2SK971
Silicon N-Channel MOS FET
November 1996
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
123
TO-220AB
1. Gate
2. Drain
(Flange)
3. Source
D
G
S
2SK971
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID15 A
Drain peak current ID(pulse)*160 A
Body to drain diode reverse drain current IDR 15 A
Channel dissipation Pch*240 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
2SK971
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
voltage V(BR)DSS 60——V I
D
= 10 mA, VGS = 0
Gate to source breakdown
voltage V(BR)GSS ±20——V I
G
= ±100 µA, VDS = 0
Gate to source leak current IGSS ——±10 µAV
GS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS — — 250 µAV
DS = 50 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance RDS(on) — 0.055 0.065 ΩID = 8 A, VGS = 10 V *1
0.075 0.095 ΩID = 8 A, VGS = 4 V *1
Forward transfer admittance |yfs| 7 12 — S I D = 8 A, V DS = 10 V * 1
Input capacitance Ciss — 860 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 450 — pF f = 1 MHz
Reverse transfer capacitance Crss — 140 — pF
Turn-on delay time td(on) —10—nsI
D
= 8 A, VGS = 10 V,
Rise time tr—70—nsR
L
= 3.75 Ω
Turn-off delay time td(off) — 180 — ns
Fall time tf— 120 — ns
Body to drain diode forward
voltage VDF — 1.3 — V IF = 15 A, VGS = 0
Body to drain diode reverse
recovery time trr — 135 — ns IF = 15 A, VGS = 0,
diF/dt = 50 A/µs
Note 1. Pulse test
2SK971
4
50 1000 Case Temperature T
C
(°C) 150
20
Channel Dissipation Pch
(W)
40
60 Power vs. Temperature Derating
Maximum Safe Operation Area
Drain Current I
D
(A)
0.3 1.0 3
10
30
100
10
300
500
Drain to Source Voltage V
DS
(V)
0.1
100
3
30
0.5
1.0
100 µs
PW = 10 ms (1 Shot)
DC Operation (T
C
= 25°C)
Ta = 25°C
1 ms
10 µs
Operation in this area 
is limited by RDS (on)
Typical Output Characteristics
6
Drain to Source Voltage VDS (V)
842 10
Drain Current ID (A)
0
4
8
12
16
0
20
VGS = 2.5 V
Pulse Test
10 V
4 V
5 V 3.5 V
3.0 V
Typical Transfer Characteristics
3
Gate to Source Voltage V
GS
(V)
42105
4
8
12
16
20
0
Drain Current ID (A)
TC= 25°C
75°C
VDS = 10 V
Pulse Test
–25°C
2SK971
5
Drain to Source Saturation Voltage
V
DS (on)
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
6
Gate to Source Voltage V
GS
(V)
842010
0.8
1.2
1.6
2.0
0
0.4
Pulse Test
I
D
= 5 A
20 A
10 A
10
Drain Current I
D
(A)
2052 100
0.02
0.05
0.1
0.2
0.5
1
0.01
0.005 50
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
V
GS
= 4 V
10 V
Pulse Test
80
Case Temperature T
C
(°C)
120400
0.04
0.08
0.12
0.16
0.20
–40
0160
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
I
D
= 10 A
5 A
20 A
Pulse Test
V
GS
= 4 V
V
GS
= 10 V 10 A
5 A
Forward Transfer Admittance
vs. Drain Current
50
20
10
5
2
1.0
0.5
0.2 0.5 1.0 2520
Drain Current I
D
(A) 10
Forward Transfer Admittance yfs (S)
T
C
= 25°C
V
DS
= 10 V
Pulse Test –25°C
75°C
2SK971
6
1000
500
200
100
50
20
10
0.5 1.0 5 50
Reverse Drain Current I
DR
(A)
10
220
Body to Drain Diode Reverse
Recovery Time
Reverse Recovery Time t
rr
(ns)
di/dt = 50 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
30
10
Capacitance C (pF)
01020 50
Drain to Source Voltage V
DS
(V)
30
100
40
V
GS
= 0
f = 1MHz
Ciss
Coss
Crss
100
80
60
40
20
08 24
32
Gate Charge Qg (nc)
16
20
16
12
8
4
0
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
40
I
D
= 15 A
V
DS
V
GS
V
DD
= 50 V
10 V
25 V
V
DD
= 50 V
25 V
10 V
Switching Characteristics
Switching Time t (ns)
500
200
100
50
20
10
5
0.2 0.5 1.0 2520
Drain Current I
D
(A) 10
t
d (off)
t
f
t
r
t
d (on)
V
GS
= 10 V V
DD
= 30 V
PW = 2µs, duty < 1 %
•
•
2SK971
7
20
16
12
8
4
0 0.4 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
0.8
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
VGS = 0, – 5 V
Pulse Test
10 V
15 V
5 V
3
1.0
0.3
0.1
0.03
0.01
10 µ1 m 10 m 100 m
Pulse Width PW (s)
100 µ110
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γs (t)
θch–c (t) = γ
S
(t) · θch–c
θch–c = 3.13°C/W, T
C
= 25°C
P
DM
PW D = PW
T
T
T
C
= 25°C
D = 1
0.5
0.05
1 Shot Pulse
0.2
0.1
0.02
0.01
Vin Monitor
Vout Monitor
R
L
50 Ω
Vin = 10 V
D.U.T
.
V
DD
= 30 V
.
Switching Time Test Circuit
Vin 10 %
90 %
90 %
90 %
10 %
td (on) td (off)
trtf
Vout 10 %
Wavewforms
2SK971
8
Notice
When using this document, keep the following in mind:
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part of this document without Hitachi’s permission.
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any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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