74HCT245
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4
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
VCC
(V)
Guaranteed Limit
Symbol Parameter Condition -55 to 25°C≤85°C≤125°C Unit
VIH Minimum High-Level Input Voltage Vout = 0.1V
|Iout| ≤ 20mA
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
V
VIL Maximum Low-Level Input Voltage Vout = VCC - 0.1V
|Iout| ≤ 20mA
4.5
5.5
0.8
0.8
0.8
0.8
0.8
0.8
V
VOH Minimum High-Level Output
Voltage
Vin = VIL
|Iout| ≤ 20mA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
Vin = VIL |Iout| ≤ 4.0mA 4.5 3.98 3.84 3.70
VOL Maximum Low-Level Output
Voltage
Vin = VIH
|Iout| ≤ 20mA
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH |Iout| ≤ 4.0mA 4.5 0.26 0.33 0.40
Iin Maximum Input Leakage Current Vin = VCC or GND 5.5 ±0.1 ±1.0 ±1.0 mA
IOZ Maximum Three-State Leakage
Current
Output in High- Impedance State
Vin = VIL or VIH
Vout = VCC or GND
5.5 ±0.5 ±5.0 ±10 mA
ICC Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0mA
5.5 4.0 40 40 mA
DICC Additional Quiescent Supply
Current
Vin = 2.4V, Any One Input
Vin = VCC or GND, Other Inputs
Iout = 0mA5.5
≥ -55°C25 to 125°C
mA
2.9 2.4
6. Information on typical parametric values can be found in Chapter 2the ON Semiconductor High- Speed CMOS Data Book (DL129/D).
7. Total Supply Current = ICC + ΣDICC.
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Symbol Parameter
VCC
V
Guaranteed Limit
Unit
–55 to
25_Cv 85_Cv 125_C
tPLH,
tPHL
Maximum Propagation Delay,
A to B, B to A (Figures 1 and 3)
4.5 15 19 22 ns
tPLZ,
tPHZ
Maximum Propagation Delay,
Direction or Output Enable to A or B (Figures 2 and 4)
4.5 22 28 33 ns
tPZL,
tPZH
Maximum Propagation Delay,
Output Enable to A or B (Figures 2 and 4)
4.5 22 28 33 ns
tTLH,
tTHL
Maximum Output Transition Time,
Any Output (Figures 1 and 3)
4.5 12 15 18 ns
Cin Maximum Input Capacitance (Pin 1 or Pin 19) - 10 10 10 pF
Cout Maximum Three-State I/O Capacitance (I/O in High-Impedance State) - 15 15 15 pF
8. For propagation delays with loads other than 50 pF, and information on typical parametric values, see the ON Semiconductor High- Speed
CMOS Data Book (DL129/D).
CPD Power Dissipation Capacitance (Per Transceiver Channel) (Note 9)
Typical @ 25°C, VCC = 5.0 V
pF
40
9. Used to determine the no-load dynamic power consumption: PD = CPD V
CC2f + ICC V
CC. For load considerations, see the ON
Semiconductor High- Speed CMOS Data Book (DL129/D).