Parameter Max. Units
VDS Drain- Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.4
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -3.5 A
IDM Pulsed Drain Current -20
PD @TA = 25°C Power Dissipation 2.0
PD @TA = 70°C Power Dissipation 1.3
Linear Derating Factor 0.016 W/°C
EAS Single Pulse Avalanche Energy31 mJ
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
01/13/03
Parameter Max. Units
RθJA Maximum Junction-to-Ambient62.5 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
www.irf.com 1
Si3443DV
HEXFET® Power MOSFET
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
VDSS = -20V
RDS(on) = 0.065Ω
Description
lUltra Low On-Resistance
lP-Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
l-2.5V Rated
Top View
1
2
D
G
A
D
D
D
S
34
5
6
TSOP-6
PD- 93795B
Si3443DV
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.7A, VGS = 0V
trr Reverse Recovery Time ––– 51 77 ns TJ = 25°C, IF = -1.7A
Qrr Reverse Recovery Charge ––– 30 44 nC di/dt = -100A/µs
Source-Drain Ratings and Characteristics
A
-20



-2.0

S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.
Starting TJ = 25°C, L = 6.8mH
RG = 25Ω, IAS = -3.0A.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 – –– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– -0.005 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.034 0.065 VGS = -4.5V, ID = -4.4A
––– 0.053 0.090 ΩVGS = -2.7V, ID = -3.7A
––– 0.060 0.100 VGS = -2.5V, ID = -3.5A
VGS(th) Gate Threshold Voltage -0.60 ––– -1.2 V VDS = VGS, I D = -250µA
gfs Forward Transconductance ––– 12 ––– S VDS = -10V, ID = -4.4 A
––– ––– -1.0 µA VDS = -20V, VGS = 0V
––– ––– -5.0 VDS = -20V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 nA VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
QgTotal Gate Charge –– – 11 15 ID = -4.4A
Qgs Gate-to-Source Charge ––– 2.2 – –– nC VDS = -10V
Qgd Gate-to-Drain ("Miller") Charge ––– 2.9 – –– VGS = -4.5V
td(on) Turn-On Delay Time ––– 12 50 VDD = -10V, VGS = -4.5V
trRise Time ––– 33 60 ns ID = -1.0A
td(off) Turn-Off Delay Time ––– 70 1 00 RG = 6.0 Ω
tfFall Time ––– 72 100 RD = 10 Ω,
Ciss Input Capacitance ––– 1079 ––– VGS = 0V
Coss Output Capacitance ––– 220 ––– pF VDS = -10V
Crss Reverse Transfer Capacitance ––– 152 ––– ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
Si3443DV
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-4.5V
-5.6A
0.1
1
10
100
0.1 1 10 100
20µs PU LSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
-1.50V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.50V
0.1
1
10
100
0.1 1 10 100
20µs PU LSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
-1.50V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.50V
0.1
1
10
100
1.5 2.0 2.5 3.0 3.5
V = -15V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
Si3443DV
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
04812 16 20 24
0
3
6
9
12
15
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-4.5A
V =-10V
DS
0.1
1
10
100
0.0 0.4 0.8 1.2 1.6 2.0 2.4
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
1 10 100
0
400
800
1200
1600
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
Si3443DV
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. D u ty fa c to r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Durati on ( s ec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
25 50 75 100 125 150
0
20
40
60
80
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-1.3A
-2.4A
-3.0A
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
T , Case Temperature ( C )
-I , Drain Current (A)
°
C
D
Si3443DV
6www.irf.com
Package Outline
Part Marking Information
TSOP-6
TSOP-6
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www.irf.com 7
Tape & Reel Information
TSOP-6
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/03