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
Features
• (+(,,'*
• -'&(
• -'"('
• .)'/&
• 0'(!
Maximum Ratings
• .',&"11°21°
• ',&"11°21°
• %&,34#!°567&,/
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8"&"9' 9 :9
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8 6
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&(>(&**?
Switching
Test Circuit
G
D
S
VIN
VDD
VGEN RG
RD
VOUT
DUT
Input, VIN
td(on)
Output, VOUT
ton
trtd(off)
toff
tf
INVERTED
90%
10%10%
90 %
50% 50%
10%
90%
PULSE WIDTH
Switching
Waveforms
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A.110 .120 2.80 3.04
B.083 .098 2.10 2.64
C.047 .055 1.20 1.40
D.035 .041 .89 1.03
E.070 .081 1.78 2.05
F.018 .024 .45 .60
G.0005 .0039 .013 .100
H.035 .044 .89 1.12
J.003 .007 .085 .180
K.015 .020 .37 .51
A
B
C
D
E
F
G
H
J
.079
2.000
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
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Revision: 2 2003/04/30
omponents
20736 Marilla Street Chatsworth

 !"#
$% !"#
MCC
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID= 10µA6070—V
Gate Threshold Voltage VGS(th) VDS = VGS, ID= 250µA 1.0 2.0 2.5 V
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ——
±100 nA
Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V —— 1µA
VDS = 60V, VGS = 0V, TC= 125°C
——500
On-State Drain Current(1) ID(on) VDS ≥7.5V, VGS = 10V 800 1500 —mA
Drain-Source On-State Resistance(1) RDS(on) VGS = 10V, ID = 500mA —1.7 3.0 Ω
VGS = 5V, ID= 50mA —2.5 4.0
Forward Transconductance(1) gfs VDS = 10V, ID= 200mA —250 —mS
Dynamic
Turn-On Time ton —720
Turn-Off Time toff —12 20 ns
Input Capacitance Ciss VGS = 0V —33 50
Output Capacitance Coss VDS = 25V —4.3 25 pF
Reverse Transfer Capacitance Crss f = 1.0MHZ—1.6 5
Source-Drain Diode
Diode Forward Voltage(1) VSD IS= 230mA, VGS = 0V —0.85 1.5 V
Notes:
(1) Pulse test; pulse width ≤300 µs, duty cycle ≤2%
VDD = 30V, RL= 150Ω
ID= 200mA, VGEN = 10V
RG= 25Ω
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4
TJ = 125°C
Fig. 2 – Source-Drain Diode
Forward Voltage
25°C
--55°C
VGS = 0V
IS -- Source Current (A)
VSD -- Source-to-Drain Voltage (V)
Fig. 1 – On-Resistance
vs. Gate-to-Source Voltage
ID = 230mA
0
0.5
1.0
2.0
1.5
2.5
3.0
3.5
2
RDS(ON) -- On-Resistance (Ω)
VGS -- Gate-to-Source Voltage (V)
46810
TJ = 125°C
25°C
MCC
2N7002
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Revision: 2 2003/04/30
0
0.3
0.6
0.9
1.5
012 34 5
Fig. 3 – Output Characteristics
ID -- Drain Current (A)
VDS -- Drain-to-Source Voltage (V)
0.5
1
1.5
2
2.5
3
3.5
4
0 0.3 0.6 0.9 1.2 1.5
Fig. 6 – On-Resistance
vs. Drain Current
RDS(ON) -- On-Resistance (Ω)
ID -- Drain Current (A)
00246810
0.5
1
1.5 Fig. 4 – Transfer Characteristics
ID -- Drain Current (A)
VGS -- Gate-to-Source Voltage (V)
1.2
2
0
8
10
6
4
0 0.2 0.6 0.8 1.0 1.20.4
VGS -- Gate-to-Source Voltage (V)
Qg -- Gate Charge (nC)
Fig. 7 – Gate Charge
VGS = 30V
ID = 230mA
VGS = 10V
VGS = 5V
VDS = 10V
25°C
0
10
20
30
40
45
010 30 40 50 6020
C -- Capacitance (pF)
VDS Drain-to-Source Voltage (V)
Fig. 5 – Capacitance
f = 1 MHz
VGS = 0V
VGS = 10V 7.0V
6.0V
5.0V 4.5V
3.5V 3.0V
4.0V
--55°CTJ = 125°C
Ciss
Coss
Crss
60
62
64
66
68
70
72
74
--50 --25 25 50 75 100 1250
Fig. 8 – Breakdown Voltage vs.
Junction Temperature
150
ID = 250µA
BVDSS -- Breakdown Voltage (V)
TJ -- Junction Temperature (°C)
MCC
2N7002
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Revision: 2 2003/04/30
--50 --25 25 50 75 100 1250
1.4
1.6
1.8
2
2.2
2.4
2.6 Fig. 9 – Threshold V oltage
150
ID = 250µA
VGS(th) -- Gate-to-Source
Threshold Voltage (V)
TJ -- Junction Temperature (°C)
Fig. 13 – Maximum Saf e Operating Area
0.0001 0.001 0.01
0.01 0.1
0.1
1
1
10 100
ID -- Drain Current (A)
VDS -- Drain-Source Voltage (V)
Fig. 11 – Thermal Impedance
RΘJA (norm) -- Normalized Thermal
Impedance
Pulse Duration (sec.)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
--50 --25 25 50 75 100 1250
Fig. 10 – On-Resistance vs.
Junction T emperature
150
VGS = 10V
ID = 500mA
RDS(ON) On-Resistance (Normalized)
TJ -- Junction Temperature (°C)
Single Pulse
0.001 0.01 0.1
00.001
0.01
0.1
0.1
1
1
10
10 100
0.8
1.6
2.4
3.2
4.0
1 10 100
Fig. 12 – P o wer vs. Pulse Duration
Power (W)
Pulse Duration (sec.)
Single Pulse
RθJA = 417°C/W
TA = 25°C
VGS = 10V
Single Pulse
TA = 25°C
R
DS(ON)
Limit
100µs
1ms
10ms
100ms
1s
DC
10s
D = 0.5
0.2
0.01
0.1
t1t2
PDM
1. Duty Cycle, D = t1/t2
2. RθJA (t) = RθJA(norm) *RθJA
3. RθJA = 417°C/W
4. TJ - TA = PDM * RθJA (t)
0.05
0.02
MCC
2N7002
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Revision: 2 2003/04/30