DEVICE DESCRIPTION
The ZSR Series three terminal fixed positive voltage
regulators feature internal circuit current limit and
thermal shutdown making the devices difficult to
destroy. The circuit design allows creation of any
custom voltage in the range 2.85 to 12 volts. The
devices are available in a small outline surface mount
package, ideal for applications where space saving is
important, as well as through hole TO92 style
packaging. The devices are suited to local voltage
regulation applications, where problems could be
encountered with distributed single source regulation,
as well as more general voltage regulation
applications.
The ZSR Series show performance characteristics
superior to other local voltage regulators. The initial
output voltage is maintained to within 2.5% with a
quiescent current of typically 350µA. Output voltage
change, with input voltage and load current, is much
lower than competitive devices. The ZSR devices are
completely stable with no external components.
FEATURES
•2.85 to 12 Volt
•Output current up to 200mA
•Tight initial tolerance of 2.5%
•Low 600␮a quiescent current
•-55 to 125°C temperature range
•No external components
•Internal thermal shutdown
•Internal short circuit current limit
•Small outline SOT223 package
•TO92 package
VOLTAGE RANGE
ZSR285 2.85V
ZSR300 3.0V
ZSR330 3.3V
ZSR400 4.0V
ZSR485 4.85V
ZSR500 5.0V
ZSR520 5.2V
ZSR600 6.0V
ZSR800 8.0V
ZSR900 9.0V
ZSR1000 10.0V
ZSR1200 12.0V
Issue 8 - April 2006
2.85 TO 12 VOLT FIXED POSITIVE LOCAL VOLTAGE REGULATOR
ZSR SERIES
SEMICONDUCTORS
1
ABSOLUTE MAXIMUM RATING
Input voltage 20V
Output Current(Io) 200mA
Operating Temperature -55 to 125°C
Storage Temperature -65 to 150°C
ELECTRICAL CHARACTERISTICS
Notes:
1. The maximum operating input voltage and output
current of the device will be governed by the
maximum power dissipation of the selected package.
Maximum package power dissipation is specified at
25 °C and must be linearly derated to zero at
Tamb=125°C.
2. The following data represents pulse test conditions
with junction temperatures as indicated at the
initiation of the test. Continuous operation of the
devices with the stated conditions might exceed the
power dissipation limits of the chosen package.
Power Dissipation (Tamb=25°C)
SOT223 2W(Note 3)
TO92 600mW
3. Maximum power dissipation for the SOT223 and
SO8 packages, is calculated assuming that the device
is mounted on a PCB measuring 2 inches square.
4. The shut down feature of the device operates if its
temperature exceeds its design limit as might occur
during external faults, short circuits etc. If the
regulator is supplied from an inductive source then a
large voltage transient, on the regulator input, can
result should the shut down circuit operate. It is
advised that a capacitor (1µF or greater) should be
applied across the regulator input to ensure that the
maximum voltage rating of the device is not
exceeded under shutdown conditions.
