2005. 7. 18 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC3202
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent hFE Linearity
: hFE(2)=25(Min.) at VCE=6V, IC=400mA.
Complementary to KTA1270.
MAXIMUM RATING (Ta=25 )
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
AJ
KG
H
FF
L
E
C
E
C
M
N
M
1.00N
1. EMITTER
2. COLLECTOR
3. BASE
+
_
0.30 +0.10
- 0.05
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFE(1) Classification 0:70 140, Y:120 240, GR:200~400
hFE(2) Classification 0:25Min., Y:40Min.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=35V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A
DC Current Gain
hFE(1) (Note) VCE=1V, IC=100mA 70 - 400
hFE(2) (Note) VCE=6V, IC=400mA 25 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Base-Emitter Voltage VBE VCE=1V, IC=100mA - 0.8 1.0 V
Transition Frequency fTVCE=6V, IC=20mA - 300 - MHz
Collector Output Capacitance Cob VCB=6V, IE=0, f=1MHz - 7.0 - pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 35 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC500 mA
Base Current IE-500 mA
Collector Power Dissipation PC625 mW
Junction Temperature Tj150
Storage Temperature Range Tstg -55 150
2005. 7. 18 2/2
KTC3202
Revision No : 0
