RECTRON USA
www.rectron.com
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N914B
RECTRON
1N914B SIGNAL DIODE
Absolute Maxi mum Rat ings (Ta=25°C)
Items S
y
mbol Ratings Unit
Reverse Voltage VR 75 V
Reverse Recovery
Time trr 4 ns
Power Dissipation
3.33mW/°C
(
25°C
)
P 500 mW
Forward Curr ent IF 300 mA
Junction Temp. Tj -65 to 175 °C
Storage Temp. Tstg -65 to 175 °C
Mechanical Dat a
Items Materials
Package DO-35
Case Hermetically sealed glass
Chip Glass P assivated
Dimensions (DO - 35)
DO-35
0.457
0.559
2.0
max.
4.2
max.
26 MIN
26 MIN
Dimension s in millimeters
DIA.
DIA.
Electrical Characteristi cs (Ta=25°C)
Ratings Symbol Ratings Unit
Minimum Br eakdown Voltage
IR= 5.0uA
IR= 100uA
BV 75
100
V
Peak Forward Surge Cur r ent PW= 1sec. IFsurge 0.5 A
Maximum Forward Voltage
IF= 100mA VF 1.0 V
Maximum Reverse Current
VR= 20V
VR= 75V
VR= 20V, Tj= 150°C
IR 0.025
5.0
50
uA
Maximum Junct ion Capacit ance
VR= 0, f= 1 MHz Cj 4pF
Maximum Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100Ωtrr 4ns