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ZSR SERIES
SEMICONDUCTORS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITS
VOOutput Voltage 2.78 2.85 2.92 V
IO=1 to 200mA τ2.736 2.964 V
Vin=4.85 to 20V
IO=1 to 100mA τ
2.736 2.964 V
∆VOLine Regulation Vin=4.85 to 20V 10 40 mV
∆VOLoad Regulation IO=1 to 200mA
IO=1 to 100mA
5
2
25 mV
mV
lqQuiescent Current τ350 600 µA
∆lqQuiescent Current
Change
IO=1 to 200mA
Vin=4.85 to 20V
100
100
µA
µA
VnOutput Noise Voltage f=10Hz to 10kHz 75 µVrms
∆Vin /∆VORipple Rejection Vin=5.85 to 18V
f=120Hz 48 62 dB
Vin Input Voltage Required
To Maintain Regulation 4.85 4.55 V
∆VO/∆TAverage Temperature
Coefficient of VO
IO=5.0mA τ
0.1 mV/°C
ZSR285 TEST CONDITIONS (Unless otherwise stated):Tj=25°C, IO=100mA, Vin=6.85V
␶=Tj=-55 to 125°C
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ZSR SERIES
SEMICONDUCTORS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITS
VOOutput Voltage 3.218 3.3 3.382 V
IO=1 to 200mA τ3.168 3.432 V
Vin=5.3 to 20V
IO=1 to 100mA τ
3.168 3.432 V
∆VOLine Regulation Vin=5.3 to 20V 7.5 30 mV
∆VOLoad Regulation IO=1 to 200mA
IO=1 to 100mA
5
2
25 mV
mV
lqQuiescent Current τ350 600 µA
∆lqQuiescent Current Change IO=1 to 200mA
Vin=5.3 to 20V
100
100
µA
µA
VnOutput Noise Voltage f=10Hz to 10kHz 50 µVrms
∆Vin /∆VORipple Rejection Vin=6.3 to 18V
f=120Hz 50 64 dB
Vin Input Voltage Required To
Maintain Regulation 5.3 5 V
∆VO/∆TAverage Temperature
CoefficientofV
O
IO=5.0mA τ
0.1 mV/°C
ZSR330 TEST CONDITIONS (Unless otherwise stated):Tj=25°C, IO=100mA, Vin=7.3V
␶=Tj=-55 to 125°C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITS
VOOutput Voltage 2.92 3.0 3.08 V
IO=1 to 200mA τ2.88 3.12 V
Vin=5 to 20V
IO=1 to 100mA τ
2.88 3.12 V
∆VOLine Regulation Vin=5to20V 1040mV
∆VOLoad Regulation IO=1 to 200mA
IO=1 to 100mA
5
2
25 mV
mV
lqQuiescent Current τ350 600 µA
∆lqQuiescent Current Change IO=1 to 200mA
Vin=5 to 20V
100
100
µA
µA
VnOutput Noise Voltage f=10Hz to 10kHz 75 µVrms
∆Vin /∆VORipple Rejection Vin=6 to 18V
f=120Hz 48 62 dB
Vin Input Voltage Required To
Maintain Regulation 5 4.7 V
∆VO/∆TAverage Temperature
CoefficientofV
O
IO=5.0mA τ
0.1 mV/°C
ZSR300 TEST CONDITIONS (Unless otherwise stated):Tj=25°C, IO=100mA, Vin=7V
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ZSR SERIES
SEMICONDUCTORS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITS
VOOutput Voltage 3.9 4.0 4.1 V
IO=1 to 200mA τ3.84 4.16 V
Vin=6 to 20V
IO=1 to 100mA τ
3.84 4.16 V
∆VOLine Regulation Vin=6to20V 1040mV
∆VOLoad Regulation IO=1 to 200mA
IO=1 to 100mA
5
2
25 mV
mV
lqQuiescent Current τ350 600 µA
∆lqQuiescent Current
Change
IO=1 to 200mA
Vin=6 to 20V
100
100
µA
µA
VnOutput Noise Voltage f=10Hz to 10kHz 75 µVrms
∆Vin /∆VORipple Rejection Vin=7 to 18V
f=120Hz
48 62 dB
Vin Input Voltage Required
To Maintain Regulation
65.3 V
ZSR400 TEST CONDITIONS (Unless otherwise stated):Tj=25°C, IO=100mA, Vin=8V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITS
