IRF 620 a D84CN2.M 5 AMPERES 200, 150 VOLTS RDS(ON) = 0.8 2 POMMER MOS [FET FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology N-CHANNEL 5 to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance s : in most switching applications including: switching power . supplies, inverters, converters and solenoid/relay drivers. om ASE STYLE TO-220AB Also, the extended safe operating area with good linear 40411026) 119225) sooi4.5 transfer characteristics makes it well suited for many linear tr reas 17014. 52)| ote at 39 applications such as audio amplifiers and servo motors. PO 2 seph9 Ey 1 2456.22) L CASE Features f | "aenence Polysilicon gate Improved stability and reliability $5 68g, $5519.02) cot en e No secondary breakdown Excellent ruggedness ts clan e Ultra-fast switching Independent of temperature vena HP . . .600(12.7)MIN. @ Voltage controlled High transconductance TERM.2 fe) Low input capacitance Reduced drive requirement TERMS | fy 93310) 105(2.67) Lg 10702.72) e Excellent thermal stability Ease of paralleling oe ES i241) rm eenegh UNIT TYPE | TEAM.1TERM.2| TERMS TAB POWER MOS FET/10-220-A8] GATE }DRAIN{|SQURCE| DRAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF620/D86CN2 IRF621/D84CM2 UNITS Drain-Source Voltage Vpss 200 150 Volts Drain-Gate Voltage, Ras = 1MQ VpGR 200 150 Volts Continuous Drain Current @ To = 25C Ip 5 5 A @ Te = 100C 3 3 A Pulsed Drain Current IDM 20 20 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 40 40 Watts Derate Above 25C 3.2 3.2 Ww/C Operating and Storage Junction Temperature Range Ty, Tsta -55 to 150 -55 to 150 S thermal characteristics Thermal Resistance, Junction to Case Rasc 3.12 3.12 C/W Thermal Resistance, Junction to Ambient Rasa 80 80 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 193 electrical characteristics (Tc = 25C) (unless otherwise specified) CHARACTERISTIC [SYMBOL | MIN | TYP MAX UNIT off characteristics Drain-Source Breakdown Voitage IRF620/D84CN2 BVpss 200 _ _ Volts (Vas = OV, Ip = 250 WA) IRF621/D84DM2 150 Zero Gate Voltage Drain Current Ipss (Vps = Max Rating, Veg = OV, To = 25C) _ _ 250 uA (Vps = Max Rating, x 0.8, Vgg = OV, To = 125C) 1000 Oe eoovy Current loss _ _ | +500 nA on characteristics Gate Threshold Voltage To = 26C | Vas(tH) 2.0 _ 4.0 Volts (Vos = Vas, Ip = 250 wA) On-State Drain Current _ _ (V@g = 10V, Vpg = 10V) ID(ON) 5.0 A Static Drain-Source On-State Resistance _ (Vas = 10V, Ip = 2.5A) RDS(ON) 0.6 0.8 Ohms Forward Transconductance _ (Vpg = 10V, Ip = 2.5A) Ofs 1.2 1.8 mhos dynamic characteristics Input Capacitance Vas = 10V Ciss _ 385 600 pF Output Capacitance Vos = 25V Coss 80 300 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 15 80 pF switching characteristics* Turn-on Delay Time Vps = 90V ta(on) _ 15 _ ns Rise Time Ip = 2.5A, Veg = 15V tr 10 ns Turn-off Delay Time RGeEN = 800, Reg = 12.59. ta (off) _ 30 _ ns Fall Time (Res (EQuiv.) = 109) tt _ 10 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 5 A Pulsed Source Current Iso _ _ 20 A Diode Forward Voltage 1.0 1. (To = 25C, Vag = OV, Ig = 5A) Vsp 8 Volts Reverse Recovery Time ter _ 270 ns (Ig = 5A, dig/dt = 100A/usec, Tc = 125C) Qrar _ 1.5 uC *Pulse Test: Pulse width < 300 us, duty cycle = 2% 100 86 60 40 gq 20 w oa w10 3 8 => 6 5 4 i & 5S 2 o z <q 10 = 08 TION IN THIS AREA a ae MAY BE LIMITED BY Roston) 0. SINGLE To = 26C IRF621/D84CM2 re) 2 1 2 4 6 810 20 40 6080100 200 Vpg- DRAIN~SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 400 600 1000 194 24 CONDITIONS: 22 Rps(on) CONDITIONS: Ip = 2.5 A, Vgg = 10V V@s(tH) CONDITIONS: Ip = 250A, Vog = Vag Rosion} 2.0 1.8 1.6 14 1.2 1,0 0.8 0.6 Rosion) AND Vesti NORMALIZED a4 0.2 0 --40 0 40 120 Ty, JUNCTION TEMPERATURE eC) TYPICAL NORMALIZED Rogsion) AND Vasirn) VS. TEMP. 160