High-Speed Power transistors 2N6702, 2N6703, 0} de Bpza7soa, oo7nuy & i 3875081 G E SOLID STATE OTE 17144 pi-3s-l 2N6704 File Number 1187 Silicon N-P-N TERMINAL DESIGNATIONS High-Current, VERSAWATT Transistors Switching Applications Features: = Fast switching speed at temperatures up to 125 c m Low Vce(sat) 1 = VERSAWATT plastic package TOP VIEW RCA-2N6702, 2N6703, and E c | td (FLANGED C) pee f 8 JEDEC TO-220AB 2N6704 epitaxial-base silicon n-p-n power transistors which feature fast switching speeds, low saturation voltages, and high safe-operating-area (SOA) ratings. They are specially designed for converters, in- verters, pulse-width-modulated regulators and a variety of power switching circuits. The 2N6702, 2N6703, and 2N6704 transistors are supplied In the JEDEG TO-220AB packages. (RCA VERSAWATT) plastic *Formerly RCA Dev. Type Nos. TAS164A, TA9164B, TA9164C, respectively. MAXIMUM RATINGS, Absolute-Maximum Values: 2N6702 2N6703 2N6704 140 160 180 Vv 90 110 130 v 7 Vv 5 5 4 A 7 A 10 A 5 A Teo up to 25C 50 Ww Tc above 26C ,.. Derate Linearly _ 0.4 w/c -65 to 150 C At distance = 1/8 In. (3.16 mm) from seating plane for 10s max. ... 235 C *In accordance with JEDEC registration data. 146 0686 G-09 - eee - =- wee =mgh pe Fj sa7soas OoOL7LYS & 3875081 GE SOLID STATE ote 17145 oD T~S83'/! High Speed Power Transistors 2N6702, 2N6703, 2N6704 ELECTRICAL CHARACTERISTICS, at Case Temperature Tc = 25C Unless Otherwise Specified TEST CONDITIONS LIMITS CHARAC- VOLTAGE | CURRENT TERISTIC Vdc Adc 2N6702 | 2N6703 | 2NG704 {UNITS Vcel VBE | ic Ig |Min.| Max.)Min.| Max.)Min. |Max. 140 }-1.5 100] -~}J-|d- *IIcEy 160 }-1.5 - - | - 7 100] - BA 180 |-1.5 _ -ji- | | 100 140 |-1.5 - 1y- -|-{- To = 128C 160 | -1.5 -}-4- 1]- | - 180 |-1.5 -~{-]-|[-|f- 1| mA *|lepo 7| 0 | 100} | 100] | 100 pA * 1 Vee isusib boi | o | 90 | [ita] | 130) - Vv 2 0,2a 30 | 30] - 30] *lhee 2 4a -|-]|-j]- | 20} - 2 5a 20 | 4 204 - - 4a ;04],- |] - -{- - 1.4 * |Vpe(sat) sa fos | | 1451 - | 15] - | - atoa|/-]-|]-|- }o7] * |Vog(sat) 5a }o05 }] | a8] | a8] - | - 7a1o7 | 1.5} - 15], - 1.5 Isib 20 2.5 1 - 1] - 1) - s * Iheel += 6MHz 10 05 10 40! 10} 40] 10) 40 fT 10 0.5 50 | 200] 50! 200| 50} 200 | MHz #1C, obo c' *= 0.1 MHz 10 50 } 150] 50] 150} 50] 150 | pF 4 04 /--[-4- - |- | 0.1 * d _ . td 41 5 los | | or] - | o1}- | - |p _4 4 04 | - -|[- | 40.25 r 5 05 | [0.25] {0.2514 - Bs 4 0.4e | - |J-f-d- 1 # ied _ ts 4) 5 jose] - | 1]-]{ 1]- |- 4 0.4e| - | - | - - |- | 05 * led _ z . * 41 5 Jose] |o5| | 05] - | - * | Resc 4 5 | 25|- ] 2s| | 25]cw * In accordance with JEDEC registration data. Vg value. 3 Pulsed: pulse duration = 300 ys, duty factor 2%. a Veo =70V, the 20 us b CAUTION: The sustaining voltage Voeglsus) MUST NOT e 'B, = ~IBy: be measured oma curve tracer. 147 0687 6-103875081 G E SOLID STATE OL DE O1E 17146 3875081 OOL?714b O i High-Speed Power Transistors 2N6702, 2N6703, 2N6704 DD: 7-3BB-)] 148 {CURVES MUST 8E 6) LINEARLY WITH INCREASE IN TEMPERATURE) < a oD rR b z WW a4 2 uo COLLECTOR CURRENT (I)-A CASE TEMPERATURE (Tc)s 100C FOR SINGLE NONREPETITIVE PULSE [PULSE OPERA Ie (MAX.) oc OISSIPATION~ LIM FOR SINGLE NONREP PULSE VcEo (MAX)=90V (2N6702} Veo (MAX.) = 110 Vi2N6703} Veo (Max }=130V(2N6704) 2 4 6 6 2 4 6 is} * 100 ; +s * 1000 COLLECTOR-TO-EMITTER VOLTAGE (Vog) V 9265-31848 Fig. 1 Maximum operating areas for all types (To =25 C). PULSE OPERATION A ey &% CEO (MAX) = 90 V Vego (MAX.)