VOOutput Voltage 4.729 4.85 4.971 V
IO=1 to 200mA τ4.656 5.044 V
Vin=6.8 to 20V
IO=1 to 100mA τ
4.656 5.044 V
∆VOLine Regulation Vin=6.85 to 20V 10 40 mV
∆VOLoad Regulation IO=1 to 200mA
IO=1 to 100mA
5
2
25 mV
mV
lqQuiescent Current τ350 600 µA
∆lqQuiescent Current
Change
IO=1 to 200mA
Vin=6.85 to 20V
100
100
µA
µA
VnOutput Noise Voltage f=10Hz to 10kHz 50 µVrms
∆Vin /∆VORipple Rejection Vin=7.85 to 18V
f=120Hz
50 64 dB
Vin Input Voltage Required
To Maintain Regulation
6.85 6.55 V
∆VO/∆TAverage Temperature
CoefficientofV
O
IO=5.0mA τ0.1 mV/°C
␶=Tj= -55 to 125°C
ZSR485 TEST CONDITIONS (Unless otherwise stated): Tj=25°C, IO=100mA, Vin=8.85V
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ZSR SERIES
SEMICONDUCTORS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITS
VOOutput Voltage 11.7 12 12.3 V
IO=1 to 200mA τ11.52 12.48 V
Vin=14 to 20V
IO=1 to 100mA τ
11.52 12.48 V
∆VOLine Regulation Vin=14 to 20V 12 40 mV
∆VOLoad Regulation IO=1 to 200mA
IO=1 to 100mA
9
3
30 mV
mV
lqQuiescent Current τ350 600 µA
∆lqQuiescent Current Change IO=1 to 200mA
Vin=14 to 20V
100
100
µA
µA
VnOutput Noise Voltage f=10Hz to 10kHz 150 µVrms
∆Vin /∆VORipple Rejection Vin=15 to 18V
f=120Hz 43 57 dB
Vin Input Voltage Required To
Maintain Regulation 14 13.7 V
∆VO/∆TAverage Temperature
Coefficient of VO
IO=5.0mA τ0.25
mV/°C
ZSR1200 TEST CONDITIONS (Unless otherwise stated): Tj=25°C, IO=100mA, Vin=16V
τ=Tj= -55 to 125 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITS
VOOutput Voltage 9.75 10 10.25 V
IO=1 to 200mA τ9.6 10.4 V
Vin=12 to 20V
IO=1 to 100mA τ
9.6 10.4 V
∆VOLine Regulation Vin=12 to 20V 12 40 mV
∆VOLoad Regulation IO=1 to 200mA
IO=1 to 100mA
9
3
30 mV
mV
lqQuiescent Current τ350 600 µA
∆lqQuiescent Current Change IO=1 to 200mA
Vin=12 to 20V
100
100
µA
µA
VnOutput Noise Voltage f=10Hz to 10kHz 150 µVrms
∆Vin /∆VORipple Rejection Vin=13 to 18V
f=120Hz 43 57 dB
Vin Input Voltage Required To
Maintain Regulation 12 11.7 V
∆VO/∆TAverage Temperature
Coefficient of VO
IO=5.0mA τ0.25
mV/°C
ZSR1000 TEST CONDITIONS (Unless otherwise stated): Tj=25°C, IO=100mA, Vin=14V
ZSR285 ZSR300 ZSR400
ZSR900
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ZSR SERIES
SEMICONDUCTORS
TYPICAL CHARACTERISTICS
ZSR285 ZSR300 ZSR400
ZSR900
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7
ZSR SERIES
SEMICONDUCTORS
-50 -25 025 50 75 100 125
Temp e rat u re (°C)
Short-Circuit Output Current (mA)
Peak Output Current v Temperature
500
400
300
200
100
0
-50 -25 025 50 75 100 125
Tem p e rat ure ( °C)
Io=100mA
Io=200mA
2.5
2.0
1.5
1.0
0.5
0
Drop-Out Voltage (V)
Drop-Out Voltage v Temperature
-50 -25 025 50 75 100 125
Temperature (°C)
450
400
350
300
250
Quiescent Current (mA)
Quiescent Current v Temperature
I
o
=0
V
in
=V
o
+4V
-50 -25 025 50 75 100 125
Tem p era t ure ( °C)
Output Voltage Temperature Coefficient
9.08
9.04
9.00
8.96
8.92
V
in
=V
o
+4V
I
o
=5mA
-50 -25 025 50 75 100 125
2.85
2.82
Tem p era t ure ( °C)
Output Voltage Temperature Coefficient
