74HCT245 Octal 3-State Noninverting Bus Transceiver with LSTTL-Compatible Inputs High-Performance Silicon-Gate CMOS http://onsemi.com The 74HCT245 is identical in pinout to LS245. The device has TTL-Compatible Inputs. The HCT245 is a 3-state noninverting transceiver that is used for 2-way asynchronous communication between data buses. The device has an active-low Output Enable pin, which is used to place the I/O ports into high-impedance states. The Direction control determines whether data flows from A to B or from B to A. *Output Drive Capability: 15 LSTTL Loads *TTL/NMOS-Compatible Input Levels *Outputs Directly Interface to CMOS, NMOS, and TTL *Operating Voltage Range: 4.5 to 5.5 V *Low Input Current: 1.0 mA *High Noise Immunity Characteristic of CMOS Devices *In Compliance with the Requirements Defined by JEDEC Standard No. 7A *ESD Performance: HBM > 2000 V; Machine Model > 200 V *Chip Complexity: 308 FETs or 77 Equivalent Gates *This is a Pb-Free Device May, 2007 - Rev. 0 20 20 1 Features (c) Semiconductor Components Industries, LLC, 2007 MARKING DIAGRAMS 1 HCT 245 ALYWG G TSSOP-20 DT SUFFIX CASE 948E 1 HCT245 A L Y W G = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: 74HCT245/D 74HCT245 DIRECTION A1 A2 20 1 VCC OUTPUT ENABLE 19 2 18 3 A1 A2 A3 B1 A3 4 17 B2 A4 5 16 B3 A5 6 15 B4 A6 7 14 B5 A7 8 13 B6 A8 9 12 B7 10 11 B8 A DATA PORT A4 A5 A6 GND A7 A8 2 18 3 17 4 16 5 15 6 14 7 13 8 12 9 11 B1 B2 B3 B4 B5 B DATA PORT B6 B7 B8 1 DIRECTION 19 OUTPUT ENABLE PIN 10 = GND PIN 20 = VCC Figure 1. Pin Assignment Figure 2. Logic Diagram FUNCTION TABLE Control Inputs Output Enable Direction L L Data Transmitted from Bus B to Bus A L H Data Transmitted from Bus A to Bus B H X Buses Isolated (High-Impedance State) Operation X = don't care ORDERING INFORMATION Device 74HCT245DTR2G Package Shipping TSSOP-20* 2500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb-Free. http://onsemi.com 2 74HCT245 MAXIMUM RATINGS (Note 1) Symbol Parameter VCC DC Supply Voltage VIN DC Input Voltage VOUT DC Output Voltage (Note 2) Value Unit *0.5 to )7.0 V *0.5 to VCC )0.5 V *0.5 to VCC )0.5 V IIK DC Input Diode Current $20 mA IOK DC Output Diode Current $35 mA IOUT DC Output Sink Current $35 mA ICC DC Supply Current per Supply Pin $75 mA IGND DC Ground Current per Ground Pin $75 mA TSTG Storage Temperature Range *65 to )150 _C 260 _C TL Lead Temperature, 1 mm from Case for 10 Seconds TJ Junction Temperature Under Bias )150 _C qJA Thermal Resistance TSSOP 128 _C/W PD Power Dissipation in Still Air at 85_C TSSOP 450 mW MSL Moisture Sensitivity FR Flammability Rating VESD ILATCHUP Level 1 Oxygen Index: 30% to 35% UL 94 V-0 @ 0.125 in Human Body Model (Note 3) Machine Model (Note 4) u2000 u200 V Above VCC and Below GND at 85_C (Note 5) $300 mA ESD Withstand Voltage Latchup Performance Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm-by-1 inch, 20 ounce copper trace with no air flow. 2. IO absolute maximum rating must observed. 3. Tested to EIA/JESD22-A114-A. 4. Tested to EIA/JESD22-A115-A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol VCC Vin, Vout Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) TA Operating Temperature, All Package Types tr, tf Input Rise and Fall Time (Figure 3) VCC = 4.5 V http://onsemi.com 3 Min Max Unit 4.5 5.5 V 0 VCC V -55 +125 _C 0 500 ns 74HCT245 DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Condition Guaranteed Limit VCC (V) -55 to 25C 85C 125C Unit Symbol Parameter VIH Minimum High-Level Input Voltage Vout = 0.1V |Iout| 20mA 4.5 5.5 2.0 2.0 2.0 2.0 2.0 2.0 V VIL Maximum Low-Level Input Voltage Vout = VCC - 0.1V |Iout| 20mA 4.5 5.5 0.8 0.8 0.8 0.8 