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
4 Safe operating area FullPAK
ID = f (VDS)
parameter: D = 0, TC = 25°C
10 010 110 210 3
V
VDS
-2
10
-1
10
0
10
1
10
2
10
A
ID
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
Rev. 3.3
Page 5
2018-02-09
2SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
5 Transient thermal impedance
ZthJC = f(tp)
parameter: D=tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -1
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
ZthJC
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
6 Transient thermal impedance FullPAK
ZthJC = f(tp)
parameter: D = tp/t
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
ZthJC
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
7 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp= 10 µs, VGS
0 3 6 9 12 15 18 21 V27
VDS
0
4
8
12
16
20
24
28
32
A
40
ID
4,5V
5V
5,5V
6V
6,5V
7V
20V
10V
8V
8 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: tp= 10 µs, VGS
0 5 10 15 V 25
VDS
0
2
4
6
8
10
12
14
16
18
A
22
ID
4V
4.5V
5V
5.5V
6V
20V
8V
7V
7.5V
Rev. 3.3
Page 6
2018-02-09
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
9 Typ. drain-source on resistance
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
0 2 4 6 8 10 12 14 16 A 20
ID
0.4
0.6
0.8
1
1.2
1.4
1.6
Ω
2
RDS(on)
4V 4.5V 5V 5.5V 6V
6.5V
8V
20V
10 Drain-source on-state resistance
RDS(on) = f(Tj)
parameter : ID = 7 A, VGS = 10 V
-60 -20 20 60 100 °C 180
Tj
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
Ω
2.1 SPP11N60C3
RDS(on)
typ
98%
11 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
0 2 4 6 8 10 12 V 15
VGS
0
4
8
12
16
20
24
28
32
A
40
ID
25°C
150°C
12 Typ. gate charge
VGS =f (QGate)
parameter: ID = 11 A pulsed
0 10 20 30 40 50 nC 70
QGate
0
2
4
6
8
10
12
V
16 SPP11N60C3
VGS
0,8 VDS max
DS max
V
0,2
Rev. 3.3
Page 7
2018-02-09
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
13 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp= 10 µs
0 0.4 0.8 1.2 1.6 2 2.4 V3
VSD
-1
10
0
10
1
10
2
10
A
SPP11N60C3
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
14 Typ. switching time
t = f(ID), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, RG=6.8Ω
0 2 4 6 8 A 12
ID
0
5
10
15
20
25
30
35
40
45
50
55
60
ns
70
t
tr
td(off)
td(on)
tf
15 Typ. switching time
t = f (RG), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, ID=11 A
0 10 20 30 40 50 Ω70
RG
0
50
100
150
200
250
ns
350
t
td(off)
td(on)
tr
tf
16 Typ. drain current slope
di/dt = f(RG), inductive load, Tj = 125°C
par.: VDS=380V, VGS=0/+13V, ID=11A
0 20 40 60 80 Ω120
RG
0
500
1000
1500
2000
A/µs
3000
di/dt
di/dt(on)
di/dt(off)
Rev. 3.3
Page 8
2018-02-09
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
17 Typ. drain source voltage slope
dv/dt = f(RG), inductive load, Tj = 125°C
par.: VDS=380V, VGS=0/+13V, ID=11A
0 10 20 30 40 50 Ω70
RG
10
20
30
40
50
60
70
80
90
100
110
120
V/ns
140
dv/dt
dv/dt(off)
dv/dt(on)
18 Typ. switching losses
E = f (ID), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, RG=6.8Ω
0 2 4 6 8 A 12
ID
0
0.005
0.01
0.015
0.02
0.025
0.03
mWs
0.04
E
Eon*
Eoff
*) Eon includes SPD06S60 diode
commutation losses
19 Typ. switching losses
E = f(RG), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, ID=11A
0 10 20 30 40 50 Ω70
RG
0
0.04
0.08
0.12
0.16
mWs
0.24
E
Eon*
Eoff
*) Eon includes SPD06S60 diode
commutation losses
20 Avalanche SOA
IAR = f (tAR)
par.: Tj≤ 150 °C
10 -3 10 -2 10 -1 10 010 110 210 4
µs
tAR
0
1
2
3
4
5
6
7
8
9
A
11
IAR
Tj(START)=125°C
Tj(START)=25°C
Rev. 3.3
Page 9
2018-02-09
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
21 Avalanche energy
EAS = f(Tj)
par.: ID = 5.5 A, VDD = 50 V
20 40 60 80 100 120 °C 160
Tj
0
50
100
150
200
250
mJ
350
EAS
23 Avalanche power losses
PAR = f (f )
parameter: EAR=0.6mJ
10 410 510 6
Hz
f
0
50
100
150
200
W
300
PAR
22 Drain-source breakdown voltage
V(BR)DSS = f(Tj)
-60 -20 20 60 100 °C 180
Tj
540
560
580
600
620
640
660
680
V
720
SPP11N60C3
V(BR)DSS
24 Typ. capacitances
C = f(VDS)
parameter: VGS=0V, f=1 MHz
0 100 200 300 400 V 600
VDS
0
10
1
10
2
10
3
10
4
10
pF
C
Ciss
Coss
Crss
Rev. 3.3
Page 10
2018-02-09
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
25 Typ. Coss stored energy
Eoss=f(VDS)
0 100 200 300 400 V 600
VDS
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
µJ
7.5
Eoss
Definition of diodes switching characteristics
Rev. 3.3
Page 11
2018-02-09
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Outline PGTO220 FullPAK
DIMENSIONS MIN. MAX.
A2
H
b
D
c
b2
E
e
L
Q
øP
L1
D1
A
A1
2.86
2.42
2.54
28.70
0.95
15.67
0.40
0.65
10.00
2.83
3.15
3.00
12.78
8.97
29.75
0.90
0.63
1.51
16.15
3.50
3.30
3.45
13.75
10.65
9.83
MILLIMETERS
4.50
2.34
4.90
2.85
b1 0.95 1.38
b4 0.65 1.51
b3 0.65 1.38 1
SCALE
Z8B00003319
REVISION
ISSUE DATE
EUROPEAN PROJECTION
07
27.01.2017
05mm
DOCUMENT NO.
5:1
2 3 4
1 2 3
Rev. 3.3
Page 12
2018-02-09
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
PG-TO-262-3-1 (I²-PAK)
Rev. 3.3
Page 13
2018-02-09
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
PG-TO-220-3-1, PG-TO-220-3-21
Rev. 3.3
Page 14
2018-02-09
600VCoolMOSªC3
SPx11N60C3
RevisionHistory
SPx11N60C3
Revision:2018-02-09,Rev.2.3
Previous Revision
Revision Date Subjects (major changes since last revision)
2018-02-09 Outline FullPAK update
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
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Publishedby
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automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
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3.3