DATA SH EET
Product data sheet
Supersedes data of 1997 Jun 19
1999 Apr 23
DISCRETE SEMICONDUCTORS
2PB709A
PNP general purpose transistor
db
ook, halfpage
M3D114
1999 Apr 23 2
NXP Semiconductors Product data sheet
PNP general purpose transistor 2PB709A
FEATURES
Low current (ma x. 10 0 mA)
Low voltage (max. 45 V).
APPLICATIONS
General purpose switc hing and amplification.
DESCRIPTION
PNP transistor in an SC-59 plastic package.
NPN complement: 2PB601A.
MARKING
PINNING
TYPE NUMBER MARKING CODE
2PB709AQ BQ
2PB709AR BR
2PB709AS BS
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SC- 59) and symbol.
handbook, halfpage
12
1
3
2
3
MAM322
Top view
LIMITING VALUES
In accordance with the A bsolute Maxi mum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed- circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter 45 V
VCEO collector-emitter voltage open base 45 V
VEBO emitter-base voltage open collector 6 V
ICcollector current (DC) 100 mA
ICM peak collector current 200 mA
IBM peak base current 100 mA
Ptot total power dissipation Tamb 25 °C; note 1 250 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
1999 Apr 23 3
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistor 2PB709A
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed- circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp 300 μs; δ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 45 V 10 nA
IE = 0; VCB = 45 V; Tj = 150 °C 5μA
IEBO emitter cut-off current IC = 0; VEB = 5 V 10 nA
hFE DC current gain IC = 2 mA; VCE = 10 V
2PB709AQ 160 260
2PB709AR 210 340
2PB709AS 290 460
VCEsat collector-emitter saturation
voltage IC = 100 mA; IB = 10 mA; note 1 500 mV
Cccollector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz 5pF
fTtransition freque ncy IC = 1 mA; VCE = 10 V; f = 100 MHz
2PB709AQ 60 MHz
2PB709AR 70 MHz
2PB709AS 80 MHz
1999 Apr 23 4
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistor 2PB709A
PACKAGE OUTLINE
UNIT A
1
b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.50
0.35 0.26
0.10 3.1
2.7 1.7
1.3 0.95
e
1.9 3.0
2.5 0.33
0.23 0.2
0.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2
SOT346 TO-236 SC-59
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0 1 2 mm
scale
A
1.3
1.0 0.1
0.013
c
X
12
3
Plastic surface mounted package; 3 leads SOT34
6
98-07-17
1999 Apr 23 5
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistor 2PB709A
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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does not give any representations or warranties,
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reserves the right to make changes to informa t ion
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratin gs only and
operation of the device at these or any other cond itions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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regulations. Export might require a prior authorization from
national author ities.
Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document d oes not form part o f an y quotation or cont ra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged
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Customer notification
This data sheet was changed to reflect the new company name NXP Semicon ductors. No change s were
made to the content, except for the legal definitions and disclaimer s.
Printed in The Netherlands 115002/00/04/pp6 Date of releas e: 1999 Apr 23 Document order number: 9397 750 05393