AO4420A 30V N-Channel MOSFET General Description Product Summary The AO4420A uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications. VDS (V) = 30V ID = 13.7A (VGS = 10V) RDS(ON) < 10.5m (VGS = 10V) RDS(ON) < 12m (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain AF Current VGS TA=25C TA=70C Avalanche Current B Power Dissipation B Junction and Storage Temperature Range Maximum Junction-to-Lead C 12 V ID 9.7 IDM 60 IAR 20 A 60 mJ EAR -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 2 TJ, TSTG t 10s Steady-State Steady-State A 3.1 PD TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 13.7 Pulsed Drain Current B Repetitive avalanche energy L=0.3mH TA=25C Maximum 30 RJA RJL Typ 28 54 21 C Max 40 75 30 Units C/W C/W C/W www.aosmd.com AO4420A Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= 12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250A 0.6 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 Static Drain-Source On-Resistance TJ=125C gFS Forward Transconductance VDS=5V, ID=13.7A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Units V 30 VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=13.7A 100 nA 2 V 8.3 10.5 12.5 15 9.7 12 m 1 V 5 A A m 37 0.76 S 4050 pF 256 pF 168 pF 0.86 1.1 30.5 36 nC 4.6 Qgd Gate Drain Charge 8.6 tD(on) Turn-On DelayTime 5.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=15V, RL=1.1, RGEN=3 A 1.1 3656 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs 1 5 VGS=4.5V, ID=12.7A Output Capacitance 0.004 TJ=55C VGS=10V, ID=13.7A Coss Max 30 VDS=24V, VGS=0V IDSS RDS(ON) Typ nC nC 9 ns ns 3.4 7 49.8 75 ns 5.9 11 ns IF=13.7A, dI/dt=100A/s 22.5 28 Body Diode Reverse Recovery Charge IF=13.7A, dI/dt=100A/s 12.5 16 ns nC Body Diode Reverse Recovery Time A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F.The current rating is based on the t 10s thermal resistance rating. Rev 1 : Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4420A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 30 10V VGS=5V 4.5V 50 25 VGS =2.5V 20 ID(A) ID(A) 40 30 125C 15 10 20 25C VGS =2.0V 5 10 0 0 0.0 0 1 2 3 4 0.5 5 1.0 1.5 2.0 2.5 3.0 VGS(Volts) Figure 2: Transfer Characteristics VDS(Volts) Figure 1: On-Regions Characteristics 1.8 Normalize ON-Resistance 12 11 RDS(ON)(m ) VGS =4.5V 10 9 8 VGS =10V 7 ID=13.7A 1.6 VGS=4.5V 1.4 VGS=10V 1.2 1.0 0.8 0 6 0 5 10 15 20 25 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 30 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1E+01 30 1E+00 ID=13.7A 25 125C IS(A) RDS(ON)(m ) 1E-01 125C 20 15 1E-02 1E-03 10 25C 25C 1E-04 5 1E-05 0 0 2 4 6 8 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 1.0 VSD(Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4420A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 10000 VDS=15V ID=13.7A Ciss Capacitance (pF) VGS(Volts) 4 3 2 1000 Coss 1 Crss 100 0 0 10 20 30 0 40 10 15 20 25 30 VDS(Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 50 100 10s RDS(ON) limited 40 100s ID(A) 0.1s 1s 1 1ms Power (W) 10ms 10 10s 20 DC 0.1 0.1 30 10 TJ(Max) =150C TA =25C 1 10 100 0 0.01 VDS(Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 Z JA Normalized Transient Thermal Resistance 5 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (S) Figure 11: Normalized Maximum Transient Thermal Impedence Alpha & Omega Semiconductor, Ltd. www.aosmd.com