fy, SGS-THOMSON YF, WCROELECTROMICS SMBYTO1 FAST RECOVERY RECTIFIER DIODES FEATURES as VERY LOW REVERSE RECOVERY TIME w VERY LOW SWITCHING LOSSES a LOW NOISE TURN-OFF SWITCHING a SURFACE MOUNT DEVICE DESCRIPTION Single high voltage rectifier ranging from 200V to SOD6 400 V suited for Switch Mode Power Supplies and Plasti other power converters. (Plastic) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IF(RMS) | RMS forward current 10 A lFfav) | Average forward current Te tore 1 A IFSM Non repetitive surge peak forward current tp=10ms 30 A . sinusoidal Tstg Storage and junction temperature range - 40 to+ 150) C Tj - 40 to+ 150] C . SMBYT01- Symbol Parameter Unit 200 300 400 VrRM | Repetitive peak reverse voitage 200 300 400 v THERMAL RESISTANCE Symbol Parameter Value Unit Rth (-l) | Junction-leads 25 C August 1993. Ed:1 1/4 Mi 792923? OOL0L7b 789 oe 425 SMBYTO01 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. | Typ. | Max. | Unit VF * Tj = 25C IF=1A 1.6 V Tj = 100C 1.4 IR | T)=26C Vr = VRAM 20 yA Tj = 100C 0.5 | mA Puise test : * tp = 380 ps, duty cycle <2 % to=5ms, duty cycle<2% RECOVERY CHARACTERISTICS Symbol Test Conditions Min. | Typ. | Max. | Unit trr Tj = 25C Ir = 0.5A irr = 0.25A 25 ns iIR=1A ir=1A dir/dt =-15A/us 60 Va = 30V TURN-OFF SWITCHING CHARACTERISTICS (Without serie inductance) Symbol Test Conditions Min. | Typ. | Max. | Unit tia Voc = 200V IF=1A Lp < 0.05uH 35 | 50 ns IRM Tj = 100C dle/dt = -50A/us 15 2 A To evaluate the conduction losses use the following equation : P= 1.1 x IF(avy) + 0.25 x IF(ams) Voltage (V) 200 300 400 Marking B2 B3 B4 Laser marking Logo indicates cathode 2/4 426 mM 792923? OOL0177 b15 SMBYT01 Fig.1 Low frequency power losses versus average current. Pp 1.8 6=0.1 <0. 6=05 =1 1.6 6 =0.05 $2 1.4 1.2 1.0 0.8 0.6 0.4 0.2 IF(avy(a) | S=teT ++ tp 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Fig.3 : Non repetitive surge peak forward current versus overload duration. 12 10 4 2 0 0.001 0.01 0.1 1 10 Fig.5 : Voltage drop versus forward current. (Maximum values) lFM(A) 0.01 0.1 1 0.0 10 20 mm 792923? 0060178 Ss) Fig.2 : Peak current versus form factor. 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig.4 : Relative variation of thermal impedance junction to lead versus pulse duration. ar Zth(i-c) (tp. 8) 0.1 0.01 0.001 0.01 0.1 1 10 Fig.6 Average current versus ambient temperature. (duty cycle : 0.5) IF(av)(A\ 2 (av)(A) Rth(j-a)=Rth(j-1) 1.0 = Rth(j-a)=75 OC/W 0.8 teom2Cu 0.6 aN \ 0.4- SM \ 0.2} NA Tamb(oC) NY 0 ; ! 5 20. 40. 60 80 100 120 140 160 3/4 427 SMBYT01 Fig.7 : Recovery time versus dl-/dt. te = Te tay) Ty = 100 C 80 % confidence i/dt (A/ps) 0.00 20 4 60 60 180 Fig.9 : Peak reverse current versus dIF/dt. (a) 2.5 .90 X confidence Ipe ia 21-1, = 400 C Ty = 25 C .6 4 40 102 Fig.11: Dynamic parameters versus junction temperature. % 300 Ip=ia dig/dt = -50 A/ps 250 va = 30 150 1, fee) 50 75 100 125 150 100 25 Fig.8 : Peak forward voltage versus dl/dt. wi 42 80 X confidence Ty = {00 C 40 8 5 4 2 dip/dt (A/ps) a 20 40 60 8D 160 Fig.10 : Recovery charge versus dIF/dt. (typical values) 4074 T, = 100C dip/dt tA/ps) i id 100 500 10-3 Fig.12 : Thermal resistance junction to ambient versus copper surface under each lead. 100 90 80 70 60 50 40 30 20 10 Printed clreuit : epoxy (e=35um) 0 Scu(em?) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 a me 792923? 0060179 498