2.84
2.86
5.70
5.66
-50 -25 025 50 75 100 125
Temperature (°C)
Output Voltage (V)
Output Voltage Temperature Coefficient
4.00
3.96
ZSR400
3.98
3.94
5.68
5.72
ZSR900
2.99
3.00
3.01
2.98
ZSR285
ZSR300
I
o
=5mA
V
in
=V
o
+4V
I
o
=5mA
V
in
=V
o
+4V
V
o=
0
V
in
=10V
Output Voltage (V)
Output Voltage (V)
TYPICAL CHARACTERISTICS
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8
ZSR SERIES
SEMICONDUCTORS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITS
VOOutput Voltage 5.85 6 6.15 V
IO=1 to 200mA τ5.76 6.24 V
Vin=8 to 20V
IO=1 to 100mA τ
5.76 6.24 V
∆VOLine Regulation Vin=8to20V 1040mV
∆VOLoad Regulation IO=1 to 200mA
IO=1 to 100mA
7
2.5
30 mV
mV
lqQuiescent Current τ350 600 µA
∆lqQuiescent Current Change IO=1 to 200mA
Vin=8 to 20V
100
100
µA
µA
VnOutput Noise Voltage f=10Hz to 10kHz 90 µVrms
∆Vin /∆VORipple Rejection Vin=9 to 18V
f=120Hz 48 62 dB
Vin Input Voltage Required To
Maintain Regulation 8 7.7 V
∆VO/∆TAverage Temperature
CoefficientofV
O
IO=5.0mA τ
0.15 mV/°C
ZSR600 TEST CONDITIONS (Unless otherwise stated): Tj=25°C, IO=100mA, Vin=10V
τ=Tj= -55 to 125 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITS
VOOutput Voltage 4.875 5 5.125 V
IO=1 to 200mA τ4.8 5.2 V
Vin=7 to 20V
IO=1 to 100mA τ
4.8 5.2 V
∆VOLine Regulation Vin=7to20V 1040mV
∆VOLoad Regulation IO=1 to 200mA
IO=1 to 100mA
5
2
25 mV
mV
lqQuiescent Current τ350 600 µA
∆lqQuiescent Current Change IO=1 to 200mA
Vin=7 to 20V
100
100
µA
µA
VnOutput Noise Voltage f=10Hz to 10kHz 75 µVrms
∆Vin /∆VORipple Rejection Vin=8 to 18V
f=120Hz 48 62 dB
Vin Input Voltage Required To
Maintain Regulation 7 6.7 V
∆VO/∆TAverage Temperature
Coefficient of VO
IO=5.0mA τ
0.1 mV/°C
ZSR500 TEST CONDITIONS (Unless otherwise stated): Tj=25°C, IO=100mA, Vin=9V
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9
ZSR SERIES
SEMICONDUCTORS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITS
VOOutput Voltage 5.070 5.2 5.330 V
IO=1 to 200mA τ4.99 5.41 V
Vin=7.2 to 20V
IO=1 to 100mA τ
4.99 5.41 V
∆VOLine Regulation Vin=7.2to20V 1040mV
∆VOLoad Regulation IO=1 to 200mA
IO=1 to 100mA
5
2
25 mV
mV
lqQuiescent Current τ350 600 µA
∆lqQuiescent Current Change IO=1 to 200mA
Vin=7.2 to 20V
100
100
µA
µA
VnOutput Noise Voltage f=10Hz to 10kHz 75 µVrms
∆Vin /∆VORipple Rejection Vin=8.2 to 18V
f=120Hz 48 62 dB
Vin Input Voltage Required To
Maintain Regulation 7.2 6.9 V
∆VO/∆TAverage Temperature
CoefficientofV
O
IO=5.0mA τ
0.1 mV/°C
ZSR520 TEST CONDITIONS (Unless otherwise stated): Tj=25°C, IO=100mA,
␶=Tj= -55 to 125 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITS
VOOutput Voltage 8.775 9.0 9.225 V
IO=1 to 200mA τ8.64 9.36 V
Vin=11 to 20V
IO=1 to 100mA τ
8.64 9.36 V
∆VOLine Regulation Vin=11 to 20V 12 40 mV
∆VOLoad Regulation IO=1 to 200mA
IO=1 to 100mA
9
3
30 mV
mV
lqQuiescent Current τ350 600 µA
∆lqQuiescent Current Change IO=1 to 200mA
Vin=11 to 20V
100
100
µA
µA
VnOutput Noise Voltage f=10Hz to 10kHz 150 µVrms
∆Vin /∆VORipple Rejection Vin=12 to 18V
