1N4448WS-V www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES * These diodes are also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the type designation LL4448, and the SOT-23 case with the type designation IMBD4448-V * Silicon epitaxial planar diode * Fast switching diodes * AEC-Q101 qualified * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: SOD-323 Weight: approx. 4.3 mg Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART 1N4448WS-V ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS 1N4448WS-V-GS18 or 1N4448WS-V-GS08 A3 Single diode Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 75 V VRRM 100 V f 50 Hz IF(AV) 150 mA t < 1 s and Tj = 25 C IFSM 350 mA Ptot 200 mW SYMBOL VALUE UNIT RthJA 650 K/W Tj 150 C Tstg - 65 to + 150 C Reverse voltage Repetitive peak reverse voltage Average rectified current half wave rectification with resistive load (1) Surge forward current Power dissipation (1) THERMAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Thermal resistance junction to ambient air (1) Junction temperature Storage temperature range Note (1) Valid provided that electrodes are kept at ambient temperature. Rev. 1.1, 27-Jul-12 Document Number: 81387 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4448WS-V www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER Forward voltage Leakage curent Diode capacitance TEST CONDITION SYMBOL MIN. IF = 5 mA VF 620 IF = 100 mA TYP. MAX. UNIT 720 mV VF 1000 mV VR = 20 V IR 25 nA VR = 75 V IR 5 A VR = 20 V, Tj = 150 C IR 50 A VF = VR = 0 V CD 4 pF Reverse recovery time IF = 10 mA, iR = 1 mA, VR = 6 V, RL = 100 trr 4 ns Rectification efficiency f = 100 MHz, VRF = 2 V 0.45 RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT 60 5 k 2 nF VRF = 2 V VO 17436 TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 103 104 Tj = 25 C 5 Tj = 100 C 102 10 Tj = 25 C 3 5 10 Rf () IF (mA) f = 1 kHz 2 1 2 102 5 2 10 10 -1 5 2 10- 2 0 1 VF (V) 18105 Fig. 1 - Forward Characteristics Rev. 1.1, 27-Jul-12 10-2 2 17438 10-1 1 10 102 IF (mA) Fig. 2 - Dynamic Forward Resistance vs. Forward Current Document Number: 81387 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4448WS-V www.vishay.com Vishay Semiconductors 250 Tj = 25 C f = 1 MHz 200 1.0 CD (VR) 150 100 CD (0 V) Ptot - Power Dissipation (mW) 1.1 0.9 0.8 50 0.7 0 0 50 100 150 0 200 2 4 6 Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 8 10 VR (V) 17440 Tamb - Ambient Temperature (C) 20324 Fig. 4 - Relative Capacitance vs. Reverse Voltage 104 5 2 103 IR (nA) 5 2 102 5 2 10 5 VR = 20 V 2 1 0 100 17441 200 Tj (C) Fig. 5 - Leakage Current vs. Junction Temperature 100 5 4 3 2 I IFRM (A) 1 T = 1/fP IFRM 10 5 4 3 2 n = tP/T tP n=0 t T 0.1 0.2 0.5 5 4 3 2 0.1 10-5 17442 2 5 10-4 2 5 10-3 2 5 10-2 2 5 10-1 2 5 1 2 5 10 tP (s) Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration Rev. 1.1, 27-Jul-12 Document Number: 81387 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4448WS-V www.vishay.com Vishay Semiconductors 0.1 (0.004) max. 0 to 8 0.15 (0.006) 0.10 (0.004) 0.2 (0.008) 0.8 (0.031) 1.15 (0.045) PACKAGE DIMENSIONS in millimeters (inches): SOD-323 0.40 (0.016) 0.25 (0.010) 1.95 (0.077) 1.60 (0.063) 2.50 (0.098) 1.1 (0.043) 2.85 (0.112) 1.5 (0.059) 0.40 (0.016) 0.20 (0.008) Cathode bar Foot print recommendation: Document no.:S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 5 - Date: 23.Sept.2009 17443 Rev. 1.1, 27-Jul-12 1.6 (0.063) 0.6 (0.024) 0.6 (0.024) 0.6 (0.024) Document Number: 81387 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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