MOTOROLA SC CXSTRS/R FH moe pare se. 6367254. MOTOROLA | so <XSTRS/R F) MOTO a SENICONDUCTOR TECHNICAL DATA applications, VCEO (sus) = 45 Vde (Min) = 60 Vde (Min) = 80 Vde (Min) Compact TO-220 AB Package @ Collector-Emitter Saturation Voltage Vc = 0.8 Vde (Max) @ Ic = 2.0 Ade @ Collector-Emitter Sustaining Voltage COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS . designed for use in general purpose amplifier and switching BD533, BD534 BD535, BD536 BD537, BD538 High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ Ic = 250 mAdc TO-66 Leadform Also Available ordered with 66 suffix MAXIMUM RATINGS Ib 96D 8061 1 ee PNP BD534 BD536 BD538 NPN . BD533 BD535 BD537 DE De Weae7esu 080631 ? ee a, prea T BBB i 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 45, 60, 80 VOLTS 50 WATTS Tc, CASE TEMPERATURE (C) BD533 8D536 80537 Rating Symbol BDS34 BD536 8D538 Unit Collector-Emitter Voltage Vceo 45 60 80 Vde Collector-Base Voltage Vee 45 60 80 Vde Emitter-Base Voltage Veg | = 5.0 Vdc Collector Current - Continuous le _ 40 Adc Peak 8.0 __ Base Current Ip 10 ee Adc Total Device Dissipation Pp Watts @Tr = 25C 50 Derate above 25C 04 - wiec Operating and Storage Junction| TJ,Tstg | =. -65 to +150 > C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junctton to Case ReJc 2.6 ociw Thermal Resistance, Junction to Ambient Roa 70 ociW HOTES: - 1. DIMENSIONING AND TOUERANCING PEA ANSI FIGURE 1 -POWER DERATING YHLSM, 1582, 2. CONTROLLING DOMENSION: BRCH, 50 3. OM Z DEFINES A ZONE WHERE ALL 2007 AND NY LEAD IRREGULARITIES ARE ALLOWED. 2 a0 N z N = NM E 3 N STHE |: = FIN T. BASE a . 2 COUECTOR SB 2 N\ 4 EMITTER a 4. COLLECTOR 5 S10 SS oa 0 NN 20 40 80 100-120 = 80 CASE 2214-04 TO-220AB 3-345 MOTOROLA SC {XSTRS/R FI fb DE ffeae7254 cosonia 9 03657254 MOTOR C aaa - [ . OLA SC CXSTRS/R F) _.... 96D 80612 Dd __. | BD533, BD535, BD537 NPN :- -- ee ~ 33 / / - BD534, BD536, BD538 PNP / TS3S-a) | ELECTRICAL CHARACTERISTICS (Tc = 25 C unless otherwise noted) ' | fale L symbol | Mn | Mex. [ume OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage VceOlsus} Vde (Ig = 0.1 Ade, tg = 0) 60533, 8D534 45 BO536, BD536 60 BD537, BDS38 80 Collector Cutoff Currant icpo - mAde (Vgg = 45 Vae, Je = 0) 80533, 8D534 0.1 (Vog = 60 Vde, Ig = 0} 8D536,-B0536 0.1 (Vag 80 Vde, IE = 0) BD537, BO63S 0.1 Collector Cutoff Current Ices Adc , (Voge = 46 Vde, Veg = 0) 8D533, 8BDS34 100 (Vee = 60 Vde, Veg = 0) BDS535, BOS36 100 (Vge = 80 Vide, Veg = 0) BDS37, 80638 100 Emitter Cutoff Current lEBO mAde t (Vpg = 5.0 Vde, ic = 0) 1.0 | ON CHARACTERISTICS BC Current Gain hee lig = 10 mAde, VcE = 6 Vde) BDS533, 8D534 20 BD535, 8D536 20 8D537, BDS38 15 (Ig = 500 mAde, Veg = 2 Vde) 40 (Ig = 2 Ade, Vog = 2 Vael BD533, 8D534 25 - BD535, BDS36 25 8D537, BD&38 15 Caltector-Emitter Saturation Voltage VoElsat) Vde ! (Ig = 2.0 Ade, Ig = 0,2 Adc} 08 : Base-Emitter On Voltage VBE(on) Vde (ig = 2.0 Ade, Veg = 2.0 Vde) 1.5 DYNAMIC CHARACTERISTICS Current Gain ~ Bandwidth Product fT MHz (Ig = 250 mAde, Vog = 1 Vide, feast = 1 MHz) 2.0 1 pulse test = Pulse width <300 ps, Duty Cycle 2.0%. 