Feb.1999
MITSUBISHI THYRISTOR MODULES
TM200DZ/CZ/PZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
DC motor control, NC equipment, AC motor control, Contactless switches,
Electric furnace temperature control, Light dimmers
TM200DZ/CZ/PZ-M,-H,-24,-2H
•IT (AV) Average on-state current .......... 200A
•VRRM Repetitive peak reverse voltage
........ 400/800/1200/1600V
•VDRM Repetitive peak off-state voltage
........ 400/800/1200/1600V
•DOUBLE ARMS
•Insulated Type
•UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
(DZ Type)
(DZ Type) (Bold line is connective bar.)
3–φ6.5
4–M8
A1K1A2K2
K2
G2
K1
G1
18 16 18 16
32 30
68.5
30
68.5
150
Tab#110,
t=0.5
40
39
32
23
7
A1
CR1K1
K2CR2
A2
K2
G2
K1
G1
(DZ)
(CZ)
(PZ)
A1
CR1
K1K2CR2
A2
K2
G2
K1
G1
A1
CR1
K1K2
CR2
A2
K2
G2
K1
G1
206
9
LABEL
not Recommend
for New Design
Feb.1999
24
1200
1350
960
1200
1350
960
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
V
V
V
MITSUBISHI THYRISTOR MODULES
TM200DZ/CZ/PZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
M
400
480
320
400
480
320
Symbol
VRRM
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Unit
A
A
A
A2s
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Conditions
Single-phase, half-wave 180° conduction, TC=64°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
VD=1/2VDRM, IG=1.0A, Tj=125°C
Charged part to case
Main terminal screw M8
Mounting screw M6
Typical value
Ratings
310
200
4000
6.7 × 104
100
10
3.0
10
5.0
4.0
–40~+125
–40~+125
2500
8.83~10.8
90~110
1.96~3.92
20~40
300
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
di/dt
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Viso
—
—
Parameter
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I2t for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Voltage class
ELECTRICAL CHARACTERISTICS
Unit
mA
mA
V
V/µs
V
V
mA
°C/W
°C/W
MΩ
Limits
Symbol
IRRM
IDRM
VTM
dv/dt
VGT
VGD
IGT
Rth (j-c)
Rth (c-f)
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
Min.
—
—
—
500
—
0.25
15
—
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
30
30
1.35
—
3.0
—
100
0.2
0.1
—
H
800
960
640
800
960
640
2H
1600
1700
1280
1600
1700
1280
Test conditions
Tj=125°C, VRRM applied
Tj=125°C, VDRM applied
Tj=125°C, ITM=600A, instantaneous meas.
Tj=125°C, VD=2/3VDRM
Tj=25°C, VD=6V, RL=2Ω
Tj=125°C, VD=1/2VDRM
Tj=25°C, VD=6V, RL=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
not Recommend
for New Design
Feb.1999
–1
10
–2
10
–3
10
0
10
0
10
1
10
4
10
3
10
2
10
1
10
–1
10
0
10
1
10
–1
10
2
10
1
10
0
10
705030207532
0
500
4000
101 100
1000
1500
2000
2500
3000
3500
753275327532
3
2
7
5
3
2
7
5
3
2
4
7
5
4
V
GT
=3.0V
I
GT
=
100mA
I
FGM
=4.0A
P
GM
=10W
V
FGM
=10V
V
GD
=0.25V
P
G(AV)
=
3.0W
T
j
=25°C
0.5
7
5
3
2
7
5
3
2
7
5
3
2
1.0 2.0 2.51.5
T
j
=125°C
753275327532
0.25
0
7532
0.05
0.10
0.15
0.20
32
00 200
320
40
80
120
160
200
240
280
40 80 120 160
θ=30°
120°
90°
180°
θ
360°
60°
130
50 0 120 20040
60
70
80
90
100
110
120
80 160
θ=30° 60° 90°
θ
360°
180°120°
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
ON-STATE CURRENT (A)
SURGE (NON-REPETITIVE)
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V) CONDUCTION TIME
(CYCLES AT 60Hz)
GATE VOLTAGE (V)
AVERAGE ON-STATE POWER
DISSIPATION (W)
TRANSIENT THERMAL IMPEDANCE
(°C/W)
CASE TEMPERATURE (°C)
TIME (s)GATE CURRENT (mA)
AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A)
MITSUBISHI THYRISTOR MODULES
TM200DZ/CZ/PZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
not Recommend
for New Design
Feb.1999
00 32040
400
16080 120
50
100
150
200
250
300
350
200 240 280
θ=30°
60°
90°
θ
360°
270°
DC
120°
180°
30 0 32040
130
40
280120 200
80 160 240
50
60
70
80
90
100
110
120
180° DCθ=30°
θ
360°
60° 90°
120°
270°
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(RECTANGULAR WAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(RECTANGULAR WAVE)
AVERAGE ON-STATE POWER
DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)AVERAGE ON-STATE CURRENT (A)
CASE TEMPERATURE (°C)
MITSUBISHI THYRISTOR MODULES
TM200DZ/CZ/PZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
not Recommend
for New Design
