© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 1
1Publication Order Number:
NTTFS5116PL/D
NTTFS5116PL
Power MOSFET
−60 V, −20 A, 52 mW
Features
•Low RDS(on)
•Fast Switching
•These Devices are Pb−Free and are RoHS Compliant
Applications
•Load Switches
•DC Motor Control
•DC−DC Conversion
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS −60 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current RqJA (Note 1)
Steady
State
TA = 25°CID−5.7 A
TA = 100°C−4.0
Power Dissipation RqJA
(Note 1)
TA = 25°CPD3.2 W
TA = 100°C 1.6
Continuous Drain
Current RqJC (Note 1)
TC = 25°CID−20 A
TC = 100°C−14
Power Dissipation
RqJC (Note 1)
TC = 25°CPD40 W
TC = 100°C 20
Pulsed Drain Current tp = 10 msIDM −76 A
Operating Junction and Storage Temperature TJ,
Tstg
−55 to
+175
°C
Source Current (Body Diode) IS−20 A
Single Pulse Drain−to−Source Ava-
lanche Energy
L = 0.1 mH EAS 45 mJ
IAS 30 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case – Steady
State (Note 1)
RqJC 3.8 °C/W
Junction−to−Ambient – Steady
State (Note 1)
RqJA 47
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces.
ORDERING INFORMATION
http://onsemi.com
Device Package Shipping†
V(BR)DSS RDS(on) MAX ID MAX
−60 V
52 mW @ −10 V
−20 A
P−Channel MOSFET
D (5−8)
S (1,2,3)
G (4)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
72 mW @ −4.5 V
NTTFS5116PLTAG WDFN8
(Pb−Free)
1500/Tape & Reel
(Note: Microdot may be in either location)
1
5116 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
1
NTTFS5116PLTWG WDFN8
(Pb−Free)
5000/Tape & Reel
5116
AYWWG
G
D
D
D
D
S
S
S
G
NTTFS5116PL
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA−60 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ69.7 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = −60 V
TJ = 25°C−1.0 mA
TJ = 125°C−100
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA−1−3 V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ−6.2 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = −10 V ID = −6 A 37 52 mW
VGS = −4.5 V ID = −4.4 A 51 72
Forward Transconductance gFS VDS = −15 V, ID = −6 A 11 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance Ciss
VGS = 0 V, f = 1.0 MHz, VDS = −30 V
1258 pF
Output Capacitance Coss 127
Reverse Transfer Capacitance Crss 84
Total Gate Charge QG(TOT) VGS = −10 V, VDS = −48 V, ID = −5 A 25 nC
VGS = −4.5 V, VDS = −48 V, ID = −5 A 14
Threshold Gate Charge QG(TH)
VGS = −4.5 V, VDS = −48 V, ID = −5 A
1nC
Gate−to−Source Charge QGS 4
Gate−to−Drain Charge QGD 7
Plateau Voltage VGP 3.1 V
Gate Resistance RG5.3 W
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time td(on)
VGS = −4.5 V, VDS = −48 V,
ID = −5 A, RG = 6 W
15 ns
Rise Time tr58
Turn−Off Delay Time td(off) 30
Fall Time tf37
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = −5 A
TJ = 25°C−0.79 −1.2 V
TJ = 125°C−0.64
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = −100 A/ms,
IS = −5 A
20 ns
Charge Time ta15
Discharge Time tb5
Reverse Recovery Charge QRR 19 nC
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTTFS5116PL
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3
TYPICAL CHARACTERISTICS
0
10
20
30
40
012345
Figure 1. On−Region Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
VGS = 10 V VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
VGS = 3 V
0
10
20
30
40
23456
Figure 2. Transfer Characteristics
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
VDS ≥ 10 V
TJ = 25°C
TJ = 125°C
TJ = −55°C
0.035
0.045
0.055
0.065
0.075
246810
