RHRP30120_F102 - ON SEMICONDUCTOR

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RHRP30120

30 A, 1200 V, Hyperfast Diode

The RHRP30120 is a hyperfast diode with soft recovery

characteristics. It has the half recovery time of ultrafast

diodes and is silicon nitride passivated ionimplanted

epitaxial planar construction. These devices are

intended to be used as freewheeling/ clamping diodes

and diodes in a variety of switching power supplies and

other power switching applications. Their low stored

charge and hyperfast soft recovery minimize ringing

and electrical noise in many power switching circuits

reducing power loss in the switching transistors.

NOTE: When ordering, use the entire part number.

Symbol

Features

Applications

•Switching Power Supplies

•Power Switching Circuits

•General Purpose

Packaging

JEDEC TO-220AC

Ordering Information

PART NUMBER PACKAGE BRAND

RHRP30120 TO-220AC RHR30120

CATHODE

ANODE

CATHODE

(FLANGE)

Absolute Maximum Ratings TC =25oC

RHRP30120 UNIT

PeakRepetitiveReverseVoltage ...........................................................V

RRM 1200 V

WorkingPeakReverseVoltage............................................................V

RWM 1200 V

DCBlockingVoltage.......................................................................V

R1200 V

AverageRectifiedForwardCurrent..........................................................I

F(AV) 30 A

(TC=78

oC)

RepetitivePeakSurgeCurrent .............................................................I

FRM 60 A

(Square Wave, 20 kHz)

NonrepetitivePeakSurgeCurrent........................................................... I

FSM 300 A

(Halfwave, 1 Phase, 60 Hz)

MaximumPowerDissipation.................................................................P

D125 W

AvalancheEnergy(SeeFigures7and8).....................................................E

AVL 30 mJ

OperatingandStorageTemperature......................................................T

STG,T

J-65 to 175 oC

• Hyperfast Recovery trr = 85 ns (@ IF = 30 A)

• Max Forward Voltage, VF = 3.2 V (@ TC = 25°C)

• 1200 V Reverse Voltage and High Reliability

• Avalanche Energy Rated

• RoHS Compliant

www.fairchildsemi.com

RHRP30120 Rev. C1

Data Sheet November 2013

Electrical Specifications TC=25

oC, Unless Otherwise Specified

SYMBOL TEST CONDITION MIN TYP MAX UNIT

VF- - 3.2 V

--2.6V

IR- - 250 µA

- - 1mA

trr - -65ns

- - 85 ns

ta- 48 - ns

IF = 30 A

IF =30 A,TC =150

VR = 1200 V

VR = 1200 V, TC =150

IF =1 A, diF/dt = 100 A/µs

IF =30 A,diF/dt = 100 A/µs

- 22 - ns

RθJC --1.2

oC/W

DEFINITIONS

VF= Instantaneous forward voltage (pw = 300µs, D = 2%).

IR= Instantaneous reverse current.

Trr = Reverse recovery time (See Figure 6), summation of ta +tb.

ta = Time to reach peak reverse current (See Figure 6).

tb =Time from peak I

RM to projected zero crossing of IRM basedonastraightlinefrompeakI

RM through 25% of IRM (See Figure 6).

RθJC = Thermal resistance junction to case.

pw = pulse width.

D = duty cycle.

Typical Performance Curves

FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE

200

100

IF, FORWARD CURRENT (A)

VF, FORWARD VOLTAGE (V)

175oC

100oC

25oC

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

500

100

1.0

0.1

0.01

IR, REVERSE CURRENT (µA)

200 400 600 800 1000

VR, REVERSE VOLTAGE (V)

1200

0.001

175oC

100oC

25oC

RHRP30120

www.fairchildsemi.com

RHRP30120 Rev. C1

FIGURE 3. trr,t

aAND tbCURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE

Typical Performance Curves (Continued)

100

t, TIME (ns)

IF, FORWARD CURRENT (A)

trr

10 30

025 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

IF(AV), AVERAGE FORWARD CURRENT (A)

SQ. WAVE

Test Circuits and Waveforms

FIGURE 5. trr TEST CIRCUIT FIGURE 6. trr WAVEFORMS AND DEFINITIONS

FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT AND VOLTAGE

WAVEFORMS

VDD

IGBT

CURRENT

SENSE

DUT

VGE t1

VGE AMPLITUDE AND

t1 AND t2CONTROL IF

RGCONTROL dIF/dt

dIF

IFtrr

tatb

IRM

0.25 IRM

DUT

CURRENT

SENSE +

VDD

R<0.1Ω

EAVL =1/2LI

2[VR(AVL)/(VR(AVL) -V

DD)]

Q1=IGBT(BV

CES > DUT VR(AVL))

VDD

IMAX = 1.225A

L=40mH

t0t1t2

VAVL

RHRP30120

www.fairchildsemi.com

RHRP30120 Rev. C1

5°

3°

5°

3°

4.80

4.30

10.67

9.65

4.09

3.50

3.43

2.54

9.40

8.38

2.54

5.08

16.51

14.22

14.73

13.60

1.02

0.38

6.35 MAX

1.65

1.25

1.91

0.36

B A

0.36

A B

1.40

0.51

7°

3°

6.86

5.84

2.92

2.03

0.61

0.33

5°

3°

5°

3°

13.40

12.19

8.89

6.86

0.60 MAX

16.15

15.75

NOTES:

A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K,

VARIATION AC,DATED APRIL 2002.

B. ALL DIMENSIONS ARE IN MILLIMETERS.

C. DIMENSION AND TOLERANCE AS PER ASME

Y14.5-2009.

D. DIMENSIONS ARE EXCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR PROTRUSIONS.

E. DRAWING FILE NAME: TO220A02REV5

1 2

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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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