1C3D06060F Rev. B
C3D06060F
Silicon Carbide Schottky Diode
Z-Rec™ RectifieR (Full-Pak)
Features
• 600-VoltSchottkyRectier
• ZeroReverseRecoveryCurrent
• ZeroForwardRecoveryVoltage
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• ExtremelyFastSwitching
• PositiveTemperatureCoefcientonVF
• FullyIsolatedCase
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies
• PowerFactorCorrection
Package
TO-220-F2 
Maximum Ratings (TC=25˚Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
VRRM RepetitivePeakReverseVoltage 600 V
VRSM SurgePeakReverseVoltage 600 V
VDC DCBlockingVoltage 600 V
IFContinuousForwardCurrent
7
6
3
A
TC=25˚C
TC=58˚C
TC=135˚C
IFRM RepetitivePeakForwardSurgeCurrent 27
18 ATC=25˚C,tP =10ms,HalfSineWave,D=0.3
TC=110˚C,tP=10ms,HalfSineWave,D=0.3
IFSM Non-RepetitivePeakForwardSurgeCurrent 44
41 ATC=25˚C,tp=10mS,HalfSineWave,D=0.3
TC=110˚C,tp=10mS,HalfSineWave,D=0.3
IFSM Non-RepetitivePeakForwardSurgeCurrent 200 A TC=25˚C,tP = 10 µs,Pulse
Ptot PowerDissipation 17
7.4 WTC=25˚C
TC=110˚C
TJ,Tstg OperatingJunctionandStorageTemperature -55to
+175 ˚C
TO-220MountingTorque 1
8.8
Nm
lbf-in
M3Screw
6-32Screw
PIN1
PIN2 CASE
Part Number Package Marking
C3D06060F TO-220-F2 C3D06060
VRRM = 600 V
IF (TC=58˚C) = 6 A
Qc  = 16nC
2C3D06060F Rev. B
60
70
80
90
100
Reverse Current (uA)
Reverse Characteristics
0
10
20
30
40
50
0 200 400 600 800 1000 1200
I
R
Reverse Current (uA)
V
R
Reverse Voltage (V)
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForwardVoltage 1.6
1.9
1.8
2.4 VIF = 6 A TJ=25°C
IF = 6 A TJ=175°C
IRReverseCurrent 10
20
50
200 μAVR = 600 V TJ=25°C
VR = 600 V TJ=175°C
QCTotalCapacitiveCharge 16 nC
VR=600V,IF = 6A
di/dt=500A/μs
TJ=25°C
C TotalCapacitance
294
27
26
pF
VR=0V,TJ=25°C,f=1MHz
VR=200V,TJ=25˚C,f=1MHz
VR=400V,TJ=25˚C,f=1MHz
Note:
1. Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.
Thermal Characteristics
Symbol Parameter Typ. Unit
RθJC ThermalResistancefromJunctiontoCase 8.8 °C/W
Typical Performance
Figure1.ForwardCharacteristics Figure2.ReverseCharacteristics
100
90
80
70
60
50
40
30
20
10
0
020040060080010001200
VR Reverse Voltage (V)
IR Reverse Current (μA)
12
11
10
9
8
7
6
5
4
3
2
1
0
0.00.51.01.52.02.53.0
VF Forward Voltage (V)
IF Forward Current (A)
8
10
12
Forward Current (A)
Forward Characteristics
0
2
4
6
0 0.5 1 1.5 2 2.5 3
IF
Forward Current (A)
VFForward Voltage (V)
TJ = 25°C
TJ = 75°C
TJ = 125°C
TJ = 175°C
TJ = 25°C
TJ = 75°C
TJ = 125°C
TJ = 175°C
3C3D06060F Rev. B
8
10
12
14
16
18
20
Peak Forward Current (A)
C3D06060F Current Derating
0
2
4
6
8
10
12
14
16
18
20
25 50 75 100 125 150 175
I
F(PEAK)
Peak Forward Current (A)
Tc Case Temperature (°
°°
°C)
C3D06060F Current Derating
Figure3.CurrentDerating Figure4.Capacitancevs.ReverseVoltage
Figure5.TransientThermalImpedance
Typical Performance
20
18
16
14
12
10
8
6
4
2
0
25 5075100125150175
I
F(PEAK)
Peak Forward Current (A)
20%Duty*
30%Duty*
50%Duty*
70%Duty*
DC
T
C
Case Temperature (
°
C
)
*Frequency>1KHz
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.E-07 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Time (s)
Zth (°C/W)
350
300
250
200
150
100
50
0
1 10 100 1000
C Capacitance (pF)
V
R
Reverse Voltage (V)
200
C Capacitance (pF)
200
C Capacitance (pF)
1E
-
1
1E+0
1E+1
1E+2
Zth (°C/W)
1E-2
1E-1
1E+0
1E+1
1E+2
1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3
Zth (°C/W)
Time (s)
4C3D06060F Rev. B
20
18
16
14
12
10
8
6
4
2
0
Power Dissipation (W)
T
C
Case Temperature (
°
C
)
255075100125150175
Figure6.PowerDerating
Typical Performance
8.0
10.0
12.0
14.0
16.0
18.0
20.0
Power Dissipation (W)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
25 50 75 100 125 150 175
Power Dissipation (W)
T
c
Case Temperature (°C)
Package Dimensions
PackageTO-220-F2
PIN1
PIN2 CASE
POS Inches Millimeters
Min Max Min Max
A .177 .193 4.5 4.9
B .092 .108 2.34 2.74
C .248 .272 6.3 6.9
D .098 .114 2.5 2.9
E .390 .406 9.9 10.3
F .118 .134 3.0 3.4
G .122 .137 3.1 3.5
H .617 .633 15.67 16.07
L .039 .055 1.0 1.4
M .016 .031 0.4 0.8
N .185 .217 4.7 5.5
P 0 .154 0 3.9
S .476 .508 12.1 13.18
T .016 .031 0.4 0.8
NOTE:
1. Dimension L, M, T apply for Solder Dip
Finish
C
A
B
D
T
EF
G
H
L
M
N
S
P
5C3D06060F Rev. B
VT
RT
Diode Model CSD06060
Vf
T
= V
T
+ If*R
T
VT= 0.975 + (Tj * -1.0*10-3)
RT= 0.09 + (Tj * 0.51*10-3)
Recommended Solder Pad Layout
Part Number Package Marking
C3D06060F TO-220-F2 C3D06060
TO-220-2
Note: Tj = Diode Junction Temperature In Degrees Celsius
Diode Model
Note: Recommended soldering proles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
66 C3D06060F Rev. B
Copyright © 2013 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacdebrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrol
systems,airtrafccontrolsystems,orweaponssystems.
Notes
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Cree, Inc.:
C3D06060F