2N7002W - Fairchild Semiconductor Corporation

2N7002W — N-Channel Enhancement Mode Field Effect Transistor

2N7002W Rev. A1 1

February 2010

2N7002W

N-Channel Enhancement Mode Field Effect Transistor

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching S peed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant

Absolute Maximum Ratings * TA = 25°C unless otherwise noted

* These ratings are limiting value s ab ove which the serviceability of any semiconductor device may by impaired.

Thermal Characteristics

* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.

Symbol Parameter Value Units

VDSS Drain-Source Voltage 60 V

VDGR Drain-Gate Voltage RGS  1.0M 60 V

VGSS Gate-Source V oltage Continuous

Pulsed ±20

±40 V

ID Drain Current Continuous

Continuous @ 100°C

Pulsed

115

800 mA

TJ , TSTG Junction and Storage Temperature Range -55 to +150 C

Symbol Parameter Value Units

PDTotal Device Dissipation

Derating above TA = 25°C 200

1.6 mW

mW/C

RJA Thermal Resistance, Junction to Ambient * 625 C/W

SOT-323

Marking : 2N

2N7002W — N-Channel Enhancement Mode Field Effect Transistor

2N7002W Rev. A1 2

Electrical Characteristics TA = 25°C unless otherwi se noted

Off Characteristic s (Note1)

On Characteristics (Note1)

Dynamic Characteristics

Switching Characteristics

Note1 : Short duration test pulse used to mi nimize self-heating effect.

Symbol Parameter Test Condition Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=10uA 60 78 - V

IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V

VDS=60V, VGS=0V, @TC=125C-0.001

71.0

500 A

IGSS Gate-Body Leakage VGS=±20V, VDS=0V - 0.2 ±10 nA

VGS(th) Gate Threshold Voltage VDS=VGS, ID=250A 1.0 1.76 2.0 V

RDS(ON) Static Drain-Source

On-Resistance VGS=5V, ID=0.05A,

VGS=10V, ID=0.5A, @TJ=125°C -

-1.6

2.53 7.5

13.5 

ID(ON) On-State Drain Current VGS=10V, VDS=7.5V 0.5 1.43 - A

gFS Forward Transconductance VDS=10V, ID=0.2A 80 356.5 - mS

Ciss Input Capacitance VDS=25V, VGS=0V, f=1.0MHz -37.850pF

Coss Output Capacitance - 12.4 25 pF

Crss Reverse Transfer Capacitance - 6.5 7.0 pF

tD(ON) Turn-On Delay Time VDD=30V, ID=0.2A, VGEN=10V

RL=150, RGEN=25

-5.8520

tD(OFF) Turn-Off Delay Time - 12.5 20

2N7002W — N-Channel Enhancement Mode Field Effect Transistor

2N7002W Rev. A1 3

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current

Figure 3. On-Resistance Variation with

Temperature Figure 4. On-Resistance Variation with

Gate-Source Voltage

Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with

Temperature

012345678910

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VGS = 10V

ID. DRAIN-SOURCE CURRENT(A)

VDS. DRAIN-SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0

1.0

1.5

2.0

2.5

3.0

(Ω)

10V

4V 4.5V

VGS = 3V

RDS(on),

DRANI-SOURCE ON-RESISTANCE

ID. DRAIN-SOURCE CURRENT(A)

-50 0 50 100 150

0.5

1.0

1.5

2.0

2.5

3.0

(Ω)

VGS = 10V

ID = 500 mA

RDS(on)

DRANI-SOURCE ON-RESISTANCE

TJ. JUNCTION TEMPERATURE(oC)

246810

1.0

1.5

2.0

2.5

3.0

ID = 500 mA

(Ω)

ID = 50 mA

RDS(on),

DRANI-SOURCE ON-RESISTANCE

VGS. GATE-SOURCE VOLTAGE (V)

23456

0.0

0.2

0.4

0.6

0.8

1.0

VDS = 10V

75oC

125oC

150oC

25oC

TJ = -25oC

ID. DRAIN-SOURCE CURRENT(A)

VGS. GATE-SOURCE VOLTAGE (V)

-50 0 50 100 150

1.0

1.5

2.0

2.5

ID = 0.25 mA

ID = 1 mA

VGS = VDS

Vth, Gate-Source Threshold Voltage (V)

TJ. JUNCTION TEMPERATURE(oC)

2N7002W — N-Channel Enhancement Mode Field Effect Transistor

2N7002W Rev. A1 4

Typical Performance Characteristics

Figure 7. Reverse Drain Current Variation with

Diode Forward Voltage and Temperature Figure 8. Power Derating

100

0.0 0.2 0.4 0.6 0.8 1.0

-55oC

VGS = 0 V

150oC

25oC

VSD, Body Diode Forward Voltage [V]

IS Reverse Drain Current, [mA]

0 25 50 75 100 125 150 175

120

160

200

240

280

PC[mW], POWER DISSIPATION

Ta[oC], AMBIENT TEMPERATURE

2N7002W — N-Channel Enhancement Mode Field Effect Transistor

2N7002W Rev. A1 5

Package Dimensions

SOT323

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Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in

any manner without notice.

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The datasheet is for reference information only. Rev. I47