Ol DEM 3875082 ooO172bA8 2 , 3875081 GE SOLID STATE Darlington Power Transistors OIE 17268 DT 33037 2N6666, 2N6667, 2N6668 10-Ampere P-N-P Darlington Power Transistors 40-60-80 Volts, 65 Watts Gain of 1000 at 3 A (2N6666}) Gain of 1000 at 5 A (2N6667, 2N6668) Features: Operates from IC without predriver Applications: = Power switching Audio amplifiers = Hammer drivers Series and shunt regulators The 2N6666, 2N6667 and 2N6668 are monolithic silicon p-n-p Darlington transistors designed for low- and medium- frequency power applications. The high gain of these devi- ces makes it possible for them to be driven directly from integrated circuits. They are complementary to the 2N6386, 2N6387 and 2N63884 These devices are supplied In the JEDEC TO-220AB (VER- SAWATT) plastic package, *Formerly RCA Dev. Nos, TA8204, TA8487 and TA8203, respactivaly. ATechnical data for 2N6386-2N6388 are given in RCA Bulletin File No. 610. c File Number 1069 TERMINAL DESIGNATIONS _o__,l (FLANGE) O TOP VIEW MAXIMUM RATINGS, Absolute-Maximum Values: L At distances 2 1/8 in. (3.17 mm) from casa for 10s max, casenscuanesaee *in accordanca with JEDEC registration data format (JS-6 RDF-4}, 270 _ 2N6666 -40 40 2N6667 -60 -60 60 -60 5 -10 -16 0.25 65 0.62 65 to +150 235 2N6668 -80 -80 80 80 -5 ~10 0,.25 $208-39969 JEDEC TO-220AB 820$-20863Al Fig. 1 Schematic diagram for all types. 0810 8-07 Ol Deg 3875081 OOL72b9 4 I ro aon ; a _ ; 3875081 G E SOLID STATE O1E 17269 0 77-3373) warnnygin rower Transistors , 2N6666, 2N6667, 2N6668 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25C Unless Otherwise Specified TEST CONDITIONS LIMITS CHARACTERISTIC] VOLTAGE] CURRENT SYMBOL Vide Ade 2N6668 2N6667 2N6668 [UNITS VcelVael Ic ip__| MIN.| MAX. [MIN] MAX.) MINT MAX, IcEO 80 o f/-|-1]-7- |- f- -60 0 -|- -~-|14]-] - ~40 0 ~{-1]f-] - - | - 80] 1.5 TT aT Pa "lIicev -60 11.5 - | - [-]-o3 }]- | - -40 115 - |-o3 | - | - - | - To = 125C 80 | 1.5 -~- |-T- = | -3 -60 | 1.5 -~|- -];]3i]-{ - ~40 | 1.5 ~ | -3.] - |] - - lEBO 5 | Oo - | -10 | - | -10 |] - |-10 | mA *| VcEolsus) 0.28 o {-40/ ~ |-6o} - |-so] - || vi (sus) Rae = 1002 ~0,28 ~40] - |-8o}] - j-s8o] - v Vcevisus? 15 |-0.28 40. |-so]| - |-80| 3 Ja 1000] 20,000} - | ~ | - ~ *lhee ~3 fa | ~ ]1000}20,000 |1000 | 20,000 ~3 ga 1oo | -|- |[- - -3 -108 - | - [too] ~ [100] - -3 ~34 - | -2.8 - _ -3 a -|- |-28 | - |-28 VBE -3 -8 -|f-as}-}]- |- |] - | =3 108 - |7= - |-45 | - |-45 -3a |-0.006a, - | -2 |- | a * 5* | -0.01a} - = - -2 - ~2 Vce lsat) ~a | 0.089} - | -3 f - | ~ | - | - v -103 | -o.1a | - - {[-]|-3 [- | -3 ga _ 4 = = = VF 108 ~| - [-|4 - 14 M hie f=1kHz 5 -1 1000} - |icool - fiooo| 2 {htel {= 1 MHz -5 -1 20 | - |20] - j2 | - I an nonrep, | ~20 32! - j-as2] - jae] - A Roc ~ | 192 | - | 1.92 | | 192 | cwW SPulsed: Pulse duration = 300 us, duty factor = 2%. *In accordance with JEDEC registration data format (JS-6 RDF-4), HOTE- CURRENT DERATING AT CONSTANT 3 ONLY TO THE DISSIPATION- VOLTAGE APPLE LEITEO PORTION AND THE Ie), -LIMITED PORTION OF MAXIMUM OPERATING AREA CURVE, 00 NOT DERATE THE SPECIFIED VALUE FOR Te MAX CURRENT AT SPECIFIED VOCTAGE PERCENTAGE OF MAKIMUM DISSIPATION AT Tp# 25C OR PERCENTAGE OF RATED nu ET A a so nr WO 125 16 CASE TEMPERATURE (Tc]*C g2es- . Fig, 2 Derating curve for all types. i 200 20696 RATIO (hEe) a w & z = = F - =z Go & 2, 3 a g 8 <0 =! ~10 COLLECTOR CURRENT (Ie) A ~100 S2Cs-zonenAe Fig. 3 Typical dc beta charactoristics for ail types. 