Fast Avalanche Sinterglass Diode
BYM36A, BYM36B, BYM36C, BYM36D, BYM36E
Vishay Semiconductors
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 86012
108 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.7, 25-Aug-10
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
FEATURES
Glass passivated
Hermetically sealed package
Very low switching losses
Low reverse current
High reverse voltage
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
Switched mode power supplies
High-frequency inverter circuits
949588
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYM36A VR = 200 V; IFAV = 3 A SOD-64
BYM36B VR = 400 V; IFAV = 3 A SOD-64
BYM36C VR = 600 V; IFAV = 3 A SOD-64
BYM36D VR = 800 V; IFAV = 2.9 A SOD-64
BYM36E VR = 1000 V; IFAV = 2.9 A SOD-64
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive
peak reverse voltage See electrical characteristics
BYM36A VR = VRRM 200 V
BYM36B VR = VRRM 400 V
BYM36C VR = VRRM 600 V
BYM36D VR = VRRM 800 V
BYM36E VR = VRRM 1000 V
Peak forward surge current tp = 10 ms, half sine wave IFSM 65 A
Average forward current
BYM36A IFAV 3A
BYM36B IFAV 3A
BYM36C IFAV 3A
BYM36D IFAV 2.9 A
BYM36E IFAV 2.9 A
Non repetitive reverse
avalanche energy I(BR)R = 1 A, inductive load ER20 mJ
Junction and storage
temperature range Tj = Tstg - 55 to + 175 °C
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient Lead length l = 10 mm, TL = constant RthJA 25 K/W
On PC board with spacing 25 mm RthJA 70 K/W
BYM36A, BYM36B, BYM36C, BYM36D, BYM36E
Fast Avalanche Sinterglass Diode Vishay Semiconductors
Document Number: 86012 For technical questions within your region, please contact one of the following: www.vishay.com
Rev. 1.7, 25-Aug-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 109
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
IF = 3 A
BYM36A VF--1.6V
BYM36B VF--1.6V
BYM36C VF--1.6V
BYM36D VF- - 1.78 V
BYM36E VF- - 1.78 V
IF = 3 A, Tj= 175 °C
BYM36A VF- - 1.22 V
BYM36B VF- - 1.22 V
BYM36C VF- - 1.22 V
BYM36D VF- - 1.28 V
BYM36E VF- - 1.28 V
Reverse current VR = VRRM IR--5μA
VR = VRRM, Tj = 150 °C IR- - 100 μA
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A
BYM36A trr - - 100 ns
BYM36B trr - - 100 ns
BYM36C trr - - 100 ns
BYM36D trr - - 150 ns
BYM36E trr - - 150 ns
Reverse breakdown voltage IR = 100 μA
BYM36A V(BR)R 300 - - V
BYM36B V(BR)R 500 - - V
BYM36C V(BR)R 700 - - V
BYM36D V(BR)R 900 - - V
BYM36E V(BR)R 1100 - - V
0
100
500
200
300
400
600
0 40 80 120 160 200
Tj - Junction Temperature (°C)
959705
PR - Max. Reverse Power Dissipation (mW)
RthJA = 25 K/W
1000 V
800 V
600 V
400 V
200 V
RthJA = 70 K/W
959706
I
FAV
- Average Forward Current (A)
0 40 80 120 160 200
Tamb - Ambient Temperature (°C)
4
3
2
1
0
VR = VRRM
half sinewave
RthJA = 70 K/W
RthJA = 25 K/W
BYM36A, BYM36B, BYM36C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 86012
110 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.7, 25-Aug-10
BYM36A, BYM36B, BYM36C, BYM36D, BYM36E
Vishay Semiconductors Fast Avalanche Sinterglass Diode
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Reverse Current vs. Junction Temperature
Fig. 6 - Max. Forward Current vs. Forward Voltage
Fig. 7 - Diode Capacitance vs. Reverse Voltage
Fig. 5 - Max. Forward Current vs. Forward Voltage
959707
I
FAV
- Average Forward Current (A)
0 40 80 120 160 200
Tamb - Ambient Temperature (°C)
4
3
2
1
0
VR = VRRM
half sinewave
RthJA = 70 K/W
RthJA = 25 K/W
BYM36D, BYM36E
0.1
1
10
100
1000
0 40 80 120 160 200
Tj - Junction Temperature (°C)
959704
IR - Reverse Current (μA)
VR = VRRM
IF - Forward Current (A)
0.001
0.01
0.1
1
10
100
01234
VF - Forward Voltage (V)
959709
Tj = 25 °C
Tj = 175 °C
BYM36D, BYM36E
0
10
20
30
50
70
40
60
80
90
0.1 1 10 100
VR - Reverse Voltage (V)
16302
CD - Diode Capacitance (pF)
f = 1 MHz
IF - Forward Current (A)
0.001
0.01
0.1
1
10
100
01234
VF - Forward Voltage (V)
959708
Tj = 25 °C
Tj = 175 °C
BYM36A, BYM36B, BYM36C
BYM36A, BYM36B, BYM36C, BYM36D, BYM36E
Fast Avalanche Sinterglass Diode Vishay Semiconductors
Document Number: 86012 For technical questions within your region, please contact one of the following: www.vishay.com
Rev. 1.7, 25-Aug-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 111
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
Cathode Identification 4.3 (0.168) max.
1.35 (0.053) max.
4 (0.156) max.
Sintered Glass Case
SOD-64
26(1.014) min. 26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
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www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
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