NTTFS5116PL Power MOSFET -60 V, -20 A, 52 mW Features * Low RDS(on) * Fast Switching * These Devices are Pb-Free and are RoHS Compliant http://onsemi.com Applications V(BR)DSS * Load Switches * DC Motor Control * DC-DC Conversion Parameter Symbol Value Unit Drain-to-Source Voltage VDSS -60 V Gate-to-Source Voltage VGS 20 V ID -5.7 A Continuous Drain Current RqJA (Note 1) Continuous Drain Current RqJC (Note 1) TA = 25C TA = 100C TA = 25C Steady State PD 3.2 ID -20 TA = 100C TC = 25C tp = 10 ms L = 0.1 mH G (4) MARKING DIAGRAM W -76 A TJ, Tstg -55 to +175 C IS -20 A EAS 45 mJ IAS 30 A TL 260 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Symbol Value Unit Junction-to-Case - Steady State (Note 1) RqJC 3.8 C/W Junction-to-Ambient - Steady State (Note 1) RqJA 47 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces. November, 2011 - Rev. 1 WDFN8 (m8FL) CASE 511AB 5116 A Y WW G 1 5116 AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device THERMAL RESISTANCE MAXIMUM RATINGS (c) Semiconductor Components Industries, LLC, 2011 1 S S S G 1 IDM Lead Temperature for Soldering Purposes (1/8" from case for 10 s) Parameter S (1,2,3) A 20 Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy D (5-8) W 40 TC = 100C Operating Junction and Storage Temperature P-Channel MOSFET -14 PD -20 A 72 mW @ -4.5 V 1.6 TC = 25C TC = 100C Power Dissipation RqJC (Note 1) Pulsed Drain Current -4.0 ID MAX 52 mW @ -10 V -60 V MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Power Dissipation RqJA (Note 1) RDS(on) MAX Package Shipping NTTFS5116PLTAG WDFN8 1500/Tape & Reel (Pb-Free) NTTFS5116PLTWG WDFN8 5000/Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTTFS5116PL/D NTTFS5116PL ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 mA -60 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current 69.7 IDSS Gate-to-Source Leakage Current V VGS = 0 V, VDS = -60 V mV/C TJ = 25C -1.0 TJ = 125C -100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = -250 mA 100 mA nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance RDS(on) Forward Transconductance -1 -3 -6.2 gFS VGS = -10 V ID = -6 A 37 52 VGS = -4.5 V ID = -4.4 A 51 72 VDS = -15 V, ID = -6 A V mV/C mW 11 S 1258 pF CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge QG(TOT) VGS = 0 V, f = 1.0 MHz, VDS = -30 V 127 84 VGS = -10 V, VDS = -48 V, ID = -5 A 25 VGS = -4.5 V, VDS = -48 V, ID = -5 A 14 nC nC Threshold Gate Charge QG(TH) 1 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD Plateau Voltage VGP 3.1 V Gate Resistance RG 5.3 W td(on) 15 ns VGS = -4.5 V, VDS = -48 V, ID = -5 A 4 7 SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = -4.5 V, VDS = -48 V, ID = -5 A, RG = 6 W tf 58 30 37 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25C -0.79 TJ = 125C -0.64 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = -5 A 20 VGS = 0 V, dIS/dt = -100 A/ms, IS = -5 A QRR http://onsemi.com 2 V ns 15 5 19 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. -1.2 nC NTTFS5116PL TYPICAL CHARACTERISTICS 40 40 VDS 10 V VGS = 4.5 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 10 V 30 VGS = 4 V 20 VGS = 3.5 V 10 30 20 TJ = 25C 10 TJ = 125C VGS = 3 V 0 0 1 2 3 4 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 0 5 TJ = -55C 2 0.075 ID = -6 A TJ = 25C 0.065 0.055 0.045 0.035 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (V) 10 0.080 TJ = 25C 0.070 0.060 0.040 0.030 VGS = 10 V 5 10 15 20 25 30 ID, DRAIN CURRENT (A) 35 40 Figure 4. On-Resistance vs. Drain Current and Gate Voltage 10,000 2.0 ID = -4.4 A VGS = 4.5 V VGS = 0 V IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) VGS = 4.5 V 0.050 Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.8 6 Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 1. On-Region Characteristics 3 4 5 VGS, GATE-TO-SOURCE VOLTAGE (V) 1.6 1.4 1.2 1.0 TJ = 150C 1,000 TJ = 125C 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 100 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 60 NTTFS5116PL TYPICAL CHARACTERISTICS 10 VGS = 0 V TJ = 25C C, CAPACITANCE (pF) 1600 1400 Ciss 1200 1000 800 600 400 200 0 Coss Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V) 1800 QT 8 6 4 Qgs VDS = -48 V ID = -5 A TJ = 25C 2 0 0 60 5 10 15 20 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 40 100 -IS, SOURCE CURRENT (A) t, TIME (ns) VDD = -48 V ID = -5 A VGS = -4.5 V tf tr td(off) 10 td(on) 1 1 10 RG, GATE RESISTANCE (W) 100 VGS = 0 V TJ = 25C 30 20 10 0 0.5 Figure 9. Resistive Switching Time Variation vs. Gate Resistance EAS, SINGLE PULSE DRAIN-TO- SOURCE AVALANCHE ENERGY (mJ) 1 ms VGS = -10 V Single Pulse TC = 25C 100 ms 10 ms 10 ms 10 dc 1 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 0.6 0.7 0.8 0.9 1.0 -VSD, SOURCE-TO-DRAIN VOLTAGE (V) 1.1 Figure 10. Diode Forward Voltage vs. Current 100 -ID, DRAIN CURRENT (A) 25 Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 1000 0.1 Qgd 100 45 30 15 0 25 50 75 100 125 150 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 175 NTTFS5116PL TYPICAL CHARACTERISTICS 100 D = 0.5 D = 0.2 D = 0.1 D = 0.05 RqJA (t) 10 1 D = 0.02 D = 0.01 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 13. Thermal Response http://onsemi.com 5 1 10 100 1000 NTTFS5116PL PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X 0.20 C 8 7 6 5 4X E1 E q c 1 2 3 4 A1 TOP VIEW 0.10 C A C 6X e 0.10 C SIDE VIEW DETAIL A SEATING PLANE DETAIL A q 8X 0.10 C A B 0.05 L 8X e/2 0.42 14 0.116 0.078 0.116 0.058 0.009 0.012 0.025 0.012 0.002 0.055 0 INCHES NOM 0.030 *** 0.012 0.008 0.130 BSC 0.120 0.083 0.130 BSC 0.120 0.063 0.012 0.026 BSC 0.016 *** 0.017 0.005 0.059 *** MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 *** 0.022 0.008 0.063 12 4X 0.66 M E3 8 G MIN 0.028 0.000 0.009 0.006 0.65 PITCH PACKAGE OUTLINE K E2 MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 *** 0.05 0.40 0.23 0.30 0.25 0.15 0.20 3.30 BSC 3.15 2.95 3.05 1.98 2.24 2.11 3.30 BSC 2.95 3.15 3.05 1.73 1.47 1.60 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.64 *** *** 0.30 0.43 0.56 0.06 0.13 0.20 1.60 1.40 1.50 0 *** 12 SOLDERING FOOTPRINT* C 4X DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M 5 D2 BOTTOM VIEW 3.60 L1 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS *For additional information on our Pb *Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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