271 O14 ef 3875081 oouve7o o &j 3875081 GE SOLID STATE eee OIE 17270 9 TBB-3) Darlington Power Transistors >N6666, 2NG6667, 2NG668 CASE TEMPERATURE (T,) # 25C (CURVES MUST BE DERATEO LINEARLY WITH INCREASE IN TEMPERATURE) COLLECTOR CURRENT {I)A Voeo (WAX) *-60V (2N6667) Veo (MAX.) -80 V (2N6688) -10 =60 =100 COLLECTOR = TO-EMITTER VOLTAGE (VoE} P8CR- S0ISE Fig. 4 Maximum operating areas for all types at Tg = 25C. CUARENT COLLECTOA-TO-EMITTER {Voel CASE TEMPERATURE (Tele COLLECTOR-TO-EMITTER VOLTAGE [ as BASE CURRENT (Ip}-- ma 3 SMALL- SIGNAL CURRENT GALN (hy) 3, . 0.001 x Se . FACQUENCY {1 }--uHy snen-aoeet Qo GASE-TO-EMITTER VOLTAGE (Vari-V sace-zoerw Fig. Typical small-signal gain Fig. 6 Typical input characteristics for all types. for all typas. 272 0812 B-09 ahi 1 ve 3a75081 0017271 2 , 3875081 G E SOLID STATE COLLECTOR CURRENT iTc}A GOLLECTOR= TO-EMITTER VOLTAGE {Ve pb sxes-toars Fig. 7 Typical output characteristics for ail typas. IgiMAX) PULSEOE 2N6866,7,.8) COLLECTOR CURRENT (Ig)A -0 60 "=100 COLLECTOR-TO-EMITTER VOLTAGE (Vcg}V i727 ob T+ BSB! varnngwn rower Transistors 2N6666, 2N6667, 2N6668 COLLECTOR-TO-EMITTER VOLTAGE ey COLLECTOR CURRENT (Ic)-A @ASE ~TO+EMITTER VOLTAGE (Vgrl-- 02s +E4007R) Fig. 8 Typical transfer characteristics for all types. CASE TEMPERATURE {Tc} 100C Hh ULSE OPERATION AO ' 9209-30103 Fig. 9 Maximum operating areas for ail types Tg = 100C. 273 OL DEM 3875081 o017272 4 I 3875081 G & SOLID STATE Darlington Power Transistors jE 17372 oT 383) 2N6666, 2N6667, 2N6668 COLLECTOR CURRENT [Tc h-A COLLECTON-TO- EMITTER SATURATION VOLTAGE [Vee (eat!) V v2es-20076 Fig. 10 Typical saturation characteristics for all types. COLLECTOR SUPPLY VOLTAGE (Wech# -204 Kei" ts2t/500,Tes25"C a fr) COLLECTOR CURRENT (Igl& a2c8-20060RI Fig. 12 Typical saturated switching-time characteristics for all types. 274 + Lo ye } Teg TIME a& Th 3 Te iNPUT . 1 WAVE FORM & E fon CONDITION e! | Sp ete pert Ltn ey | Lz |-20v the ee e2 arte fe tite ourPut & tye | iit ie] WAVE FORM TURN a3 ee AE 92CS$+19587 Fig. 11 Phase relationship between Input current and output current showing reference points for specification of switching times. OUTPUT TO OSCILLOSCOPE {TEKTRONIX MODEL cM No. $434 R EQUIVALENT) om - INPUT . GHRONETICS PULSE =TB, GENERATOR MODEL Ne. PG-3i, OF th EQUIVALENT 82 DEVICE UNDER TEST PULSE OURATION 20 ps POSITIVE VOLTAGE 20 wa NEGATIVE VOLTAGE REP, RATE #200 He * [gy ANO Igo ARE MEASURED WITH TEKTRONIX CURRENT PROBE P6OI9 AND TYPE 134 AMPLIFIER, OR EQUIVALENT 92C5- 204944A Fig, 13 Circuit used to measure saturated switching times. Rg *200 Re 0614 B-11