N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9006
Issue 1
Page 1 of 3
2N6661M1A
• VDSS = 90V , ID = 1.0A, RDS(ON) = 4.0Ω
• Fast Switching
• Low Threshold Voltage (Logic Level)
• Low CISS
• Integral Source-Drain Body Diode
• Hermetic Metal TO-257AA Package
• High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VDS Drain – Source Voltage 90V
VGS Gate – Source Voltage ±20V
ID Continuous Drain Current TC = 25°C 1.0A
IDM Pulsed Drain Current
(1)
3.0A
PD Total Power Dissipation at TC ≤ 25°C 8.33W
De-rate TC > 25°C 66.7mW/°C
TJ Operating Temperature Range -55 to +150°C
Tstg Storage Temperature Range -65 to +150°C
THERMAL PROPERTIES
Symbols Parameters Max. Units
RθJC
Thermal Resistance, Junction To Case 15 °C/W
Notes
NotesNotes
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) Pulse Width ≤ 300us, δ ≤ 2%
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
2N6661M1A
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9006
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ. Max.
Units
BVDSS Drain-Source Breakdown
Voltage VGS = 0 ID = 1.0µA 90 V
VDS = VGS ID = 1.0mA 0.8 2.0
TC = 125°C 0.3
VGS(th) Gate Threshold Voltage
TC = -55°C 2.5
V
VGS = ±20V VDS = 0V ±100
IGSS Gate-Source Leakage Current
TC = 125°C ±500
nA
VDS = 72V VGS = 0 1.0
IDSS Zero Gate Voltage
Drain Current TC = 125°C 100
µA
ID(ON)
(2)
On-State Drain Current VDS = 10V VGS = 10V 1.5 A
VGS = 5V ID = 0.3A 5.3
VGS = 10V ID = 1.0A 4
RDS(on)
(2)
Static Drain-Source
On-State Resistance
TC = 125°C 7.5
Ω
VGS = 5V ID = 0.3A 1.6
VGS = 10V ID = 1.0A 4
VDS(on)
(2)
Static Drain-Source
On-State Voltage
TC = 125°C 7.5
V
gfs
(2)
Forward Transconductance VDS = 7.5V ID = 0.475A 170 mƱ
VSD
(2)
Body Diode Forward Voltage VGS = 0 IS = 0.86A 0.7 1.4 V
trr
(2)
Body Diode Reverse Recovery VGS = 0 IS = 1.0A 350 ns
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 50
Coss Output Capacitance VDS = 25V 40
Crss Reverse Transfer Capacitance f = 1.0MHz 10
pF
td(on) Turn-On Delay Time VDD = 25V 10
td(off) Turn-Off Delay Time ID = 1.0A RG = 50Ω 10
ns
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
2N6661M1A
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9006
Issue 1
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
1 2 3
0.89 (0.035)
1.14 (0.045)
10.41 (0.410)
10.67 (0.420)
3.56 (0.140)
3.81 (0.150)
4.83 (0.190)
5.08 (0.200)
10.41 (0.410)
10.92 (0.430)
13.38 (0.527)
13.64 (0.537)
16.38 (0.645)
16.89 (0.665)
0.64 (0.025)
0.89 (0.035)
3.05 (0.120)
BSC
2.54 (0.100)
BSC
Dia.
12.07 (0.500)
19.05 (0.750)
Dia.
TO
-
257AA
Pin 1 = Source Pin 2 = Gate Pin 3 = Drain Case = Isolated
