SUMMARY
V(BR)DSS = -30V: RDS(on) = 0.045 : ID= -7.5A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
·Low on-resistance
·Fast switching speed
·Low threshold
·Low gate drive
·SOT223 package
APPLICATIONS
·DC-DC converters
·Power management functions
·Relay and soleniod driving
·Motor control
DEVICE MARKING
·ZXMP
3A16
ZXMP3A16G
1
30V P-CHANNEL ENHANCEMENT MODE MOSFET
ISSUE 2 - JULY 2004
DEVICE REEL
SIZE TAPE
WIDTH QUANTITY
PER REEL
ZXMP3A16GTA 7” 12mm 1000 units
ZXMP3A16GTC 13” 12mm 4000 units
ORDERING INFORMATION
Top View
PINOUT
SOT223
ZXMP3A16G
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ISSUE 2 - JULY 2004
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS -30 V
Gate-Source Voltage VGS ⫾20 V
Continuous Drain Current (VGS= -10V; TA=25°C)(b)
(VGS= -10V; TA=70°C)(b)
(VGS= -10V; TA=25°C)(a)
ID-7.5
-6.0
-5.4
A
Pulsed Drain Current (c) IDM -24.9 A
Continuous Source Current (Body Diode) (b) IS-3.2 A
Pulsed Source Current (Body Diode)(c) ISM -24.9 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor PD2.0
16 W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor PD3.9
31 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ABSOLUTE MAXIMUM RATING
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) RθJA 62.5 °C/W
Junction to Ambient (b) RθJA 32.2 °C/W
THERMAL RESISTANCE
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
ZXMP3A16G
3
ISSUE 2 - JULY 2004
110
10m
100m
1
10
Single Pulse
Tamb=25°C
RDS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
-IDDrainCurrent (A)
-VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160
0.0
0.4
0.8
1.2
1.6
2.0
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70 Tamb=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
Tamb=25°C
Pulse Power Dissipation
Pulse Width (s)
MaximumPower (W)
TYPICAL CHARACTERISTICS
ZXMP3A16G
ISSUE 2 - JULY 2004
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS -30 V ID=-250µA, VGS=0V
Zero Gate Voltage Drain Current IDSS -1 ␮AV
DS=-30V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS=⫾20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) -1.0 V ID=-250␮A, VDS=V
GS
Static Drain-Source On-State Resistance (1) RDS(on) 0.045
0.070 ⍀
⍀VGS=-10V, ID=-4.2A
VGS=-4.5V, ID=-3.4A
Forward Transconductance (1)(3) gfs 9.2 S VDS=-15V,ID=-4.2A
DYNAMIC (3)
Input Capacitance Ciss 970 pF VDS=-15V, VGS=0V,
f=1MHz
Output Capacitance Coss 169 pF
Reverse Transfer Capacitance Crss 116 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 3.8 ns
VDD =-15V, ID=-1A
RG=6.0⍀,VGS=-10V
Rise Time tr6.1 ns
Turn-Off Delay Time td(off) 35 ns
Fall Time tf19 ns
Gate Charge Qg12.9 nC VDS=-15V,VGS=-5V,
ID=-4.2A
Total Gate Charge Qg24.9 nC VDS=-15V,VGS=-10V,
ID=-4.2A
Gate-Source Charge Qgs 2.67 nC
Gate-Drain Charge Qgd 3.86 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD -0.85 -0.95 V TJ=25⬚C, IS=-3.6A,
VGS=0V
Reverse Recovery Time (3) trr 21.2 ns TJ=25⬚C, IF=-2A,
di/dt= 100A/␮s
Reverse Recovery Charge (3) Qrr 18.7 nC
ELECTRICAL CHARACTERISTICS (at TA= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width ⱕ300µ s. Duty cycle ⱕ2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMP3A16G
5
ISSUE 2 - JULY 2004
0.1 1 10
0.01
0.1
1
10
0.1 1 10
0.01
0.1
1
10
123
0.1
1
10
-50 0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01 0.1 1 10
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
100
1.5V
10V 4V 3.5V
-VGS
2.5V
2V
3V
Output Characteristics
T=25°C
-VGS
-IDDrainCurrent (A)
-VDS Drain-Source Voltage (V)
4V 3.5V3V
2V
1.5V
10V
2.5V
Output Characteristics
T = 150°C
-IDDrainCurrent (A)
-VDS Drain-Source Voltage (V)
Typical Transfer Characteristics
-VDS =10V
T=25°C
T = 150°C
-IDDrainCurrent (A)
-VGS Gate-SourceVoltage(V) Normalised Curves v Temperature
RDS(on)
VGS =-10V
ID=-4.2A
VGS(th)
VGS =V
DS
ID= -250uA
NormalisedRDS(on) andVGS(th)
Tj Junction Temperature (°C)
1.5V
10V
3V
2V
4V
3.5V
2.5V
On-Resistance v Drain Current
T=25°C
-VGS
RDS(on) Drain-Source On-Resistance (Ω)
-IDDrainCurrent (A)
T = 150°C
T=25°C
Source-Drain Diode Forward Voltage
-VSD Source-Drain Voltage (V)
-ISD Reverse Drain Current (A)
TYPICAL CHARACTERISTICS
ZXMP3A16G
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ISSUE 2 - JULY 2004
Basic Gate Charge Waveform Gate Charge Test Circuit
Switching Time Waveforms Switching Time Test Circuit
Charge
QGS QGD
QG
10V
VGV
VDS
GS
12V 0.2µF 50k
0.3µF
ID
IG
Current
Regulator
Same as
D.U.T
D.U.T
VDS
VGS
90%
10%
trtf
td(off)
td(on)
RG
VGS
RD
VDS
Vcc
-10V Pulse Width < 1µS
Duty Factor 0.1%
£
-
0.1 1 10
0
200
400
600
800
1000
1200
1400
CRSS
COSS
CISS
VGS =0V
f=1MHz
C Capacitance (pF)
-VDS -Drain-SourceVoltage(V) 0 5 10 15 20 25
0
2
4
6
8
10 -ID=4.2A
-VDS = 15V
Gate-SourceVoltagevGateCharge
Capacitance v Drain-Source Voltage Q - Charge (nC)
-VGS Gate-SourceVoltage(V)
CHARACTERISTICS
ZXMP3A16G
ISSUE 2 - JULY 2004
7
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Lansdowne Road, Chadderton
Oldham, OL9 9TY
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
Thispublication isissued toprovideoutlineinformationonly which(unlessagreedbythe Companyinwriting)maynot beused,appliedorreproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex Semiconductors plc 2004
PAD LAYOUT DETAILSPACKAGE OUTLINE
DIM Millimeters Inches DIM Millimeters Inches
Min Max Min Max Min Max Min Max
A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC
A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC
b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287
b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146
C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 -
D 6.30 6.70 0.248 0.264 - ----
PACKAGE DIMENSIONS