= I10 V (2N6703) Voeo (MAX.)=130 V(2N6704) {0 100 1000 COLLECTOR -TO-EMITTER VOLTAGE (Nog) Vv 92cs-31649 Fig. 2 Maximum operating areas for all types (To = 100 C). 0688 G-11 ceerneeenneenennrenser tae Serereuennene eersteG1 pe W 387508) OOL7L47 1 i ; 3875081 G E SOLID STATE DiE 17147 D e z iG & 3 3 a wD & < = wu 6 o 2 80 75 CASE 92cs-31837 Fig. 3 Dissipation and Is, derating curves for all types. 0.1 t COLLECTOR CURRENT {Ig]A sas-saram Fig. 5 Typical de beta characteristics for all types. ' a & 0 0.4 08 12 16 2 BASE-TO- EMITTER SATURATION VOLTAGE [Vp_leatf] g2Cs-s1aal Fig. 7 Typical base-to-emitter saturation voltage characteristic for all typas. 2N6702, 2N6703, 2N6704 4 oo 2 Pr 3 a - a a w TRANSIENT 10 Ol 1 ( PULSE WIOTH (tpls g2cs~sie36 Fig. 4 Typical thermal-response characteristic for all types. a a COLLECTOR CURRENT (Ie) -A - o 62 04 O06 O8 2 14 6 COLLECTOR-TO-EMITTER SATURATION VOLTAGE [Ycetson]-V 92CS~ 31840 Fig. 6 Typical collector-to-emitter saturation voltage characteristics for all types. TEMPERATURE (Tc } = 25C COLLECTOR - TO- EMITTER VOLTAGE FREQUENCY (f)*5MHz 2 CURRENT (I]-A gacs-3ie42 Fig. 8 Typical smali-signal forward-current transfer ratio characteristic for all types (f = 5 MHz). 149 0689 G-12 High-Speed Power | ariciersO1 Dey 3875081 G E& SOLID STATE High-Speed Power Transistors 3475081 OOL?L4S 3 O1E 17148 dp TSB 1! 2N6702, 2N6703, 2N6704 CASE TEMPERATURE (Tc) 25 l < + 9 E 8 @7 5 a6 5 6 5 g a4 a 2 3 2 1 2 4 6 8 10 12 COLLECTOR-TO-EMITTER VOLTAGE (Voe)-V 9205-31963 Fig. 9 Typical output characteristics for all types. asec +Ig/l0 ' Te, "Igo =70V, tp = 208 RI COLLECTOR CURRENT (Ig)-A gecs- 31945 Fig. 11 Typical saturated-switching-time charac- teristics as a function o rf collector current for all types (Tg = 125 ec). 20Vv 0 lel 20 ys MIN FREQ = 500 Hz 152,2W CASE TEMPERATURE (Tp)2 25C Ig *Ic/0.Ig,*lp, Yoct70V , 20 28 t ue44 3.4 #6 6 7 COLLECTOR CURRENT (Ig)}-A Fig. 10 Typical saturated-switching-time charac- teristics as a function of collector current for all types (To = 28C). INPUT CAPACITANCE (Cibo) pF OR OUTPUT CAPACITANCE (Cipd -DF 103 to 10? COLLECTOR-TO-BASE VOLTAGE (Vcg)V OR EMITTER-TO-BASE VOLTAGE (Vgg}V azcs- 31656 ' Fig. 12 Typical common-base input {(Cip of or output (Copo/ capacitance characteristic for all types. ADJ FOR Tai Vel Rc? 15-208, 10W NON IND Qi, @2 = 2N6354 I CURRENT Q3 = 2N3762 PROBE 04,05, Ig CURRENT Q6,Q7 = CA3725 QUAD PROBE TRANSISTOR ARRAY. THIS CONNECTION SHOULD BE MADE AS CLOSE AS POSSIBLE TO COLLECTOR OF TRANSISTOR UNDER TEST ' & & KELVIN SENSING 0 CONNECTION NOTE. BATTERY SYMBOLS Vcc, Var: Yaa: .VB(CLAMP) INDICATE RIGOROUSLY FILTERED VOLTAGE SOURCES AT THE CIRCUIT TERMINALS TO ACCOMODATE THE FAST ty AND ty TIMES AND HIGH CURRENTS PRESENT IN THE CIRCUIT veo = 92C6M- 31847 ADd. FOR Iga Fig. 13 Circuit for measuring switching times. _ a o3875081 GE SOLID STATE 0691 G- 14 0% de faa7soas oo172us 5 IT pie 17149 #2 OT7S3-1) High Speed Power Transistors 2N6702, 2N6703, 2N6704 tyansition = *- NOTE: TRANSITION TIME FROM 20% Ig, TO 90% Ig, MUST BE LESS THAN 0.6 ps. Fig. 14 Phase relationship between input and output currents showing reference points for specification of switching times. 151