2N7002W N-Channel Enhancement Mode Field Effect Transistor Features * * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant D S G SOT-323 Marking : 2N Absolute Maximum Ratings * Symbol TA = 25C unless otherwise noted Value Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage RGS 1.0M 60 V VGSS Gate-Source Voltage Continuous Pulsed 20 40 V Continuous Continuous @ 100C Pulsed 115 73 800 mA -55 to +150 C ID TJ , TSTG Parameter Drain Current Junction and Storage Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol PD RJA Parameter Value Units Total Device Dissipation Derating above TA = 25C 200 1.6 mW mW/C Thermal Resistance, Junction to Ambient * 625 C/W * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size. (c) 2010 Fairchild Semiconductor Corporation 2N7002W Rev. A1 www.fairchildsemi.com 1 2N7002W -- N-Channel Enhancement Mode Field Effect Transistor February 2010 Symbol TA = 25C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units 60 78 - V - 0.001 7 1.0 500 A VGS=20V, VDS=0V - 0.2 10 nA 1.0 Off Characteristics (Note1) BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, ID=10uA Zero Gate Voltage Drain Current VDS=60V, VGS=0V VDS=60V, VGS=0V, @TC=125C IGSS Gate-Body Leakage On Characteristics (Note1) VGS(th) Gate Threshold Voltage VDS=VGS, ID=250A 1.76 2.0 V RDS(ON) Static Drain-Source On-Resistance - 1.6 2.53 7.5 13.5 On-State Drain Current VGS=5V, ID=0.05A, VGS=10V, ID=0.5A, @TJ=125C VGS=10V, VDS=7.5V 0.5 1.43 - A Forward Transconductance VDS=10V, ID=0.2A 80 356.5 - mS - 37.8 50 pF - 12.4 25 pF - 6.5 7.0 pF - 5.85 20 - 12.5 20 ID(ON) gFS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1.0MHz Switching Characteristics tD(ON) Turn-On Delay Time tD(OFF) Turn-Off Delay Time VDD=30V, ID=0.2A, VGEN=10V RL=150, RGEN=25 ns Note1 : Short duration test pulse used to minimize self-heating effect. (c) 2010 Fairchild Semiconductor Corporation 2N7002W Rev. A1 www.fairchildsemi.com 2 2N7002W -- N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 3.0 RDS(on), () DRANI-SOURCE ON-RESISTANCE ID. DRAIN-SOURCE CURRENT(A) 1.6 VGS = 10V 1.4 1.2 5V 1.0 4V 0.8 0.6 0.4 3V 0.2 2V 0.0 0 1 2 3 4 5 6 7 8 9 VGS = 3V 2.0 10V 1.5 8V 7V 0.2 0.4 RDS(on), () DRANI-SOURCE ON-RESISTANCE RDS(on) () DRANI-SOURCE ON-RESISTANCE 0.8 1.0 3.0 VGS = 10V ID = 500 mA 2.5 2.0 1.5 1.0 0.5 -50 0 50 100 2.5 ID = 500 mA 2.0 ID = 50 mA 1.5 1.0 150 2 4 TJ. JUNCTION TEMPERATURE( C) 1.0 o TJ = -25 C o 150 C 0.8 o 25 C o 125 C 0.6 o 75 C 0.4 0.2 3 4 8 10 Figure 6. Gate Threshold Variation with Temperature Vth, Gate-Source Threshold Voltage (V) Figure 5. Transfer Characteristics VDS = 10V 6 VGS. GATE-SOURCE VOLTAGE (V) o ID. DRAIN-SOURCE CURRENT(A) 0.6 Figure 4. On-Resistance Variation with Gate-Source Voltage 3.0 5 2.5 VGS = VDS 2.0 ID = 1 mA ID = 0.25 mA 1.5 1.0 -50 6 0 50 100 150 o TJ. JUNCTION TEMPERATURE( C) VGS. GATE-SOURCE VOLTAGE (V) (c) 2010 Fairchild Semiconductor Corporation 2N7002W Rev. A1 9V ID. DRAIN-SOURCE CURRENT(A) Figure 3. On-Resistance Variation with Temperature 2 5V 6V VDS. DRAIN-SOURCE VOLTAGE (V) 0.0 4.5V 2.5 1.0 0.0 10 4V 2N7002W -- N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics www.fairchildsemi.com 3 Figure 8. Power Derating 280 VGS = 0 V o 150 C PC[mW], POWER DISSIPATION IS Reverse Drain Current, [mA] Figure 7. Reverse Drain Current Variation with Diode Forward Voltage and Temperature 100 o 25 C 10 o -55 C 1 0.0 0.2 0.4 0.6 0.8 200 160 120 80 40 0 1.0 0 VSD, Body Diode Forward Voltage [V] 25 50 o 75 100 125 150 Ta[ C], AMBIENT TEMPERATURE (c) 2010 Fairchild Semiconductor Corporation 2N7002W Rev. A1 240 175 2N7002W -- N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics www.fairchildsemi.com 4 SOT323 (c) 2010 Fairchild Semiconductor Corporation 2N7002W Rev. A1 2N7002W -- N-Channel Enhancement Mode Field Effect Transistor Package Dimensions www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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