f=120Hz 43 57 dB
Vin Input Voltage Required To
Maintain Regulation 11 10.7 V
∆VO/∆TAverage Temperature
Coefficient of VO
IO=5.0mA τ0.25
mV/°C
ZSR900 TEST CONDITIONS (Unless otherwise stated): Tj=25°C, IO=100mA, Vin=13V
␶=Tj= -55 to 125°C
ZSR330 ZSR500 ZSR600
ZSR800 ZSR1000
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10
ZSR SERIES
SEMICONDUCTORS
TYPICAL CHARACTERISTICS
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ZSR330 ZSR500 ZSR600
ZSR800 ZSR1000
11
ZSR SERIES
SEMICONDUCTORS
4-38
TYPICAL CHARACTERISTICS
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12
ZSR SERIES
SEMICONDUCTORS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITS
VOOutput Voltage 7.8 8 8.2 V
IO=1 to 200mA τ7.68 8.32 V
Vin=10 to 20V
IO=1 to 100mA τ
7.68 8.32 V
∆VOLine Regulation Vin=10 to 20V 11 40 mV
∆VOLoad Regulation IO=1 to 200mA
IO=1 to 100mA
8
3
30 mV
mV
lqQuiescent Current τ350 600 µA
∆lqQuiescent Current Change IO=1 to 200mA
Vin=10 to 20V
100
100
µA
µA
VnOutput Noise Voltage f=10Hz to 10kHz 115 µVrms
∆Vin /∆VORipple Rejection Vin=11 to 18V
f=120Hz 44 60 dB
Vin Input Voltage Required To
Maintain Regulation 10 9.7 V
∆VO/∆TAverage Temperature
CoefficientofV
O
IO=5.0mA τ0.25
mV/°C
ZSR800 TEST CONDITIONS (Unless otherwise stated): Tj=25°C, IO=100mA, Vin=12V
␶=Tj= -55 to 125°C
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13
ZSR485 ZSR520
ZSR1200 ZSR SERIES
SEMICONDUCTORS
4-38
TYPICAL CHARACTERISTICS
CONNECTION DIAGRAMS
SOT223 is supplied on tape in 7” reels of 1000, suffix
TA or 13” reels of 4000, suffix TC. Order code e.g.
ZSR300GTA.
TO92 is supplied loose in boxes of 4000, no suffix, or
taped and wound on a reel of 1500, suffix STOB, or
taped and folded in concertina form of 1500, suffix
STZ.
Issue 8 - April 2006
ZSR SERIES
SEMICONDUCTORS
14
IN
GND
OUT
TO92 Package Suffix – C
Bottom View
SOT223 Package Suffix – G
Top View –
Connect pin 4 to pin 2 or leave pin 4
electrically isolated
Part No Package Partmark
ZSR ▲C TO92 ZSR ▲
ZSR ▲G SOT223 ZSR ▲
▲Voltage Option
eg 3V device in TO92 package
part number ZSR300C
part marked ZSR300 *
eg 12V device in SOT223 package
part number ZSR1200G
part marked ZSR1200 *
ORDERING INFORMATION
Voltage Voltage
Option
TO92 SOT223
2.85V 285 33
3.0V 300 33
3.3V 330 33
4.0V 400 33
4.85V 485 33
5.0V 500 33
5.2V 520 33
6.0V 600 33
8.0V 800 33
9.0V 900 33
10.0V 1000 33
12.0V 1200 33
OPTIONS
*NOTE: Exception. ZSR1000 part mark
is ZSR100 for all package options
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15
ZSR SERIES
SEMICONDUCTORS
SCHEMATIC DIAGRAM
APPLICATIONS
Issue 8 - April 2006
16
ZSR485 ZSR520
ZSR1200
ZSR SERIES
SEMICONDUCTORS
4-
TYPICAL CHARACTERISTICS
Issue 8 - April 2006
17
ZSR SERIES
SEMICONDUCTORS
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services
concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or
service.
For the latest product information, log on to www.zetex.com
© Zetex Semiconductors plc 2006
TYPICAL CHARACTERISTICS