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FQA7N90M_F109 Rev. A
FQA7N90M_F109 900V N-Channel MOSFET
September 2007
QFET®
FQA7N90M_F109
900V N-Channel MOSFET
Features
• 7.0A, 900V, RDS(on) = 1.8Ω @VGS = 10 V
• Low gate charge ( typical 40 nC)
• Low Crss ( typical 17pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
Absolute Maximum Ratings
Thermal Characteristics
D
G
S
GSD
TO-3PN
FQA Series
Symbol Parameter FQA7N90M_F109 Units
VDSS Drain-Source Voltage 900 V
IDDrain Current - Continuous (TC = 25°C) 7.0 A
- Continuous (TC = 100°C) 4.4 A
IDM Drain Current - Pulsed (Note 1) 28 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 780 mJ
IAR Avalanche Current (Note 1) 6.4 A
EAR Repetitive Avalanche Energy (Note 1) 21 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns
PDPower Dissipation (TC = 25°C) 210 W
- Derate above 25°C 1.69 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter Typ Max Units
RθJC Thermal Resistance, Junction-to-Case -- 0.59 °C/W
RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W
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FQA7N90M_F109 Rev. A
FQA7N90M_F109 900V N-Channel MOSFET
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 30mH, IAS =7.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤7.0A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Device Marking Device Package Reel Size Tape Width Quantity
FQA7N90M FQA7N90M_F109 TO-3PN -- -- 30
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 900 -- -- V
∆BVDSS/
∆TJ
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.96 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 900 V, VGS = 0 V -- -- 10 µA
VDS = 720 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0--5.0V
RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.5 A -- 1.5 1.8 Ω
gFS Forward Transconductance VDS = 50 V, ID = 3.5 A (Note 4) -- 5.7 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1440 1880 pF
Coss Output Capacitance -- 140 185 pF
Crss Reverse Transfer Capacitance -- 17 23 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 450 V, ID = 7.0A,
RG = 25 Ω
(Note 4, 5)
-- 35 80 ns
trTurn-On Rise Time -- 80 170 ns
td(off) Turn-Off Delay Time -- 95 200 ns
tfTurn-Off Fall Time -- 55 120 ns
QgTotal Gate Charge VDS = 720 V, ID = 7.0A,
VGS = 10 V
(Note 4, 5)
-- 40 52 nC
Qgs Gate-Source Charge -- 8.5 -- nC
Qgd Gate-Drain Charge -- 20 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 6.4 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 25.6 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7.0 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 7.0 A,
dIF / dt = 100 A/µs (Note 4)
-- 400 -- ns
Qrr Reverse Recovery Charge -- 4.3 -- µC
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FQA7N90M_F109 Rev. A
FQA7N90M_F109 900V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
246810
10-1
100
101
150℃
25℃
-55℃
Notes :※
1. VDS = 50V
2. 250µ s Pulse Test
ID, Drain Current [A]
V
GS, Gate-Source Voltage [V]
10-1 100101
10-2
10-1
100
101
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Notes :※
1. 250µ s Pulse Test
2. TC
= 25℃
ID, Drain Current [A]
V
DS, Drain-Source Voltage [V]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10-1
100
101
150℃ Notes :※
1. VGS = 0V
2. 250µ s Pulse Test
25℃
IDR, Reverse Drain Current [A]
V
SD, Source-Drain voltage [V]
0 5 10 15 20
0
1
2
3
4
VGS = 20V
VGS = 10V
Note : T※J = 25℃
RDS(ON) [Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0 5 10 15 20 25 30 35 40 45
0
2
4
6
8
10
12
VDS = 450V
VDS = 180V
VDS = 720V
Note : I※D
= 7.0A
VGS, Gate-Source Voltage [V]
QG
, Total Gate Charge [nC]
10-1 100101
0
500
1000
1500
2000
2500
3000 C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
Not es :※
1. VGS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
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FQA7N90M_F109 Rev. A
FQA7N90M_F109 900V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Volt age Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :※
1. VGS = 10 V
2. ID
= 3.5 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :※
1. VGS = 0 V
2. ID
= 250 µ A
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [o
C]
25 50 75 100 125 150
0
2
4
6
8
ID, Drain Current [A]
TC, Case Temperature [ ]℃
100101102103
10-2
10-1
100
101
102
DC
10 ms
1 ms
100 µs
Operation in This Area
is Limited by R DS(on)
Notes :※
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
N o tes :※
1. Z θJC(t) = 0.59 /W Max.℃
2. D uty F ac tor, D =t1/t2
3. T JM - TC = PDM * ZθJC(t)
sin gle pu lse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC
(t), Thermal Response
t1, S quare W ave Pu lse D ura tion [sec]
t1
PDM
t2
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FQA7N90M_F109 Rev. A
FQA7N90M_F109 900V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6www.fairchildsemi.com
FQA7N90M_F109 Rev. A
FQA7N90M_F109 900V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
7www.fairchildsemi.com
FQA7N90M_F109 Rev. A
FQA7N90M_F109 900V N-Channel MOSFET
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
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FQA7N90M_F109 Rev. A
FQA7N90M_F109 900V N-Channel MOSFET
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not intended to be an exhaustive list of all such trademarks.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury to the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx®
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CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
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Global Power ResourceSM
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ISOPLANAR™
MegaBuck™
MICROCOUPLER™
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OPTOLOGIC®
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®
PDP-SPM™
Power220®
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POWEREDGE®
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PowerTrench®
Programmable Active Droop™
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
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µSerDes™
UHC®
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VCX™
®
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary First Production
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete Not In Production
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild Semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I31
