1
MRF1004MBMOTOROLA RF DEVICE DATA
The RF Line
 
 
Designed for Class B and C common base amplifier applications in short and
long pulse TACAN, IFF, DME, and radar transmitters.
Guaranteed Performance @ 1090 MHz, 35 Vdc
Output Power = 4.0 Watts Peak
Minimum Gain = 10 dB
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Industry Standard Package
Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to
Metal Migration
Internal Input Matching for Broadband Operation
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 20 Vdc
Collector–Base Voltage VCBO 50 Vdc
Emitter–Base Voltage VEBO 3.5 Vdc
Collector Current — Continuous IC250 mAdc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°CPD7.0
40 Watts
mW/°C
Storage Temperature Range Tstg 65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (2) RθJC 25 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0) V(BR)CEO 20 Vdc
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0) V(BR)CES 50 Vdc
Collector–Base Breakdown Voltage
(IC = 5.0 mAdc, IE = 0) V(BR)CBO 50 Vdc
Emitter–Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0) V(BR)EBO 3.5 Vdc
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0) ICBO 0.5 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 75 mAdc, VCE = 5.0 Vdc) hFE 10 100
NOTES: (continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Order this document
by MRF1004MB/D

SEMICONDUCTOR TECHNICAL DATA

4.0 W, 9601215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
CASE 332A–03, STYLE 1
Motorola, Inc. 1998
(Replaces MRF1004MA/D)
REV 8
MRF1004MB
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 35 Vdc, IE = 0, f = 1.0 MHz) Cob 3.3 5.0 pF
FUNCTIONAL TESTS (Pulse Width = 10 µs, Duty Cycle = 1.0%)
Common–Base Amplifier Power Gain
(VCC = 35 Vdc, Pout = 4.0 W pk, f = 1090 MHz) GPB 10 11 dB
Collector Efficiency
(VCC = 35 Vdc, Pout = 4.0 W pk, f = 1090 MHz) η40 45 dB
Load Mismatch
(VCC = 35 Vdc, Pout = 4.0 W pk, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
ψNo Degradation in Power Output
Figure 1. 1090 MHz Test Circuit
C1 — 0.1 µF
C2, C4 — 220 pF Chip Capacitor
C3 — 20 µF, 50 V Electrolytic
L1, L2 — 3 T urns #18 AWG, 1/8 ID
Z1–Z6 Distributed Microstrip Elements, See Photomaster
Board Material — 0.031 Thick Glass Teflon
RF
INPUT RF
OUTPUT
C4
+
VCC = 35 Vdc
L1
D.U.T.
Z1
L2
Z2 Z3 Z4 Z5 Z6
C1 C2 C3 +
3
MRF1004MBMOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency
Figure 4. Output Power versus Supply Voltage Figure 5. Power Gain versus Frequency
Figure 6. Series Equivalent Input/Output Impedance
f
MHz Zin
Ohms ZOL* (Pin = 400 mW pk)
Ohms
960
1090
1215
5.0 + j17.5
10 + j23
16 + j29.5
23.5 – j26
18.5 – j25
15.5 – j23.5
ZOL* = Conjugate of the optimum load impedance into which the device
ZOL* = output operates at a given output power, voltage, and frequency.
ZOL* (Pout = 4.0 W pk)
Ohms
22.5 – j36
15 – j32.5
11 – j23
P , OUTPUT POWER (W pk)
out
150 Pin, INPUT POWER (mW pk)
6.5
1.215 GHz
VCC = 35 V
tP = 10
µ
s
D = 1%
5.5
4.5
3.5
2.5 250 350 450 550 650
P , OUTPUT POWER (W pk)
out
960
8
f, FREQUENCY (MHz)
1090 1215
Pin = 650 mW pk
400 mW pk
VCC = 35 V
tP = 10
µ
s
D = 1%
P , OUTPUT POWER (W pk)
out
VCC, SUPPLY VOLTAGE (V)
20 25 30 35
Pin = 400 mW pk
tP = 10
µ
s
D = 1%
f = 1090 MHz
7
6
5
4
5
4
3
GPB, POWER GAIN (dB)
960
16
f, FREQUENCY (MHz)
1090 1215
14
12
10
8
Pout = 4 W pk
VCC = 35 V
tP = 10
µ
s
D = 1%
+j50
+j100
+j150
+j250
+j500
j500
j250
j150
j100
j50
j25
j10
0
+j10
+j25
Zin
25 50 100 150 250 50010
1090 1215
ZOL* (Pout = 4 W pk)
1090
1215
1215
ZOL* (Pin = 650 mW pk)
1090
COORDINATES IN OHMS
1.09 GHz
f = 0.96 GHz
f = 960 MHz
f = 960 MHz
f = 960 MHz
MRF1004MB
4MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
Figure 7. Typical Long Pulse Performance
Pout = 4 W pk
VCC = 35 V
tP = 1 ms
D = 10%
f = 1090 MHz
5
MRF1004MBMOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 332A–03
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. BASE
2. EMITTER
3. BASE
4. COLLECTOR
K
F
D
SEATING
1
4
3
2
PLANE
HAJ
C
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.270 0.290 6.86 7.36
C0.115 0.135 2.93 3.42
D0.195 0.205 4.96 5.20
F0.095 0.105 2.42 2.66
H0.050 0.070 1.27 1.77
J0.003 0.007 0.08 0.17
K0.600 ––– 15.24 –––
MRF1004MB
6MOTOROLA RF DEVICE DATA
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MRF1004MB/D