7 er = Intel -feest - FIGURE 2 SWITCHING TIME EQUIVALENT CIRCUIT FIGURE 3 TURN-ON TIME TURN-ON PULSE ROX 4thV 1 Vin & + ---A- vin SCOPE zg i VeBioff) RK w i t = eu = APPROX of Ca <<Ceb = ; HIV | ty<7.0ns . bio<i<5001s 9 -4.0V : Vin- -- - A 13<15 08 ' wat 2 bei DUTY CYCLE 2.0% 003 0.05 007 01 03 05 07 10 30 TURN-OFF PULSE ic, COLLECTOR CURRENT (AMP) 3-346 = 1 1 4 1 ' t siete OVA | ge temeenenenneteerienertimtctnta iat vit MOTOROLA SC fXSTRS/R FT 4b pe uauz25y 0080613 0 i 6367254 MOTOROLA SC (XSTRS/RF) |. 960 80613 OD. BD533, BD535, BD537 NPN i Te BP e/ BD534, BD536, BD538 PNP TT 33-2] FIGURE 4 THERMAL RESPONSE Zasciny= et Rese Rese = 3.1289 C/A Max 0 CURVES APPLY FOR POWER PULSE TRAIN SHOWN 7 " | REAO TIME AT ty "2 Tytpk) ~ Te = Plok) Zescit} DUTY CYCLE, O = ty/tz 0.01 002 00s at 02 O 1 20 $0 10 20 50 100 200 500 OK t, TIME {ms} itt], TRANSIENT THERMAL RESISTANCE (NORMALIZED} FIGURE 5 ACTIVE REGION SAFE OPERATING AREA There are two limitations on the power handling abitity of a Y transistor: average junction temperature and second breakdown. 20 Safe operating area curves indicate I-Vcg limits of the transistor BELOW RATED Vceq that must be observed for reliable Speration: ie, the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T j{pk) = 150C; T is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided Tyipk} & 160C. Tyipk} may be calculated from the data in Figure 4, At high case temperatures, thermal limitations will reduce the power that can be handied to LIMITEO @ Ty < 180C THERMAL LIMIT @ Tg 25C Veg, COLLECTOR-EMITTER VOLTAGE (VOLTS) WIRE BD633, BOBS values less than the limitations imposed by second breakdown. 36 (See AN-415A). 6.0 10 20 Ic, COLLECTOR CURRENT (AMP} FIGURE 6 TURN-OFF TIME FIGURE 7 CAPACITANCE 300 1=tB2 =10 ty stg 8 ty 200 2 2590 T y= +25 tt@ Voc > 0 , TIME tes} CAPACITANCE (pF) 8 70 $0 30 01 0.2 0.5 . . O1 80203 O85 10 2030 $0 10 20 wag ic, COLLECTOR CURRENT (AMP) Vp, REVERSE VOLTAGE (VOLTS} 3-347 eee ee ST I MOTOROLA SC {XSTRS/R FI 6367254 MOTOROLA SC BD533, BD535, BD537 NPN BD534, BD536, BD538 PNP FIGURE 8 ~ OC CURRENT GAIN hee, OC CURRENT GAIN 7 0.03 (0.05 0.07 0.1 03 05 07 ic, COLLECTOR CURRENT {AMP} 10 FIGURE 10 "ON" VOLTAGES 08 loflg = 10 as VBE V, VOLTAGE (VOLTS) Vee tsar) Ic/lg * 10 0,003 ic, COLLECTOR CURRENT (AMPS) FIGURE 12 COLLECTOR CUT-OFF REGION =30V ic, COLLECTOR CURRENT (uA) Vee, SASE-EMITTER VOLTAGE (VOLTS) XSTRS/R F) 3.0 ab de Beaezesy cosonsy 2 _ 96D 80614 6 FIGURE 9 COLLECTOR SATURATION REGION Te Vce, COLLECOTR-EMITTER VOLTAGE (VOLTS) 10 Ig, CASE CURRENT (mA) FIGURE 11 TEMPERATURE COEFFICIENTS Ty = -65C TO +150C + Oy, TEMPERATURE COEFFICIENTS (mv/C) oA Ip, COLLECTOR CURRENT (AMP) FIGURE 13 EFFECTS OF BASE-EMITTER RESISTANCE Ss a =30V Ss a Ic=ICES S on =2x Ices 3 Ices VALUES FROM FIGUAE 12) s co) RQ . oa 40 60 80 Ty, JUNCTION TEMPERATURE (C) 100 120 140 160 Ree, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)