© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 6 1Publication Order Number:
BC368/D
NPN − BC368; PNP − BC369
Amplifier Transistors
Voltage and Current are Negative for
PNP Transistors
Features
These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector Emitter Voltage VCEO 20 Vdc
CollectorEmitter Voltage VCES 25 Vdc
Emitter − Base Voltage VEBO 5.0 Vdc
Collector Current − Continuous IC1.0 Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 W
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg 55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
COLLECTOR
2
3
BASE
1
EMITTER
COLLECTOR
2
3
BASE
1
EMITTER
NPN PNP
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
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MARKING DIAGRAMS
BC368ZL1G TO−92
(Pb−Free) 2000 / Ammo Pack
BC369ZL1G TO−92
(Pb−Free) 2000 / Ammo Pack
BC368G TO−92
(Pb−Free) 5000 Units / Bulk
12312
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 14
BC36
8
AYWW G
G
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
BC
369
AYWW G
G
NPN − BC368; PNP − BC369
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 10 mA, IB = 0) V(BR)CEO 20 Vdc
CollectorBase Breakdown Voltage
(IC = 100 mA, IE = 0 ) V(BR)CBO 25 Vdc
EmitterBase Breakdown Voltage
(IE = 100 mA, IC = 0) V(BR)EBO 5.0 Vdc
Collector Cutoff Current
(VCB = 25 V, IE = 0)
(VCB = 25 V, IE = 0, TJ = 150°C)
ICBO
10
1.0 mAdc
mAdc
Emitter Cutoff Current
(VEB = 5.0 V, IC = 0) IEBO 10 mAdc
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
(VCE = 1.0 V, IC = 0.5 A) BC368, 369
(VCE = 1.0 V, IC = 1.0 A)
hFE 50
85
60
375
Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 20 MHz) fT65 MHz
Collector−Emitter Saturation Voltage
(IC = 1.0 A, IB = 100 mA) VCE(sat) 0.5 V
Base−Emitter On Voltage
(IC = 1.0 A, VCE = 1.0 V) VBE(on) 1.0 V
NPN − BC368; PNP − BC369
http://onsemi.com
3
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
160
40
0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Temperature Coefficient
−0.8
IC, COLLECTOR CURRENT (mA)
Figure 5. Current−Gain — Bandwidth Product
Cobo
Cibo
5.0
1.0
−2.4
−2.0
−1.2
VCE, COLLECTOR VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
VB , TEMPERATURE COEFFICIENT (mV/ C)°θC, CAPACITANCE (pF)
1.0
0.8
0.6
0.4
0.2
0
0.01 0.1 10 1001.0
1.0
0.8
0.6
0.4
0.2
0
1.0 10 1000100
10
2.0
TJ = 25°C
IC = 10 mA
TJ = 25°C
VBE(on) @ VCE = 1.0 V
VCE(sat) @ IC/IB = 10
qVB for VBE
Cibo
hFE, CURRENT GAIN
200
20
100010 50 100
100
20
VCE = 1.0 V
TJ = 25°C
70
50
200 500 0.02 0.05 0.2 0.5 2.0 5.0 20 50
50 mA
100 mA
250 mA
500 mA
1000 mA
2.0 5.0 20 50 200 500
−1.6
−2.8
1.0 10 10001002.0 5.0 20 50 200 500
120
80
15
3.0
20
4.0
25
5.0
TJ = 25°C
Cobo
300
70
30
IC, COLLECTOR CURRENT (mA)
Figure 6. Capacitance
10 20 50
200
100
100 200 500
fT, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)
50
1000
VCE = 10 V
TJ = 25°C
f = 20 MHz
VBE(sat) @ IC/IB = 10
NPN − BC368; PNP − BC369
http://onsemi.com
4
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 −−− 12.70 −−−
L0.250 −−− 6.35 −−−
N0.080 0.105 2.04 2.66
P−−− 0.100 −−− 2.54
R0.115 −−− 2.93 −−−
V0.135 −−− 3.43 −−−
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
RA
P
J
B
K
G
SECTION X−X
C
V
D
N
XX
SEATING
PLANE DIM MIN MAX
MILLIMETERS
A4.45 5.20
B4.32 5.33
C3.18 4.19
D0.40 0.54
G2.40 2.80
J0.39 0.50
K12.70 −−−
N2.04 2.66
P1.50 4.00
R2.93 −−−
V3.43 −−−
1
T
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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BC368/D
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