MOSPOWER Selector Guide *200C Rating MOSPOWER Selector Guide = Sse" N-Channel MOSPOWER Breakdown Ip Power Device Voltage (Bolon Continuous Dissipation Part (Volts) (Ohms (Amps) (Watts) Number 500 0.4 13.0 150 IRF450 500 0.5 12.0 150 IRF452 500 0.85 8.0 125 IRF440 500 1.10 7.0 125 IRF442 500 1.5 6.5 175 VNPO002A* 500 1.5 45 100 VN5001A 500 1.5 45 75 IRF430 500 2.0 4.0 100 VN5002A 500 2.0 4.0 75 IRF432 500 3.0 2.5 40 {RF420 500 4.0 2.0 40 IRF422 450 0.4 13.0 150 IRF461 450 0.5 12.0 150 IRF453 450 0.85 8.0 125 IRF441 450 1.10 7.0 125 IRF443 450 1.5 6.5 175 VNNOO2A* 450 1.5 45 100 VN4501A 450 1.5 45 75 IRF431 450 2.0 40 100 VN4502A 450 2.0 4.0 75 IRF433 450 3.0 2.5 40 IRF421 450 4.0 2.0 40 IRF423 400 0.3 15.0 150 IRF350 400 0.4 13.0 150 IRF352 400 0.55 10.0 125 (RF340 400 0.80 8.0 125 IRF342 400 1.0 8.0 175 VNMO01A* 400 1.0 6.0 125 VN4000A 400 1.0 5.5 76 IRF330 400 1.5 5.0 125 VN4001A 400 1.5 45 75 IRF332 e 400 1.8 3.0 40 IRF320 400 2.5 2.5 40 IRF322 eS 350 0.3 15.0 150 IRF351 350 0.4 13.0 150 IRF353 350 0.55 10.0 125 (RF341 TO-3 350 0.80 8.0 125 IRF343 350 1.0 8.0 175 VNLOO01A* 350 1.0 6.0 125 VN3500A 350 1.0 5.5 75 IRF331 350 1.5 5.0 125 VN3501A 350 1.5 45 75 IRF333 350 1.8 3.0 40 IRF321 350 2.5 2.5 40 IRF323 200 0.085 30.0 150 IRF250 200 0.12 25.0 150 IRF252 200 0.18 18.0 125 IRF240 200 0.22 16.0 125 IRF242 200 0.4 9.0 75 {RF230 200 0.6 8.0 75 IRF232 200 0.8 5.0 40 IRF220 200 1.2 4.0 40 IRF222 150 0.085 30.0 150 IRF251 150 0.12 25.0 150 IRF253 150 0.18 18.0 125 IRF241 150 0.22 16.0 125 IRF243 150 0.4 9.0 75 IRF231 150 0.6 8.0 75 IRF233 150 0.8 5.0 40 IRF221 150 1.2 4.0 40 IRF223 120 0.18 14.0 75 VN1200A 120 0.25 12.0 100 VN1201A 1-4 Siliconix IRF250 = IRF254 = IRF252 = IRF253 Ss Siliconix : N-Channel Enhancement-Mode _ M O Sp OWER Advanced Information These power FETs are designed especially for offline switching regulators, power converters, solenoid and relay drivers. FEATURES Product Summary w= No Second Breakdown Part BV tree, \ Package a High Input Impedance Number oss | sen) . a Internal Drain-Source Diode |RF250 200 0.0889 | 30A m Very Rugged: Excellent SOA IRF 251 150 10-3 a Extremely Fast Switching IRF 252 200 0.1209 | 25a IRF253 150 BENEFITS a Reduced Component Count D a Improved Performance tel . . G a Simpler Designs aa a Improved Reliability s ABSOLUTE MAXIMUM RATINGS (Tc =25C unless otherwise noted) Drain-Source Voltage Gate Current (Peak).............0.0000 aes + 3A IRF250, 252... 0... cece cee eee 200V IRF251,253............. ee 150V Gate-Source Voltage..............00.005 +40V : Total Power Dissipation ................. 150W Oe ate voltage 200V Linear Derating Factor .............. 1.2WIC IRF251, 253.0... 0.0... cee ee eee 150V Operating and Storage Drain Current Temperature ..............5. - 55to +150C Continuous Notes: IRF250, 251 ...........0800-- eee +30A 1. Limited by package dissipation. IRF252, 253 0... eee eee es +25A 2. Pulse test 80Hs to 300ys, 1% duty cycle. Pulsed?... 0... eee eee cent ee +120A PACKAGE DIMENSIONS 0.875 0.450 (71.43) bomen (22 225) aml 0.250 (6.25) 0.135 max MAX t (3.429) 1 312 = seatin cos coer ae < PRANE 1.197 (90.404) | Pin 1 Gate 0.675 - (17.145) [77 25.806 Pin 2 Source OBS (76.697) | CASE Drain Ss 2398, wax | U BOTH ENDS oaeo 77.176) | =e 0.420 (10.668) 0.161 (4.089) 0.225 (5.715) 0525 0,151 (3.835) 0.208 5.207} BOTTOM VIEW (13.335) R MAX TO-3 2-16 Siliconix ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Part . . 7 Parameter Number Min Max | Unit Test Conditions Static Drain-Source Breakdown IRF250, 252 | 200 BV, v Ves =0, Ip = 250nA 08S voltage IRF251, 253 | 150 as=0, In=2 Vasithy Gate Threshold Voltage All 2.0 | 4.0 Vv Ves= Vos, Ilp=1mA lass Gate-Body Leakage All +100 nA Ves= +20V, Vos =0 0.25 Vos = Rated Vps, Ves = 9 loss Zero Gate Voltage Drain Current All mA BS Ds, SS 1.0 Vps = Rated Vos, Veg = 0, Te = 125C loyon) On-State Drain Current Alt 30 A Vos = 25V, Veg = 10V (Note 1) Static Drain-Source On-State IRF250, 251 0.085 f Q Ves = 10V, Ip = 16A (Note 14 pSon) Resistance IRF 252, 253 0.120 $s 5 ( ) Dynamic Its Forward Transconductance All 8 S$ Vos = 12V, Ip = 16A (Note 1) Ciss Input Capacitance 3000 Coss Output Capacitance All 1200 pF Ves = 0, Vos = 25V, f= 1 MHz Criss Reverse Transfer Capacitance 500 taron) Turn-On Delay Time All 35 t Rise Time All 100 | ns. | Voo=75, Ip=16A, RL =7.59, Ry=4,79, taorn Turn-Off Delay Time All 125 (Figure 1) ty Fall Time All 100 Drain-Source Diode Characteristics Typ Vsp Forward On Voltage Alt -1.6 v Is = ~30A (Note 1) tre Reverse Recovery Time All 500 ns lp =-30A, Veg = 0, di/dt = 100A/us (Fig. 2) Note: 1. Pulse test: 80 ns to 300 us, 1% duty cycle. FIGURE 1 Switching Test Circuit FIGURE 2. Reverse Recovery Test Circuit AW 502 difdt ADJUST (1-27 2H) + 0.5 TO 50 uF IN4933 & F__ pk) ADJUST : Vout ~ Cs 9 2400 rm + > IN4001 14000 .Fa5 2 >t _ < | | ciRcurr R < 0.259 UNDER [GENERATOR] [TEST L = 0.01 pH P.W. = 1 ys Cg < 50 pF ig . le A DUTY CYCLE =1% s ae wv IN4723 2N4204 === SCOPE 6 FROM TRIGGER CKT ") Siliconix 2-17 eGzdal = ZSZsal = bSZal = OSZsal