SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9199
Issue 1
Page 1 of 3
2N6678M3A
• High Voltage, Fast Switching.
• Hermetic TO-254AA Isolated Metal Package.
• Ideally suited for PWM Regulators, Power Supplies
and Converter Circuits
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO Collector – Base Voltage 650V
VCEX Collector – Emitter Voltage VBE = -1.5V 650V
VCEO Collector – Emitter Voltage 400V
VEBO Emitter – Base Voltage 8V
IC Continuous Collector Current 15A
IB Base Current 5A
PD Total Power Dissipation at TA = 25°C 6W
Derate Above 25°C 34.3mW/°C
PD Total Power Dissipation at TC = 25°C 175W
Derate Above 25°C 1.0W/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Max. Units
RθJA Thermal Resistance, Junction To Ambient 29.16 °C/W
RθJC
Thermal Resistance, Junction To Case 1.0 °C/W
SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
2N6678M3A
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9199
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage IC = 20mA 400 V
VCE = 400V VBE = -1.5V 500 nA
VCE = 650V VBE = -1.5V 1.0
ICEX Collector Cut-Off Current
TA = 125°C 50 µA
ICBO Collector Cut-Off Current VCB = 650V IE = 0 1.0
IEBO Emitter Cut-Off Current VEB = 8V IC = 0 2 mA
IC = 15A IB = 3A 1.0
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage TA = 125°C 2
VBE(sat)
(1)
Base-Emitter Saturation
Voltage IC = 15A IB = 3A 1.5
V
IC = 1.0A VCE = 3V 15 40
IC = 15A VCE = 3V 8 20
hFE
(1)
Forward-current transfer
ratio
` TA = -55°C 4
DYNAMIC CHARACTERISTICS
IC = 1.0A VCE = 10V
| hfe | Small signal forward-current
transfer ratio f = 5MHz
3 10
VCB = 10V IE = 0
Cobo Output Capacitance f = 1.0MHz 150 500 pF
td Delay Time IC = 15A VCC = 200V 0.1
tr Rise Time IB1 = 3A 0.6
ts Storage Time IC = 15A VCC = 200V 2.5
tf Fall Time IB1 = -IB2 = 3A 0.5
µs
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
2N6678M3A
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9199
Issue 1
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
TO
-
2
54
A
A
Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter
123
13.59 (0.535)
13.84 (0.545)
3.53 (0.139)
3.78 (0.149) Dia.
6.32 (0.249)
6.60 (0.260) 1.02 (0.040)
1.27 (0.050)
30.35 (1.195)
31.40 (1.235)
16.89 (0.665)
17.40 (0.685)
13.59 (0.535)
13.84 (0.545)
20.07 (0.790)
20.32 (0.800)
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045) 3.81 (0.150)
BSC