0.8 0.8 V VOH Minimum High-Level Output Voltage Vin = VIL |Iout| 20mA 4.5 5.5 4.4 5.4 4.4 5.4 4.4 5.4 V 4.5 3.98 3.84 3.70 4.5 5.5 0.1 0.1 0.1 0.1 0.1 0.1 4.5 0.26 0.33 0.40 5.5 0.1 1.0 1.0 mA 5.5 0.5 5.0 10 mA 5.5 4.0 40 40 mA |Iout| 4.0mA Vin = VIL VOL Maximum Low-Level Output Voltage Vin = VIH |Iout| 20mA |Iout| 4.0mA Vin = VIH Iin IOZ Maximum Input Leakage Current Maximum Three-State Leakage Current Vin = VCC or GND Output in High- Impedance State Vin = VIL or VIH Vout = VCC or GND ICC Maximum Quiescent Supply Current (per Package) Vin = VCC or GND Iout = 0mA DICC Additional Quiescent Supply Current Vin = 2.4V, Any One Input Vin = VCC or GND, Other Inputs Iout = 0mA 5.5 -55C 25 to 125C 2.9 2.4 V mA 6. Information on typical parametric values can be found in Chapter 2the ON Semiconductor High- Speed CMOS Data Book (DL129/D). 7. Total Supply Current = ICC + DICC. AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns) Guaranteed Limit VCC V -55 to 25_C v 85_C v 125_C Unit tPLH, tPHL Maximum Propagation Delay, A to B, B to A (Figures 1 and 3) 4.5 15 19 22 ns tPLZ, tPHZ Maximum Propagation Delay, Direction or Output Enable to A or B (Figures 2 and 4) 4.5 22 28 33 ns tPZL, tPZH Maximum Propagation Delay, Output Enable to A or B (Figures 2 and 4) 4.5 22 28 33 ns tTLH, tTHL Maximum Output Transition Time, Any Output (Figures 1 and 3) 4.5 12 15 18 ns - 10 10 10 pF Symbol Cin Parameter Maximum Input Capacitance (Pin 1 or Pin 19) Cout Maximum Three-State I/O Capacitance (I/O in High-Impedance State) 15 15 15 pF 8. For propagation delays with loads other than 50 pF, and information on typical parametric values, see the ON Semiconductor High- Speed CMOS Data Book (DL129/D). Typical @ 25C, VCC = 5.0 V 40 CPD Power Dissipation Capacitance (Per Transceiver Channel) (Note 9) pF 9. Used to determine the no-load dynamic power consumption: PD = CPD VCC2 f + I CC V CC . For load considerations, see the ON Semiconductor High- Speed CMOS Data Book (DL129/D). http://onsemi.com 4 74HCT245 3V DIR 1.5V GND 3V 3V A or B OE 1.5V GND B or A VOH 1.5V A or B VOL Figure 3. Switching Waveform HIGH IMPEDANCE 1.5V tPHZ VOL +0.3V VOH -0.3V 1.5V HIGH IMPEDANCE Figure 4. Switching Waveform TEST POINT TEST POINT OUTPUT OUTPUT CL* GND tPLZ tPZH A or B DEVICE UNDER TEST 1.5V tPZL tPHL tPLH 1.5V DEVICE UNDER TEST 1 kW CL* CONNECT TO VCC WHEN TESTING tPLZ AND tPZL. CONNECT TO GND WHEN TESTING tPHZ AND tPZH. *Includes all probe and jig capacitance *Includes all probe and jig capacitance Figure 5. Test Circuit Figure 6. Test Circuit http://onsemi.com 5 74HCT245 A1 2 18 A2 3 17 A3 A5 OUTPUT ENABLE B7 9 11 DIRECTION B6 8 12 A8 B5 7 13 A7 B4 6 14 A6 B3 5 15 A DATA PORT B2 4 16 A4 B1 1 19 Figure 7. Expanded Logic Diagram http://onsemi.com 6 B8 B DATA PORT 74HCT245 PACKAGE DIMENSIONS TSSOP-20 CASE 948E-02 ISSUE C 20X 0.15 (0.006) T U 2X K REF 0.10 (0.004) S L/2 20 M T U S V IIII IIII IIII S J J1 11 B -U- L PIN 1 IDENT SECTION N-N 0.25 (0.010) N 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. K K1 10 M 0.15 (0.006) T U S A -V- N DIM A B C D F G H J J1 K K1 L M F DETAIL E -W- C G D H DETAIL E 0.100 (0.004) -T- SEATING PLANE SOLDERING FOOTPRINT* 7.06 1 0.65 PITCH 16X 0.36 16X 1.26 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 6.40 6.60 4.30 4.50 --1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.27 0.37 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.252 0.260 0.169 0.177 --0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.011 0.015 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ 74HCT245 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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