SES C22 BAW62 _ HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is primarily intended for fast logic - applications. QUICK REFERENCE DATA Continuous reverse voltage VR max. 75 V Repetitive peak reverse voltage. Veram =-max. 75 V Repetitive peak forward current lceRmM max. 450 mA Junction temperature Tj max. 200 C Forward voltage at lp = 100 mA VE < 1 Vv Reverse recovery time when switched from le = 10 mA to Ip = 10 mA; Ry = 100 Q; measured atip = 1mA ter < 4 ns MECHANICAL DATA Dimensions in mm Fig. 1 SOD-27 (DO-35). + k 056 ae (O) 4H | si tet 4. 1,85 |. min { ax) min rr ee ee a 1 Le ne es ee ee ee ~ TZ66863 blue red blue (cathode) Diodes may be either type-branded or colour-coded. Products, approved to CECC 50 001-021. June 1979 307BAW62 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Continuous reverse voltage VR max. 75 Repetitive peak reverse voltage VRRM max. 75 Average rectified forward current IR(AV) max. 150 Forward current (d.c.) IF max, 200 Repetitive peak forward current lerRM max. 450 Non-repetitive peak forward current;t =1lus lesmM max. 2000 t=ls lFsM max. 300 Storage temperature Tstg -65 to +200 Junction temperature Tj max, 200 THERMAL RESISTANCE From junction to ambient in free air at maximum lead length Rth j-a = 0,6 CHARACTERISTICS Tj = 25 C unless otherwise Forward voltages Ip = SmA Ve 0,62 to 0, 75 Ip = 100 mA VE < 1, 00 = . - Oo Ip = 100 mA; Tj = 100 Cc VE < 0,93 Reverse currents VR =20V IR < 25 VR = 20 V; Tj = 150 C IR < 50 Ve =50V Ip: < 200 VaR zivv IR < 3 Vp =75 Vi Tj = 150 C Ip < 100 Diode capacitance Vp =0; =1 MHz Cq < 2 1) For pulse oneration see Figs 5 and 6. For sinusoidal operation see Figs? to 10. 308 Vv mA 1) mA mA mA mA c oC K/mW specified nA yA nA yA pF July 1986High-speed silicon diode | BAW62 CHARACTERISTICS (continued) Tj = 25 oc Forward recovery voltage when switched to Ip = 50 mA; ty = 200s Ver < 2,5 V Test circuit and waveforms: i. tk 4500 1 vio_ Vee Rs? 50 oscilloscope O.UT. R\=50N . | tr tp 726122? 7Z61329,1 Fig. 2. input signal output signal Input signal : Rise time of the forward pulse tr = 20 ns Forward current pulse duration tp = 120 ns Duty factor 6 = 0,01 Oscilloscope: Rise time tr = 0,35 ns Circuit capacitance C <1 pF (C = oscilloscope input capacitance + parasitic capacitance) Reverse recovery time when switched from Ip = 10 mAto Ip = 10 mA; Ry = 100 &; measured at IR = 1 mA ter < 4 ns Test circuit and waveforms: OT meee | \ : te ty t | + 7 0% 7 R5=50n z ! Hi +Ie pt tre a" | 17 | crete cae ne VeVe+ ep Rs Nee me me ee rm Ry 2500. oo fit | Ve I, TZ61326 THIEL Fig. 3. input signal output signal Input signal : Rise time of the reverse pulse tr = 0,6 ns *)IR =1lmA Reverse pulse duration tp = 100 ns Duty factor 6 = 0,05 Oscilloscope: Rise time th = 0,35 ns Circuit capacitance C <1 pF (C = oscilloscope input capacitance + parasitic capacitance) March 1991 309BAW62 CHARACTERISTICS (continued) T; = 25 Recovery charge when switched from Ip = 10 mA to Vp =5 V; Ry = 500 2 Qs typ. 50 pc Test circuit and waveform: OUT. R,=500N 3 | 400 | oscilloscope Lf &) Ip 02{ c Ve ko TY 243pF R,210MO VavarteRs tr] | | TZ7VII2 @: output signal Di = D2 = BAW62 Fig. 4. evens Input signal : Rise time of the reverse pulse tr = 2 ns Reverse pulse duration tp = 400 ns Duty factor 6 = 0,02 Circuit capacitance C =7 pF (C = oscilloscope input capacitance + parasitic capacitance) 310 June 1975High-speed silicon diode BAW62 200 7Z272417.1 IE(AV) (mA) 100 FILO oO /FRM sas areocty | : 0 ERE? F(AV) ie Tt t b= t<0,5ms Vpupto20V; ----Vp=75V. 0 0 0,5 5 1,0 Fig. 5 Maximum permissible average rectified forward current as a function of the duty factor {pulse operated). - 7Z72418.1 500 IERM (mA) 250 F [ FRM ae iti 125C it 5-2 ; +> - + Q T 150C t <0,5 ms Q 175C VR upto 20V; 0 ----Vp=75V. 0 0,5 8 1,0 Fig. 6 Maximum permissible repetitive peak forward current as a function of the duty factor (pulse operated). June 1979 311BAW62 IL 7272419.1 7272420.1 300 300 1 < Fe T<1ms | 27 FAV) I FIAV) TI F imA) ___T-_ (mA) 200 200 (1) Vp up to 20V 100 100 0 0 0 100 Tamb (C) 200 0 100 Tamb (C) 200 Fig. 7 Maximum permissible average Fig. 8 Maximum permissible continuous rectified forward current. forward current. 600 7282273 15 | 7282274 Ip VE Ip =450mA (Vv) (mA) typ T max T max 400 1,0 200 0,5 0 0 a 1 Ve (V) 2 0 100 Tj (C) 200 Fig.9 Forward current as a function forward Fig. 10 Typical values forward voitage as a voltage. T; = 25 9C: Tj = 175 C. function of junction temperature. 312 June 1979High-speed silicon diode BAWE62 0,5 15 tre (ns) 10 7Z1G526.1 typical values Tj = 25C 7Z10524 (pF) 0,5 tr (ns) 50 0 10 Ve () 29 7Z10521.1 typical values R_ = 1002. Tj = 25C measured at 10 Yo of Ip Les Vee i 50 I=(mA) 100 313 | (sm 1975BAW62 002 (90) !1 ool 00 re (A) 4A OS 0 f- 7-0 Ol Ol ol 20! 201 (yn) uy (vn) uy SAN]DA 109 Ol 01 May 0 ( 314