1165900
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TO-3
Internal Schematic Diagram
Absolute Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage (RBE = 10Ω) VCER 1000
V
Collector-Emitter Voltage (VBE = 0) VCES
Collector-Emitter Voltage (IB= 0) VCEO 450
Emitter-Base Voltage (IC = 0) VEBO 7
Collector Current IC15
A
Collector Peak Current ICM 30
Collector Peak Current Non Repetitive (tp<20µs) ICP 55
Base Current IB4
Base Peak Current IBM 20
Total Dissipation at TC= 25°C Ptot 175 W
Storage Temperature Tstg -65 to 200
°C
Maximum Operating Junction Temperature Tj200
Description:
The BUV48A are silicon Multiepitaxial Mesa NPN transistors mounted respectively in TO-3
fully isolated package. They are particulary intended for switching and industrial applications
from single and three-phase mains.
High power NPN silicon transistors.
Features:
•NPN transistor.
•High voltage capability.
•High current capability.
•Fast switching speed.
Applications:
Switch mode power supplies.
Flyback and forward single transistor low power converters.
For TO-3 Package
1165900
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Electrical Characteristics (Tcase = 25°C unless otherwise specified)
Parameter Test Conditions Symbol Minimum Maximum Unit
Collector Cut-off Current (VBE = 0) VCE = rated VCES
VCE = rated VCES, TC= 125°C ICES -200
2
µA
mA
Collector Cut-off Current (RBE = 10Ω)VCE = rated VCER
VCE = rated VCER, TC= 125°C ICER -500
4
µA
mA
Emitter Cut-off Current (IC= 0) VEB = 5V IEBO - 1 mA
Thermal Data
Maximum Thermal Resistance Junction-case Rthj-case 1 °C/W
Collector-Emitter Sustaining Voltage (IB= 0) IC= 200mA L = 25mH BUX48A VCEO (sus)* 450 -
V
Emitter-Base Voltage (IC= 0) IE = 50mA VEBO 7 30
Collector-Emitter Saturation Voltage IC= 8A IB= 1.6A BUX48A
IC= 12A IB= 2.4A VCE (sat)* -1.5
5
Base-Emitter Saturation Voltage IC= 8A IB= 1.6A BUX48A VBE (sat)* - 1.6
*Pulsed: Pulse Duration = 300µs, Duty Cycle ≤2%
Resistive Switching Times
Parameter Test Conditions Symbol Minimum Maximum Unit
Turn-on Time VCC = 150V IC= 8A BUX48A
IB1 = 1.6A ton - 1
µs
Storage Time VCC = 150V IC= 8A BUX48A
IB1 = -IB2 = 1.6A ts- 3
Fall Time VCC = 150V IC= 8A BUX48A
IB1 = -IB2 = 1.6A tf- 0.8
Inductive Switching Times
Parameter Test Conditions Symbol Minimum Typical Maximum Unit
Storage Time
VCC = 300V IC= 8A BUX48A
LB= 3µH
VBE = -5V IB1 = 1.6A
same conditions at TC= 125°C
ts- 3
5
µs
Fall Time
VCC = 300V IC= 8A BUX48A
LB= 3µH
VBE = -5V IB1 = 1.6A
same conditions at TC= 125°C
tf- 0.13
0.4
1165900
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http://www.newark.com
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Part Number Table
Description Part Number
Transistor, NPN, TO-3 BUX48A
TO-3 Mechanical Data
Dimensions Minimum Maximum
A11.00 (0.433) 13.10 (0.516)
B0.97 (0.038) 1.15 (0.045)
C1.50 (0.59) 1.65 (0.065)
D8.32 (0.327) 8.92 (0.351)
E19.00 (0.748) 20.00 (0.787)
G10.70 (0.421) 11.10 (0.437)
N16.50 (0.649) 17.20 (0.677)
P25.00 (0.984) 26.00 (1.023)
R4.00 (0.157) 4.09 (0.161)
U38.50 (1.515) 39.30 (1.547)
V30.00 (1.187) 30.30 (1.193)
Dimensions : Inches (Millimetres)
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