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID = −6 A
TJ = 25°C
0.030
0.040
0.050
0.060
0.070
0.080
5 10152025303540
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VGS = 4.5 V
TJ = 25°C
VGS = 10 V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
−50 −25 0 25 50 75 100 125 150 175
Figure 5. On−Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
RDS(on), DRAIN−TO−SOURCE RES-
ISTANCE (NORMALIZED)
ID = −4.4 A
VGS = 4.5 V
100
1,000
10,000
10 20 30 40 50 60
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
IDSS, LEAKAGE (nA)
VGS = 0 V
TJ = 150°C
TJ = 125°C
NTTFS5116PL
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4
TYPICAL CHARACTERISTICS
0
200
400
600
800
1000
1200
1400
1600
0 102030405060
Figure 7. Capacitance Variation
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
VGS = 0 V
TJ = 25°C
Ciss
Coss
1800
Crss 0
2
4
6
8
10
0 5 10 15 20 25
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Qg, TOTAL GATE CHARGE (nC)
VGS, GATE−TO−SOURCE VOLTAGE
(V)
VDS = −48 V
ID = −5 A
TJ = 25°C
Qgs Qgd
QT
1
10
100
1000
1 10 100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
RG, GATE RESISTANCE (W)
t, TIME (ns)
td(off)
td(on)
tr
tf
VDD = −48 V
ID = −5 A
VGS = −4.5 V
0
10
20
30
40
0.5 0.6 0.7 0.8 0.9 1.0 1.1
Figure 10. Diode Forward Voltage vs. Current
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
−IS, SOURCE CURRENT (A)
TJ = 25°C
VGS = 0 V
0.1
1
10
100
0.1 1 10 100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−ID, DRAIN CURRENT (A)
VGS = −10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
100 ms
10 ms
1 ms
dc
10 ms
0
15
30
45
25 50 75 100 125 150 175
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
TJ, STARTING JUNCTION TEMPERATURE (°C)
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
NTTFS5116PL
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5
TYPICAL CHARACTERISTICS
0.01
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 13. Thermal Response
PULSE TIME (sec)
RqJA (t)
D = 0.5
Single Pulse
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
NTTFS5116PL
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6
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE C
M
0***
1.60
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
1
56
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1
D
E
B
A
0.20
0.20
2X
2X
DIM MIN NOM
MILLIMETERS
A0.70 0.75
A1 0.00
D1
E1
1.47 1.60
e
0.64
0.06 0.13
A
0.10
0.10
DETAIL A
14
8L1
e/2
8X
D2
G
E2
K
0.10 B
C
L
DETAIL A
A1
e
6X
c
4X
C
SEATING
PLANE
5
MAX
0.80
0.05
0.40
0.25
3.15
2.24
3.15
1.73
0.51
0.20
M
*For additional information on our Pb *Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting T
echniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.650.42
0.75 2.30
3.46
PACKAGE
8X
0.055 0.059
0***
0.063
12
0.028 0.030
0.000
0.006 0.008
0.025
0.002 0.005
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.020
0.008
MIN NOM
INCHES
MAX
7
8
PITCH
3.60
0.57
0.47
OUTLINE
DIMENSION: MILLIMETERS
3.30 BSC
3.30 BSC
0.130 BSC
0.130 BSC
2.37
0.66
4X
E3 0.23 0.30 0.40 0.009 0.012 0.016
E3
4X
234
qb
c
D
D2
E
E2
G
K
L
L1
q°°°°
0.30
1.40 1.50
*** *** *** ***
0.43 0.56 0.012 0.017 0.022
0.0160.012
0.410.30
0.65 BSC 0.026 BSC
0.058 0.063
0.116 0.120
3.05
2.95
1.98
2.95 3.05
2.11 0.078
0.116 0.120
0.083
*** ***
0.0120.009
C
C
0.23
0.15
0.30
0.20
CA
0.05
C
C
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Phone: 81−3−5817−1050
NTTFS5116PL/D
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