PD - 95305 IRF7433PbF HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. VDSS RDS(on) max ID -12V 24m@VGS = -4.5V 30m@VGS = -2.5V -8.7A 46m@VGS = -1.8V -6.3A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. -7.4A SO-8 Top View Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -12 -8.9 -7.1 -36 2.5 1.6 0.02 8 -55 to +150 V A W W W/C V C Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient Max. Units 50 C/W 1 10/12/04 IRF7433PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -12 --- --- -0.4 22 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.007 --- --- --- --- --- --- --- --- --- 20 4.5 4.0 8.8 8.2 272 175 1877 512 310 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, I D = -1mA 24 VGS = -4.5V, ID = -8.7A m VGS = -2.5V, ID = -7.4A 30 46 VGS = -1.8V, ID = -6.3A -0.9 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -8.7A -1.0 VDS = -9.6V, VGS = 0V A -25 VDS = -9.6V, VGS = 0V, TJ = 70C -100 nA VGS = -8V 100 VGS = 8V --- ID = -8.7A --- nC VDS = -6V --- VGS = -4.5V 13 V DD = -6V, VGS = -4.5V ns 12 ID = -1.0A 408 RD = 6 263 RG = 6 --- VGS = 0V --- pF VDS = -10V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units -2.5 -36 --- --- --- --- 36 28 -1.2 54 42 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V TJ = 25C, IF = -2.5A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square copper board, t < 10 sec. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF7433PbF 100 VGS -10.0V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V 100 VGS -10.0V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V 10 -1.2V 1 TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP 10 -1.2V 1 20s PULSE WIDTH Tj = 150C 20s PULSE WIDTH Tj = 25C 0.1 0.1 0.1 1 10 100 0.1 -VDS, Drain-to-Source Voltage (V) RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) TJ = 150 C 10 TJ = 25 C V DS= -10V 20s PULSE WIDTH 2.0 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 100 Fig 2. Typical Output Characteristics 100 1.5 10 -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 1.0 1 2.5 2.0 ID = -8.7A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7433PbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance(pF) 2800 2400 Coss = Cds + Cgd Ciss 2000 1600 1200 800 Coss 400 Crss -VGS , Gate-to-Source Voltage (V) 6 3200 10 4 3 2 1 0 100 0 5 15 20 25 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -IID , Drain Current (A) -ISD , Reverse Drain Current (A) 10 QG , Total Gate Charge (nC) -VDS, Drain-to-Source Voltage (V) 10 TJ = 150 C TJ = 25 C 1 100us 10 1ms 10ms 0.1 0.2 TC = 25 C TJ = 150 C Single Pulse V GS = 0 V 0.4 0.6 0.8 1.0 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 V DS=-9.6V V DS=-6V 5 0 1 ID = -8.7A 1.2 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7433PbF 9.0 VDS -ID , Drain Current (A) 7.5 VGS D.U.T. RG 6.0 RD - + V DD V GS 4.5 Pulse Width 1 s Duty Factor 0.1 % 3.0 Fig 10a. Switching Time Test Circuit 1.5 td(on) tr t d(off) tf VGS 0.0 25 50 75 100 125 TC , Case Temperature ( C) 150 10% 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 PDM 0.02 1 t1 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 ( RDS(on), Drain-to -Source On Resistance) 0.050 0.040 0.030 ID = -8.7A 0.020 0.010 0.0 2.0 4.0 6.0 8.0 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 10.0 ( ) RDS ( on ) , Drain-to-Source On Resistance IRF7433PbF 0.15 0.12 VGS = -1.8V 0.09 0.06 VGS = -2.5V 0.03 VGS = -4.5V 0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 -ID , Drain Current ( A ) Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG 10 V QGS QGD 12V .2F .3F D.U.T. +VDS VGS -3mA VG IG ID Current Sampling Resistors Charge Fig 14a. Basic Gate Charge Waveform 6 Fig 14b. Gate Charge Test Circuit www.irf.com IRF7433PbF 1.0 300 200 ID = -250A Power (W) -VGS(th) ( V ) 0.8 0.6 100 0.4 0.2 -75 -50 -25 0 25 50 75 100 TJ , Temperature ( C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 125 150 0 0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000 Time (sec) Fig 16. Typical Power Vs. Time 7 IRF7433PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) D DIM B 5 A A INCHES MAX MIN .0532 .0688 1.35 A1 .0040 6 8 7 6 5 1 2 3 4 H E 0.25 [.010] A e e1 8X b 0.10 0.25 .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC .025 BASIC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 A C 0.25 [.010] .0098 MAX 1.75 b e1 6X MILLIMET ERS MIN y 0.10 [.004] A1 8X L 8X c 7 C A B FOOT PRINT NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F 7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER 8 www.irf.com IRF7433PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04+ www.irf.com 9