MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features * * * * * (+ (,,'* -' & ( -'" (' .)' / & 0'(! Maximum Ratings * * * . ', &"1121 ', &"1121 %&, 3 4#!567&,/ 8 "&"9 ' 9 :9 ; "&"9 ' 9 <9 ,=1 &&8 & ,=! ,=1 &(8 & 6 ,=1 %& 6 ,=! 8 &(>(&**? VDD SOT-23 A D C F B E H G J K DIMENSIONS RD VIN Switching Test Circuit VOUT D VGEN RG DUT G DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 S ton td(on) td(off) Output, VOUT 90 % 10% MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE .031 .800 tf 90% MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 Suggested Solder Pad Layout toff tr MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 .035 .900 .079 2.000 10% INVERTED inches mm 90% 50% Input, VIN 50% 10% Switching Waveforms .037 .950 .037 .950 PULSE WIDTH www.mccsemi.com Revision: 2 2003/04/30 MCC 2N7002 Electrical Characteristics (T Parameter J = 25C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 10A 60 70 -- V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.0 2.0 2.5 V Gate-Body Leakage IGSS VDS = 0V, VGS = 20V -- -- 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V -- -- 1 VDS = 60V, VGS = 0V, TC = 125C -- -- 500 On-State Drain Current(1) ID(on) VDS 7.5V, VGS = 10V 800 1500 -- VGS = 10V, ID = 500mA -- 1.7 3.0 VGS = 5V, ID = 50mA -- 2.5 4.0 gfs VDS = 10V, ID = 200mA -- 250 -- Turn-On Time ton -- 7 20 Turn-Off Time toff VDD = 30V, RL = 150 ID = 200mA, VGEN = 10V RG = 25 -- 12 20 Input Capacitance Ciss VGS = 0V -- 33 50 Output Capacitance Coss VDS = 25V -- 4.3 25 Reverse Transfer Capacitance Crss f = 1.0MHZ -- 1.6 5 VSD IS = 230mA, VGS = 0V -- 0.85 1.5 Static Drain-Source On-State Resistance(1) RDS(on) Forward Transconductance(1) A mA mS Dynamic ns pF Source-Drain Diode Diode Forward Voltage(1) V Notes: (1) Pulse test; pulse width 300 s, duty cycle 2% Fig. 1 - On-Resistance vs. Gate-to-Source Voltage Fig. 2 - Source-Drain Diode Forward Voltage 10 3.5 VGS = 0V 3.0 IS -- Source Current (A) RDS(ON) -- On-Resistance () ID = 230mA 2.5 TJ = 125C 2.0 1.5 1.0 25C 1 TJ = 125C 25C 0.1 0.5 --55C 0.01 0 2 4 6 8 VGS -- Gate-to-Source Voltage (V) 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD -- Source-to-Drain Voltage (V) www.mccsemi.com Revision: 2 2003/04/30 MCC 2N7002 Fig. 4 - Transfer Characteristics Fig. 3 - Output Characteristics 1.5 1.5 VGS = 10V 7.0V VDS = 10V TJ = 125C --55C ID -- Drain Current (A) ID -- Drain Current (A) 1.2 6.0V 0.9 5.0V 4.5V 0.6 4.0V 25C 1 0.5 0.3 3.5V 3.0V 0 0 1 2 0 3 4 0 5 4 8 Fig. 5 - Capacitance Fig. 6 - On-Resistance vs. Drain Current 10 4 f = 1 MHz VGS = 0V 3.5 RDS(ON) -- On-Resistance () 40 Ciss 30 20 10 Coss 0 10 3 2.5 2 VGS = 5V 1.5 1 VGS = 10V Crss 0 0.5 20 30 40 50 60 0 0.3 0.6 0.9 1.2 1.5 ID -- Drain Current (A) VDS Drain-to-Source Voltage (V) Fig. 8 - Breakdown Voltage vs. Junction Temperature Fig. 7 - Gate Charge 10 74 VGS = 30V ID = 230mA BVDSS -- Breakdown Voltage (V) VGS -- Gate-to-Source Voltage (V) 6 VGS -- Gate-to-Source Voltage (V) 45 C -- Capacitance (pF) 2 VDS -- Drain-to-Source Voltage (V) 8 6 4 2 0 0 0.2 0.4 0.6 0.8 Qg -- Gate Charge (nC) 1.0 1.2 72 ID = 250A 70 68 66 64 62 60 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (C) www.mccsemi.com Revision: 2 2003/04/30 MCC 2N7002 Fig. 9 - Threshold Voltage 2.6 ID = 250A VGS(th) -- Gate-to-Source Threshold Voltage (V) 2.4 2.2 2 1.8 1.6 1.4 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (C) Fig. 10 - On-Resistance vs. Junction Temperature Fig. 11 - Thermal Impedance 1 1.8 D = 0.5 VGS = 10V ID = 500mA RJA (norm) -- Normalized Thermal Impedance RDS(ON) On-Resistance (Normalized) 2.0 1.6 1.4 1.2 1.0 0.8 0.6 0.4 --50 --25 0 25 50 75 100 125 0.2 PDM 0.1 0.1 0.05 0.01 0.1 1 10 100 Pulse Duration (sec.) Fig. 12 - Power vs. Pulse Duration Fig. 13 - Maximum Safe Operating Area 10 4.0 Single Pulse RJA = 417C/W TA = 25C 10 ID -- Drain Current (A) 3.2 Power (W) 1. Duty Cycle, D = t1/t2 2. RJA (t) = RJA(norm) *RJA 3. RJA = 417C/W 4. TJ - TA = PDM * RJA (t) Single Pulse TJ -- Junction Temperature (C) 2.4 1.6 0 s 1 it S RD 0.1 N) (O 1m Lim s 10 ms 10 0m s 1s 10s 0.01 DC VGS = 10V Single Pulse TA = 25C 0.8 0 0.001 t2 0.01 0.01 0.0001 0.001 150 t1 0.02 0.001 0.01 0.1 1 Pulse Duration (sec.) 10 100 0.1 1 10 100 VDS -- Drain-Source Voltage (V) www.mccsemi.com Revision: 2 2003/04/30